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Yida Li

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cond-mat.mes-hall cond-mat.mtrl-sci eess.SP

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preprint2022arXiv

Realizing Ultra-Fast and Energy-Efficient Baseband Processing Using Analogue Resistive Switching Memory

To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient (UFEE) baseband processors. Traditional complementary metal-oxide-semiconductor (CMOS)-based baseband processors face two challenges in transistor scaling and the von Neumann bottleneck. To address these challenges, in-memory computing-based baseband processors using resistive random-access memory (RRAM) present an attractive solution. In this paper, we propose and demonstrate RRAM-based in-memory baseband processing for the widely adopted multiple-input-multiple-output orthogonal frequency division multiplexing (MIMO-OFDM) air interface. Its key feature is to execute the key operations, including discrete Fourier transform (DFT) and MIMO detection using linear minimum mean square error (L-MMSE) and zero forcing (ZF), in one-step. In addition, RRAM-based channel estimation as well as mapper/demapper modules are proposed. By prototyping and simulations, we demonstrate that the RRAM-based full-fledged communication system can significantly outperform its CMOS-based counterpart in terms of speed and energy efficiency by $10^3$ and $10^6$ times, respectively. The results pave a potential pathway for RRAM-based in-memory computing to be implemented in the era of the sixth generation (6G) mobile communications.

preprint2015arXiv

Tuning the Threshold Voltage of MoS2 Field-Effect Transistors via Surface Treatment

Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vth tuning of molybdenum disulfide (MoS2) field-effect transistors. By increasing and decreasing the amount of sulfur vacancies in the MoS2 surface, the Vth of MoS2 transistors can be left- and right-shifted, respectively. Transistors fabricated on perfect MoS2 flakes are found to exhibit two-fold enhancement in mobility and a very positive Vth. More importantly, our elegant hydrogen treatment is able to tune the large Vth to a small value without any performance degradation simply by reducing the atomic ratio of S:Mo slightly; in other words, creating a certain amount of sulfur vacancies in the MoS2 surface, which generate defect states in the band gap of MoS2 that mediate conduction of a MoS2 transistor in the subthreshold regime. First-principles calculations further indicate that the edge and width of defect band can be tuned according to the vacancy density. This work not only demonstrates for the first time the ease in tuning the Vth of MoS2 transistors, but also offers a process technology solution that is critical for further development of MoS2 as a mainstream electronic material.

preprint2014arXiv

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a metal-catalyzed graphene treatment process, nickel-etched-graphene electrodes were fabricated on MoS2 that yield contact resistance as low as 200 ohm-um. The substantial contact enhancement (~2 orders of magnitude) as compared to pure nickel electrodes, is attributed to the much smaller work function of nickel-graphene electrodes, together with the fact that presence of zigzag edges in the treated graphene surface enhances tunneling between nickel and graphene. To this end, the successful fabrication of a clean graphene-MoS2 interface and a low resistance nickel-graphene interface is critical for the experimentally measured low contact resistance. The potential of using graphene as an electrode interlayer demonstrated in this work paves the way towards achieving high performance next-generation transistors.