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Source author record

John T. L. Thong

John T. L. Thong appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

8 published item(s)

preprint2015arXiv

Invisible sensor: Simultaneous sensing and camouflaging in multiphysical fields

To manipulate various types of physical signals in one single device has long captivated the attention of scientists and engineers. This however is very challenging, if not impossible, even for emerging metamaterials. Up to date, many artificial materials have been proposed, theoretically and (or) experimentally, for manipulating various waves/signals on a one-function-one-device basis. In this work, for the very first time, we employ undecorated natural materials to experimentally demonstrate a simultaneous camouflage for thermal current and electric dc current on the same device. It demonstrates how ingenuity can overcome the limitations of natural material systems without the need for complex decoration to impart inhomogeneous and (or) anisotropic properties, which was previously considered impossible to accomplish except by using metamaterials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tuning the Threshold Voltage of MoS2 Field-Effect Transistors via Surface Treatment

Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vth tuning of molybdenum disulfide (MoS2) field-effect transistors. By increasing and decreasing the amount of sulfur vacancies in the MoS2 surface, the Vth of MoS2 transistors can be left- and right-shifted, respectively. Transistors fabricated on perfect MoS2 flakes are found to exhibit two-fold enhancement in mobility and a very positive Vth. More importantly, our elegant hydrogen treatment is able to tune the large Vth to a small value without any performance degradation simply by reducing the atomic ratio of S:Mo slightly; in other words, creating a certain amount of sulfur vacancies in the MoS2 surface, which generate defect states in the band gap of MoS2 that mediate conduction of a MoS2 transistor in the subthreshold regime. First-principles calculations further indicate that the edge and width of defect band can be tuned according to the vacancy density. This work not only demonstrates for the first time the ease in tuning the Vth of MoS2 transistors, but also offers a process technology solution that is critical for further development of MoS2 as a mainstream electronic material.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Length-dependent thermal conductivity in suspended single-layer graphene

Graphene exhibits extraordinary electronic and mechanical properties, and extremely high thermal conductivity. Being a very stable atomically thick membrane that can be suspended between two leads, graphene provides a perfect test platform for studying thermal conductivity in two-dimensional systems, which is of primary importance for phonon transport in low-dimensional materials. Here we report experimental measurements and non-equilibrium molecular dynamics simulations of thermal conduction in suspended single layer graphene as a function of both temperature and sample length. Interestingly and in contrast to bulk materials, when temperature at 300K, thermal conductivity keeps increasing and remains logarithmic divergence with sample length even for sample lengths much larger than the average phonon mean free path. This result is a consequence of the two-dimensional nature of phonons in graphene and provides fundamental understanding into thermal transport in two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a metal-catalyzed graphene treatment process, nickel-etched-graphene electrodes were fabricated on MoS2 that yield contact resistance as low as 200 ohm-um. The substantial contact enhancement (~2 orders of magnitude) as compared to pure nickel electrodes, is attributed to the much smaller work function of nickel-graphene electrodes, together with the fact that presence of zigzag edges in the treated graphene surface enhances tunneling between nickel and graphene. To this end, the successful fabrication of a clean graphene-MoS2 interface and a low resistance nickel-graphene interface is critical for the experimentally measured low contact resistance. The potential of using graphene as an electrode interlayer demonstrated in this work paves the way towards achieving high performance next-generation transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Manipulating Steady Heat Conduction by Sensu-shaped Thermal Metamaterials

The ability to design the control of heat flow has innumerable benefits in the design of electronic systems such as thermoelectric energy harvesters, solid-state lighting, and thermal imagers, where the thermal design plays a key role in performance and device reliability. However, to realize one advanced control function of thermal flux, one needs to design one sophisticated, multilayered and inhomogeneous thermal structure with different composition/shape at different regions of one device. In this work, we employ one identical sensu-unit with facile natural composition to experimentally realize a new class of thermal metamaterials for controlling thermal conduction (e.g., thermal concentrator, focusing/resolving, uniform heating), only resorting to positioning and locating the same unit element of sensu-shape structure. The thermal metamaterial unit and the proper arrangement of multiple identical units are capable of transferring, redistributing and managing thermal energy in a versatile fashion. It is also shown that our sensu-shape unit elements can be used in manipulating dc currents without any change in the layout for the thermal counterpart. The proposed scheme can also be applied to control dc electric currents and dc magnetic fields that governed by Laplace equation. These could markedly enhance the capabilities in thermal sensing, thermal imaging, thermal-energy storage, thermal packaging, thermal therapy, and more domains beyond.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Bilayer Isotropic Thermal Cloak

Invisibility has attracted intensive research in various communities, e.g., optics, electromagnetics, acoustics, thermodynamics, etc. However, the most of them have only been experimentally achieved by virtue of simplified approaches due to their inhomogeneous and extreme parameters imposed by transformation-optic method, and usually require challenging realization with metamaterials. In this paper, we demonstrate an advanced bilayer thermal cloak with naturally available materials first time. This scheme, directly from thermal conduction equation, has been validated as an exact cloak rather than a reduced one, and we experimentally confirmed its perfect performance (heat-front maintenance and heat protection) in an actual setup. The proposed scheme may open a new avenue to control the diffusive heat flow in ways inconceivable with phonons.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts

The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a process of metal-catalyzed etching in hydrogen, multiple nano-sized pits with zigzag edges are created in the graphene that form strong chemical bonds with deposited nickel metallization for source-drain contacts without the need for further annealing. This facile contact treatment prior to electrode metallization results in contact resistance as low as 100 ohm-um in single-layer graphene field-effect transistors, and 11 ohm-um in bilayer graphene transistors. The treatment is compatible with complementary metal-oxide-semiconductor fabrication processes, and holds great promise to meet the contact performance required for the integration of graphene in future integrated circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Phonon Transport in Suspended Single Layer Graphene

We report the first temperature dependent phonon transport measurements in suspended Cu-CVD single layer graphene (SLG) from 15K to 380K using microfabricated suspended devices. The thermal conductance per unit cross section $σ$/A increases with temperature and exhibits a peak near T~280K ($\pm$10K) due to the Umklapp process. At low temperatures (T<140K), the temperature dependent thermal conductivity scales as ~T^{1.5}, suggesting that the main contribution to thermal conductance arises from flexural acoustic (ZA) phonons in suspended SLG. The $σ$/A reaches a high value of 1.7$\times10^5 T^{1.5}$ W/m^2K, which is approaching the expected ballistic phonon thermal conductance for two-dimensional graphene sheets. Our results not only clarify the ambiguity in the thermal conductance, but also demonstrate the potential of Cu-CVD graphene for heat related applications.

0 citations0 reviewsNo code linkedOpen access