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Yeping Jiang

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Published work

8 published item(s)

preprint2022arXiv

Selective Trapping of Hexagonally Warped Topological Surface States in a Triangular Quantum Corral

The surface of a three-dimensional topological insulator (TI) hosts two-dimensional massless Dirac fermions (DFs), the gapless and spin-helical nature of which yields many exotic phenomena, such as the immunity of topological surface states (TSS) to back-scattering. This leads to their high transmission through surface defects or potential barriers. Quantum corrals, previously elaborated on metal surfaces, can act as nanometer-sized electronic resonators to trap Schrödinger electrons by quantum confinement. It is thus intriguing, concerning their peculiar nature, to put the Dirac electrons of TSS to the test in similar circumstances. Here, we report the behaviors of TSS in a triangular quantum corral (TQC) fabricated by epitaxially growing Bi bilayer nanostructures on the surfaces of Bi2Te3 films. Unlike a circular corral, the TQC is supposed to be totally transparent for DFs. By mapping the electronic structure of TSS inside TQCs through a low-temperature scanning tunneling microscope in the real space, both the trapping and de-trapping behaviors of the TSS electrons are observed. The selection rules are found to be governed by the geometry and spin texture of the constant energy contour of TSS upon the strong hexagonal warping in Bi2Te3. Careful analysis of the quantum interference patterns of quasi-bound states yields the corresponding wave vectors of trapped TSS, through which two trapping mechanisms favoring momenta in different directions are uncovered. Our work indicates the extended nature of TSS and elucidates the selection rules of the trapping of TSS in the presence of a complicated surface state structure, giving insights into the effective engineering of DFs in TIs.

preprint2015arXiv

Robust Surface States indicated by Magnetotransport in SmB6 Thin Films

SmB6 has been predicted and verified as a prototype of topological Kondo insulators (TKIs). Here we report longitudinal magnetoresistance and Hall coefficient measurements on co-sputtered nanocrystalline SmB6 films and try to find possible signatures of their topological properties. The magnetoresistance (MR) at 2 K is positive and linear (LPMR) at low field and becomes negative and quadratic at higher field. While the negative part is known from the reduction of the hybridization gap due to Zeeman splitting, the positive dependence is similar to what has been observed in other topological insulators (TI). We conclude that the LPMR is a characteristic feature of TI and is related to the linear dispersion near the Dirac cone. The Hall resistance shows a sign change around 50 K. It peaks and becomes nonlinear at around 10 K then decreases below 10 K. This indicates that carriers with opposite signs emerge below 50 K. Two films with different geometries (thickness and lateral dimension) show contrasting behavior below and above 50K, which proves the surface origin of the low temperature carriers in these films. The temperature dependence of magnetoresistance and the Hall data indicates that the surface states are likely non-trivial.

preprint2014arXiv

Anomalous magnetoresistance in the spinel superconductor LiTi2O4

Transition-metal oxides offer an opportunity to explore unconventional superconductors, where the superconductivity (SC) is often interrelated with novel phenomena such as spin/charge order, fluctuations, and Fermi surface instability (1-3). LiTi2O4 (LTO) is a unique compound in that it is the only known spinel oxide superconductor. In addition to electron-phonon coupling, electron-electron and spin fluctuation contributions have been suggested as playing important roles in the microscopic mechanism for its superconductivity (4-8). However, the lack of high quality single crystals has thus far prevented systematic investigation of their transport properties (9). Here, we report a careful study of transport and tunneling spectroscopy in epitaxial LTO thin films. In the superconducting state, the energy gap was found to decrease as a quadratic function of magnetic field. In the normal state, an unusual magnetoresistance (MR) was observed where it changes from anisotropic positive to isotropic negative as the temperature is increased. A constant charge carrier concentration without any abrupt change in lattice parameters as a function of temperature suggests that the isotropic MR stems from the suppression of spin scattering/fluctuations, while the anisotropic term originates from an orbital contribution. These observations point to an important role strong correlations play in this unique superconductor.

preprint2014arXiv

Charge ordering in the electron-doped superconductor Nd2-xCexCuO4

In cuprate high-temperature superconductors, an antiferromagnetic Mott insulating state can be destabilized toward unconventional superconductivity by either hole- or electron-doping. In addition to these two electronic phases there is now a copious amount of evidence that supports the presence of a charge ordering (CO) instability competing with superconductivity inside the pseudogap state of the hole-doped (p-type) cuprates, but so far there has been no evidence of a similar CO in their electron-doped (n-type) counterparts. Here we report resonant x-ray scattering (RXS) measurements which demonstrate the presence of charge ordering in the n-type cuprate Nd2-xCexCuO4 near optimal doping. Remarkably we find that the CO in Nd2-xCexCuO4 occurs with similar periodicity, and along the same direction, as the CO in p-type cuprates. However, in contrast to the latter, the CO onset in Nd2-xCexCuO4 is higher than the pseudogap temperature, and is actually in the same temperature range where antiferromagnetic fluctuations are first detected -- thereby showing that CO and antiferromagnetic fluctuations are likely coupled in n-type cuprates. Overall our discovery uncovers a missing piece of the cuprate phase diagram and opens a parallel path to the study of CO and its relationship to other phenomena, such as antiferromagnetism (AF) and high-temperature superconductivity.

preprint2014arXiv

Composition-spread Growth and the Robust Topological Surface State of Kondo insulator SmB6 Thin Films

Topological insulators are a class of materials with insulating bulk but protected conducting surfaces due to the combination of spin-orbit interactions and time-reversal symmetry. The surface states are topologically non-trivial and robust against non-magnetic backscattering, leading to interesting physics and potential quantum computing applications1, 2. Recently there has been a fast growing interest in samarium hexboride (SmB6), a Kondo insulator predicted to be the first example of a correlated topological insulator3, 4. Here we fabricated smooth thin films of nanocrystalline SmB6 films. Their transport behavior indeed shows that SmB6 is a bulk insulator with topological surface states. Upon decreasing the temperature, the resistivity \r{ho} of Sm0.14B0.86 (SmB6) films display significant increase below 50 K due to hybridization gap formation, and it shows a saturation behavior below 10 K. The saturated resistance of our textured films is similar to that of the single crystals, suggesting that this conduction is from the surface and robust against grain boundary scatterings. Point contact spectroscopy (PCS) of the film using a superconducting tip displays both a Kondo Fano resonance and Andreev reflection, suggesting the existence of both an insulating Kondo lattice and metallic surface states.

preprint2013arXiv

Mass acquisition of Dirac fermions in Cr-doped topological insulator Sb2Te3 films

We introduce time-reversal-symmetry breaking by doping Cr atoms into the topmost quintuple layer or into the bulk of Sb2Te3 thin films. We find that even at a high Cr-doping level the Landau level spectrum keeps a good quality, enabling the first demonstration of deviation of the zero-mode Landau level, induced by the acquisition of a mass term in the surface states in the presence of surface or bulk magnetic doping. The magnitude of the mass term in the surface states increases with increasing Cr-doping level. Our observation suggests Cr-doped Sb2Te3 is a promising candidate for the realization of the proposed novel magnetoelectric effects.

preprint2011arXiv

Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping

High-quality Sb2Te3 films are obtained by molecular beam epitaxy on graphene substrate and investigated by in situ scanning tunneling microscopy/spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and SbTe antisites in agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range of the bulk band gap. This establishes the necessary condition to explore topological insulator behaviors near the Dirac point.

preprint2011arXiv

Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb2Te3 thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in Sb2Te3 topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as 2D massless Dirac fermion system is achieved. We demonstrate that 4 quintuple layers are the thickness limit for Sb2Te3 thin film being a 3D topological insulator. The mechanism of the Landau level broadening is discussed in terms of enhanced quasiparticle lifetime.