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Yen-Lin Huang

Yen-Lin Huang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Toward 100% Spin-Orbit Torque Efficiency with High Spin-Orbital Hall Conductivity Pt-Cr Alloys

5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the damping-like SOT efficiencies ($ξ_{DL}$) of Pt and Pt alloys have still been limited to $ξ_{DL}$<0.5. Here we present that with proper alloying elements, particularly 3d transition metals V and Cr, a high spin-orbital Hall conductivity ($σ_{SH}{\sim}6.5{\times}10^{5}({\hbar}/2e)Ω^{-1}{\cdot} m^{-1}$) can be developed. Especially for the Cr-doped case, an extremely high $ξ_{DL}{\sim}0.9$ in a Pt$_{0.69}$Cr$_{0.31}$/Co device can be achieved with a moderate Pt$_{0.69}$Cr$_{0.31}$ resistivity of $ρ_{xx}{\sim}133 μΩ{\cdot}cm$. A low critical SOT-driven switching current density of $J_{c}{\sim}3.2{\times}10^{6} A{\cdot}cm^{-2}$ is also demonstrated. The damping constant ($α$) of Pt$_{0.69}$Cr$_{0.31}$/FM structure is also found to be reduced to 0.052 from the pure Pt/FM case of 0.078. The overall high $σ_{SH}$, giant $ξ_{DL}$, moderate $ρ_{xx}$, and reduced $α$ of such a Pt-Cr/FM heterostructure makes it promising for versatile extremely low power consumption SOT memory applications.

preprint2020arXiv

Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wall

Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the giga-Hertz (GHz) regime, where the effect of dipolar oscillation is important. In this work, an unexpected giant GHz conductivity on the order of 103 S/m is observed in certain BiFeO3 DWs, which is about 100,000 times greater than the carrier-induced dc conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the ac conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for RF applications.