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Yanyong Li

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cond-mat.mtrl-sci cond-mat.mes-hall physics.flu-dyn physics.optics

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preprint2026arXiv

Dynamic Water-Wave Tweezers

Following a recent demonstration of stable trapping of floating particles by stationary (monochromatic) structured water waves [Nature 638, 394 (2025)], we report dynamic water-wave tweezers that enable controllable transport of trapped particles along arbitrary trajectories on the water surface. We employ a triangular lattice formed by the interference of three plane waves, which can trap particles, depending on parameters, either at intensity maxima or at intensity zeros (vortices). By introducing small frequency detunings between the interfering waves, we control 2D motion of the lattice and trapped particles. This approach is robust and effective over a relatively broad range of particle sizes and wave frequencies, offering remarkable new possibilities for noncontact manipulation of floating (e.g., biological and soft-matter) objects in fluidic environments.

preprint2015arXiv

Magnetic Coupling in Ferromagnetic Semiconductor GaMnAs/AlGaMnAs Bilayer Devices

We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of the GaMnAs layer with applying out of plane magnetic field. After low temperature annealing, the magnetic easy axis of the AlGaMnAs layer switches from out of plane into in-plane and the interlayer coupling efficiency is reduced from up to 0.6 to less than 0.4. However, the magnetic coupling penetration depth for the annealed device is twice that of the as-grown bilayer device.

preprint2013arXiv

Anisotropic Current-Controlled Magnetization Reversal in the Ferromagnetic Semiconductor (Ga,Mn)As

Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices.