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Researcher profile

G. N. Wei

G. N. Wei contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

2 published item(s)

preprint2015arXiv

Magnetic Coupling in Ferromagnetic Semiconductor GaMnAs/AlGaMnAs Bilayer Devices

We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of the GaMnAs layer with applying out of plane magnetic field. After low temperature annealing, the magnetic easy axis of the AlGaMnAs layer switches from out of plane into in-plane and the interlayer coupling efficiency is reduced from up to 0.6 to less than 0.4. However, the magnetic coupling penetration depth for the annealed device is twice that of the as-grown bilayer device.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anisotropic Current-Controlled Magnetization Reversal in the Ferromagnetic Semiconductor (Ga,Mn)As

Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices.

0 citations0 reviewsNo code linkedOpen access