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Researcher profile

Yanwu Xie

Yanwu Xie contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2022arXiv

Surface charge writing and non-volatile control of superconductivity in LaAlO3/KTaO3(111) heterostructure

The oxide interface between LaAlO3 and KTaO3(111) can host an electron gas that condenses into superconductivity at low temperatures. In this work, we demonstrate a local and non-volatile control of this electron gas using a biased conducting atomic force microscope tip. By scanning the tip, charges can be accumulated on the surface of LaAlO3, which subsequently tune the conduction of the buried LaAlO3/KTaO3(111) interface largely, varying from conducting (superconducting) to insulating states. The tuning effects are stable for > 20 h at room temperature. The maximum modulation of carrier density is > 8 times 10^13/cm^2. This result suggests a new model system in which rewritable superconducting, normal, and insulating states can be flexibly defined in the same material on demand.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Two-dimensional superconductivity at the surfaces of KTaO3 gated with ionic liquid

The recent observation of superconductivity at the interfaces between KTaO3 and EuO (or LaAlO3) offers a new example of emergent phenomena at oxide interfaces. This superconductivity exhibits an unusual strong dependence on the crystalline orientation of KTaO3 and its superconducting transition temperature Tc is nearly one order of magnitude higher than that of the seminal LaAlO3/SrTiO3 interface. To understand its mechanism, it is crucial to address if the formation of oxide interfaces is indispensable for the presence of superconductivity. Here, by exploiting ionic liquid (IL) gating, we obtain superconductivity at KTaO3 (111) and (110) surfaces with Tc up to 2.0 K and 1.0 K, respectively. This oxide-interface-free superconductivity gives a clear experimental evidence that the essential physics of KTaO3 interface superconductivity lies in the KTaO3 surfaces doped with electrons. Moreover, the ability to control superconductivity at surfaces with IL provides a simple way to study the intrinsic superconductivity in KTaO3.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Emergence of high-temperature superconductivity at the interface of two Mott insulators

Interfacial superconductivity has manifested itself in various types of heterostructures: band insulator-band insulator, band insulator-Mott insulator, and Mott insulator-metal. We report the observation of high-temperature superconductivity (HTS) in a complementary and long expected type of heterostructures, which consists of two Mott insulators, La2CuO4 (LCO) and PrBa2Cu3O7 (PBCO). By carefully controlling oxidization condition and selectively doping CuO2 planes with Fe atoms, which suppress superconductivity, we found that the superconductivity arises at the LCO side and is confined within no more than two unit cells (about 2.6 nm) near the interface. A phenomenon of overcome the Fe barrier will show up if excess oxygen is present during growth. Some possible mechanisms for the interfacial HTS have been discussed, and we attribute it to the redistribution of oxygen.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrostatic modulation of the lateral carrier density profile in field effect devices with non-linear dielectrics

We study the effects of electrostatic gating on the lateral distribution of charge carriers in two dimensional devices, in a non-linear dielectric environment. We compute the charge distribution using the Thomas-Fermi approximation to model the electrostatics of the system. The electric field lines generated by the gate are focused at the edges of the device, causing an increased depletion near the edges, compared to the center of the device. This effect strongly depends on the dimensions of the device, and the non-linear dielectric constant of the substrate. We experimentally demonstrate this effect using scanning superconducting interference device (SQUID) microscopy images of current distributions in gated LaAlO$_3$/SrTiO$_3$ heterostructures.

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