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Yanwu Xie

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el cond-mat.supr-con

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preprint2022arXiv

Surface charge writing and non-volatile control of superconductivity in LaAlO3/KTaO3(111) heterostructure

The oxide interface between LaAlO3 and KTaO3(111) can host an electron gas that condenses into superconductivity at low temperatures. In this work, we demonstrate a local and non-volatile control of this electron gas using a biased conducting atomic force microscope tip. By scanning the tip, charges can be accumulated on the surface of LaAlO3, which subsequently tune the conduction of the buried LaAlO3/KTaO3(111) interface largely, varying from conducting (superconducting) to insulating states. The tuning effects are stable for > 20 h at room temperature. The maximum modulation of carrier density is > 8 times 10^13/cm^2. This result suggests a new model system in which rewritable superconducting, normal, and insulating states can be flexibly defined in the same material on demand.

preprint2022arXiv

Two-dimensional superconductivity at the surfaces of KTaO3 gated with ionic liquid

The recent observation of superconductivity at the interfaces between KTaO3 and EuO (or LaAlO3) offers a new example of emergent phenomena at oxide interfaces. This superconductivity exhibits an unusual strong dependence on the crystalline orientation of KTaO3 and its superconducting transition temperature Tc is nearly one order of magnitude higher than that of the seminal LaAlO3/SrTiO3 interface. To understand its mechanism, it is crucial to address if the formation of oxide interfaces is indispensable for the presence of superconductivity. Here, by exploiting ionic liquid (IL) gating, we obtain superconductivity at KTaO3 (111) and (110) surfaces with Tc up to 2.0 K and 1.0 K, respectively. This oxide-interface-free superconductivity gives a clear experimental evidence that the essential physics of KTaO3 interface superconductivity lies in the KTaO3 surfaces doped with electrons. Moreover, the ability to control superconductivity at surfaces with IL provides a simple way to study the intrinsic superconductivity in KTaO3.

preprint2021arXiv

Emergence of high-temperature superconductivity at the interface of two Mott insulators

Interfacial superconductivity has manifested itself in various types of heterostructures: band insulator-band insulator, band insulator-Mott insulator, and Mott insulator-metal. We report the observation of high-temperature superconductivity (HTS) in a complementary and long expected type of heterostructures, which consists of two Mott insulators, La2CuO4 (LCO) and PrBa2Cu3O7 (PBCO). By carefully controlling oxidization condition and selectively doping CuO2 planes with Fe atoms, which suppress superconductivity, we found that the superconductivity arises at the LCO side and is confined within no more than two unit cells (about 2.6 nm) near the interface. A phenomenon of overcome the Fe barrier will show up if excess oxygen is present during growth. Some possible mechanisms for the interfacial HTS have been discussed, and we attribute it to the redistribution of oxygen.

preprint2020arXiv

Electrostatic modulation of the lateral carrier density profile in field effect devices with non-linear dielectrics

We study the effects of electrostatic gating on the lateral distribution of charge carriers in two dimensional devices, in a non-linear dielectric environment. We compute the charge distribution using the Thomas-Fermi approximation to model the electrostatics of the system. The electric field lines generated by the gate are focused at the edges of the device, causing an increased depletion near the edges, compared to the center of the device. This effect strongly depends on the dimensions of the device, and the non-linear dielectric constant of the substrate. We experimentally demonstrate this effect using scanning superconducting interference device (SQUID) microscopy images of current distributions in gated LaAlO$_3$/SrTiO$_3$ heterostructures.

preprint2016arXiv

Anisotropic transport at the LaAlO3/SrTiO3 interface explained by microscopic imaging of channel-flow over SrTiO3 domains

Oxide interfaces, including the LaAlO3/SrTiO3 interface, have been a subject of intense interest for over a decade due to their rich physics and potential as low dimensional nanoelectronic systems. The field has reached the stage where efforts are invested in developing devices. It is critical now to understand the functionalities and limitations of such devices. Recent scanning probe measurements of the LaAlO3/SrTiO3 interface have revealed locally enhanced current flow and accumulation of charge along channels related to SrTiO3 structural domains. These observations raised a key question regarding the role these modulations play in the macroscopic properties of devices. Here we show that the microscopic picture, mapped by scanning superconducting quantum interference device, accounts for a substantial part of the macroscopically measured transport anisotropy. We compared local flux data with transport values, measured simultaneously, over various SrTiO3 domain configurations. We show a clear relation between maps of local current density over specific domain configurations and the measured anisotropy for the same device. The domains divert the direction of current flow, resulting in a direction dependent resistance. We also show that the modulation can be significant and that in some cases up to 95% of the current is modulated over the channels. The orientation and distribution of the SrTiO3 structural domains change between different cooldowns of the same device or when electric fields are applied, affecting the device behavior. Our results, highlight the importance of substrate physics, and in particular, the role of structural domains, in controlling electronic properties of LaAlO3/SrTiO3 devices. Further, these results point to new research directions, exploiting the STO domains ability to divert or even carry current.

preprint2014arXiv

Quantum longitudinal and Hall transport at the LaAlO3/SrTiO3 interface at low electron densities

We examined the magneto-transport behavior of electrons confined at the conducting LaAlO3/SrTiO3 interface in the low sheet carrier density regime. We observed well resolved Shubnikov-de Haas quantum oscillations in the longitudinal resistance, and a plateau-like structure in the Hall conductivity. The Landau indices of the plateaus in the Hall conductivity data show spacing close to 4, in units of the quantum of conductance. These experimental features can be explained by a magnetic breakdown transition, which quantitatively explains the area, structure, and degeneracy of the measured Fermi surface.

preprint2013arXiv

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces

The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures.

preprint2011arXiv

Control of electronic conduction at an oxide heterointerface using surface polar adsorbates

The transfer of electrons between a solid surface and adsorbed atomic or molecular species is fundamental in natural and synthetic processes, being at the heart of most catalytic reactions and many sensors. In special cases, metallic conduction can be induced at the surface of, for example, Si-terminated SiC1, or mixed-terminated ZnO2, in the presence of a hydrogen adlayer. Generally, only the surface atoms are significantly affected by adsorbates. However, remotely changing electronic states far from the adsorbed layer is possible if these states are electrostatically coupled to the surface. Here we show that the surface adsorption of common solvents such as acetone, ethanol, and water can induce a large change (factor of three) in the conductivity at the buried interface between SrTiO3 substrates and LaAlO3 thin films3-8. This phenomenon is observed only for polar solvents. Our result provides experimental evidence that adsorbates at the LaAlO3 surface induce accumulation of electrons at the LaAlO3/SrTiO3 interface, suggesting a general polarization-facilitated electronic transfer mechanism, which can be used for sensor applications.

preprint2010arXiv

Charge writing at the LaAlO3/SrTiO3 surface

Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential.