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Researcher profile

Yaliang Gui

Yaliang Gui contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticsphysics.app-phEmerging Technologies

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Published work

5 published item(s)

preprint2022arXiv

100 GHz Micrometer compact broadband Monolithic ITO Mach Zehnder Interferometer Modulator enabling 3500 times higher Packing Density

Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready silicon based modulators and conventional material based devices utilizing Lithium niobate fall short in simultaneously providing high chip packaging density and fast speed. Current driven ITO based modulators have the potential to achieve both enabled by efficient light matter interactions. Here, we introduce micrometer compact Mach Zehnder Interferometer (MZI) based modulators capable of exceeding 100 GHz switching rates. Integrating ITO thin films atop a photonic waveguide, spectrally broadband, and compact MZI phase shifter. Remarkably, this allows integrating more than 3500 of these modulators within the same chip area as only one single silicon MZI modulator. The modulator design introduced here features a holistic photonic, electronic, and RF-based optimization and includes an asymmetric MZI tuning step to optimize the Extinction Ratio (ER) to Insertion Loss (IL) and dielectric thickness sweep to balance the tradeoffs between ER and speed. Driven by CMOS compatible bias voltage levels, this device is the first to address next generation modulator demands for processors of the machine intelligence revolution, in addition to the edge and cloud computing demands as well as optical transceivers alike.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electrical Programmable Multi-Level Non-volatile Photonic Random-Access Memory

Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed multilevel memory capability, but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package challenges. Here we demonstrate a multi-state electrically-programmed low-loss non-volatile photonic memory based on a broadband transparent phase change material (Ge2Sb2Se5, GSSe) with ultra-low absorption in the amorphous state. A zero-static-power and electrically-programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform, featuring efficient amplitude modulation up to 0.2 dB/μm and an ultra-low insertion loss of total 0.12 dB for a 4-bit memory showing a 100x improved signal to loss ratio compared to other phase-change-materials based photonic memories. We further optimize the positioning of dual micro-heaters validating performance tradeoffs. Experimentally we demonstrate a half-a million cyclability test showcasing the robust approach of this material and device. Low-loss photonic retention-of-state adds a key feature for photonic functional and programmable circuits impacting many applications including neural networks, LiDAR, and sensors for example.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Self-Powered Broadband Photodetector Based on MoS2/Sb2Te3 Heterojunctions: A promising approach for highly sensitive detection

Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for sensing, imaging, communication, and optical computing systems to convert optical signals to electrical signals. Here we experimentally show a novel combination of topological insulators (TIs) and transition metal chalcogenides (TMDs) based self-powered photodetectors with ultra-low dark current and high sensitivity. The photodetector formed by a MoS2/Sb2Te3 heterogeneous junction exhibits a low dark current of 2.4 pA at zero bias and 1.2 nA at 1V. It shows a high photoresponsivity of > 150 mA W-1 at zero bias and rectification of 3 times at an externally applied bias voltage of 1V. The excellent performance of the proposed photodetector with its innovative material combination of TMDs and TIs paves the way for the development of novel high-performance optoelectronic devices. The TIs/TMDs transfer used to form the heterojunction is simple to incorporate into on-chip waveguide systems, enabling future applications on highly integrated photonic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Analog Computing with Metatronic Circuits

Analog photonic solutions offer unique opportunities to address complex computational tasks with unprecedented performance in terms of energy dissipation and speeds, overcoming current limitations of modern computing architectures based on electron flows and digital approaches. The lack of modularization and lumped element reconfigurability in photonics has prevented the transition to an all-optical analog computing platform. Here, we explore a nanophotonic platform based on epsilon-near-zero materials capable of solving in the analog domain partial differential equations (PDE). Wavelength stretching in zero-index media enables highly nonlocal interactions within the board based on the conduction of electric displacement, which can be monitored to extract the solution of a broad class of PDE problems. By exploiting control of deposition technique through process parameters, we demonstrate the possibility of implementing the proposed nano-optic processor using CMOS-compatible indium-tin-oxide, whose optical properties can be tuned by carrier injection to obtain programmability at high speeds and low energy requirements. Our nano-optical analog processor can be integrated at chip-scale, processing arbitrary inputs at the speed of light.

0 citations0 reviewsNo code linkedOpen access