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The paper proposes a method to characterize the bend discontinuity for plasmonic and spoof plasmonic waveguides in terms of scattering parameters. By means of this method, the waveguide is modelled by a two-port network and its scattering parameters are extracted. The parameters for the L-shaped sharp curved bends at different frequencies and under different bending angles are determined.
The propagation of light along an infinite 2D chain of silver nanorods is analyzed and the dispersion for this waveguide is computed using field computation for a finite chain of nanorods. In this work, Generalized Multipole Technique is used for the analysis. This method calculates the imaginary and real parts of the propagation constant by exciting the chain in one end and observing propagation of modes along the chain far enough from the excitation. It is shown that a short chain of finite length is sufficient for the calculation of the phase constant while the attenuation constant requires a longer chain. Field distribution is depicted for even and odd modes and it is shown that in the simulated frequency range only two modes can be excited and can propagate along the waveguide.
This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosphorene MOSFET was stable in atmosphere for at least 100 h. With annealing at 200°C in dry nitrogen for 1 h, its drain current increased by an order of magnitude to approximately 100 mA/mm, which could be attributed to the reduction of trapped charge in Al2O3 and/or Schottky barrier at the source and drain contacts. Thereafter, the drain current was stable between -50°C and 150°C up to at least 1000 h. These promising results suggest that environmental protection of phosphorene should not be a major concern, and passivation of phosphorene should focus on its effect on electronic control and transport as in conventional silicon MOSFETs. With cutoff frequencies approaching the gigahertz range, the present phosphorene MOSFET, although far from being optimized, can meet the frequency and stability requirements of most flexible electronics for which phosphorene is intrinsically advantageous due to its corrugated lattice structure.
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