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Researcher profile

Yafis Barlas

Yafis Barlas contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

4 published item(s)

preprint2025arXiv

Superfluid weight cross-over and critical temperature enhancement in singular flat bands

Non-analytic Bloch eigenstates at isolated band degeneracy points exhibit singular behavior in the quantum metric. Here, a description of superfluid weight for zero-energy flat bands in proximity to other high-energy bands is presented, where they together form a singular band gap system. When the singular band gap closes, the geometric and conventional contributions to the superfluid weight as a function of the superconducting gap exhibit different crossover behaviors. The scaling behavior of superfluid weight with the band gap is studied in detail, and the effect on the Berezinskii-KosterlitzThouless (BKT) transition temperature is explored. It is discovered that tuning the singular band gap provides a unique mechanism for enhancing the supercurrent and critical temperature of two-dimensional (2D) superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tuning Spin Transport in a Graphene Antiferromagnetic Insulator

Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an all-graphene electrical circuit, for the first time we demonstrate a selective tuning of ambipolar spin transport through graphene $ν$=0 AFMIs. By modulating polarities of the excitation bias, magnetic fields, and charge carriers that host opposite chiralities, we show that the difference between spin chemical potentials of adjacent edge channels in the spin-injector region is crucial in tuning spin-transport observed across graphene AFMI. We demonstrate that non-local response vanishes upon reversing directions of the co-propagating edge channels when the spin-filters in our devices are no longer selective for a particular spin-polarization. Our results establish a versatile set of methods to tune pure spin transport via an anti-ferromagnetic media and open a pathway to explore their applications for a broad field of antiferromagnetic spintronics research.

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preprint2020arXiv

Topological braiding of non-Abelian mid-gap defects in classical meta-materials

Non-trivial braid-group representations appear as non-Abelian quantum statistics of emergent Majorana zero modes in one and two-dimensional topological superconductors. Here, we generate such representations with topologically protected domain-wall modes in a classical analogue of the Kitaev superconducting chain, with a particle-hole like symmetry and a Z2 topological invariant. The mid-gap modes are found to exhibit distinct fusion channels and rich non-Abelian braiding properties, which are investigated using a T-junction setup. We employ the adiabatic theorem to explicitly calculate the braiding matrices for one and two pairs of these mid-gap topological defects.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures

The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K' valley in TLG's lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering.

0 citations0 reviewsNo code linkedOpen access