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Source author record

Y. S. Hou

Y. S. Hou appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-el

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Published work

3 published item(s)

preprint2020arXiv

Alloying V in MnBi$_2$Te$_4$ for Robust Ferromagnetic Coupling and Quantum Anomalous Hall Effect

The intrinsic antiferromagnetic (AFM) interlayer coupling in two-dimensional magnetic topological insulator MnBi$_2$Te$_4$ places a restriction on realizing stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895 (2020)]. Through density functional theory calculations, we demonstrate the possibility of tuning the AFM coupling to the ferromagnetic coupling in MnBi$_2$Te$_4$ films by alloying about 50% V with Mn. As a result, QAHE can be achieved without alternation with the even or odd septuple layers. This provides a practical strategy to get robust QAHE in ultrathin MnBi$_2$Te$_4$ films, rendering them attractive for technological innovations.

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preprint2020arXiv

Axion Insulator State with ferromagnetic ordering in CrI3/Bi2Se3/MnBi2Se4 Heterostructure

Realizing axion insulator state with a uniform magnetization considerably facilitates experimental explorations of the intriguing topological magnetoelectric effect, a hallmark of three-dimensional (3D) topological insulators (TIs). Through density functional theory calculations and four-band model studies, we find that magnetic ions Cr3+ in monolayer CrI3 and Mn2+ in septuple-layer MnBi2Se4 have opposite exchange couplings to the topological surface states of 3D TI Bi2Se3. As an exciting result of such opposite exchange couplings, axion insulator state is realized by a uniform magnetization in CrI3/Bi2Se3/MnBi2Se4 heterostructure. Our work opens up opportunities for exploring topological magnetoelectric effect realized by the uniform magnetization induced axion insulator state in heterostructures of 3D TIs and two-dimensional van der Waals ferromagnetic insulators.

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preprint2019arXiv

First-principles studies of spin-phonon coupling in Cr2Ge2Te6 monolayer

We perform systematic first-principles calculations to investigate the spin-phonon coupling (SPC) of Cr2Ge2Te6 (CGT) monolayer (ML). It is found that the Eg phonon mode at 211.8 cm^{-1} may have a SPC as large as 3.19 cm^{-1}, as it directly alters the superexchange interaction along the Cr-Te-Cr pathway. Furthermore, the strength of SPC of the CGT ML can be further enhanced by an in-plane compressive strain. These results provide useful insights for the understanding of SPC in novel two-dimensional magnetic semiconductors and may guide the design of spintronic and spin Seebeck materials and devices.

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