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Source author record

R. Q. Wu

R. Q. Wu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-con

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Published work

8 published item(s)

preprint2020arXiv

Alloying V in MnBi$_2$Te$_4$ for Robust Ferromagnetic Coupling and Quantum Anomalous Hall Effect

The intrinsic antiferromagnetic (AFM) interlayer coupling in two-dimensional magnetic topological insulator MnBi$_2$Te$_4$ places a restriction on realizing stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895 (2020)]. Through density functional theory calculations, we demonstrate the possibility of tuning the AFM coupling to the ferromagnetic coupling in MnBi$_2$Te$_4$ films by alloying about 50% V with Mn. As a result, QAHE can be achieved without alternation with the even or odd septuple layers. This provides a practical strategy to get robust QAHE in ultrathin MnBi$_2$Te$_4$ films, rendering them attractive for technological innovations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Axion Insulator State with ferromagnetic ordering in CrI3/Bi2Se3/MnBi2Se4 Heterostructure

Realizing axion insulator state with a uniform magnetization considerably facilitates experimental explorations of the intriguing topological magnetoelectric effect, a hallmark of three-dimensional (3D) topological insulators (TIs). Through density functional theory calculations and four-band model studies, we find that magnetic ions Cr3+ in monolayer CrI3 and Mn2+ in septuple-layer MnBi2Se4 have opposite exchange couplings to the topological surface states of 3D TI Bi2Se3. As an exciting result of such opposite exchange couplings, axion insulator state is realized by a uniform magnetization in CrI3/Bi2Se3/MnBi2Se4 heterostructure. Our work opens up opportunities for exploring topological magnetoelectric effect realized by the uniform magnetization induced axion insulator state in heterostructures of 3D TIs and two-dimensional van der Waals ferromagnetic insulators.

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preprint2020arXiv

Itinerant ferromagnetism and intrinsic anomalous Hall effect in amorphous iron-germanium

The amorphous iron-germanium system ($a$-Fe$_x$Ge$_{1-x}$) lacks long-range structural order and hence lacks a meaningful Brillouin zone. The magnetization of \aFeGe is well explained by the Stoner model for Fe concentrations $x$ above the onset of magnetic order around $x=0.4$, indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe-$3d$ states sufficiently to polarize the electronic structure despite $\mathbf{k}$ being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity $ρ_{xy}^{\mathrm{AH}}$ relative to crystalline FeGe; this $ρ_{xy}^{\mathrm{AH}}$ is compared to density functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied $\mathbf{k}$-states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of $a$-Fe$_x$Ge$_{1-x}$ ($0.38 \leq x \leq 0.61$). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to $\mathbf{k}$-space. This result and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.

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preprint2019arXiv

First-principles studies of spin-phonon coupling in Cr2Ge2Te6 monolayer

We perform systematic first-principles calculations to investigate the spin-phonon coupling (SPC) of Cr2Ge2Te6 (CGT) monolayer (ML). It is found that the Eg phonon mode at 211.8 cm^{-1} may have a SPC as large as 3.19 cm^{-1}, as it directly alters the superexchange interaction along the Cr-Te-Cr pathway. Furthermore, the strength of SPC of the CGT ML can be further enhanced by an in-plane compressive strain. These results provide useful insights for the understanding of SPC in novel two-dimensional magnetic semiconductors and may guide the design of spintronic and spin Seebeck materials and devices.

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preprint2016arXiv

Origin and Suppression of $1/f$ Magnetic Flux Noise

Magnetic flux noise is a dominant source of dephasing and energy relaxation in superconducting qubits. The noise power spectral density varies with frequency as $1/f^α$ with $α\sim 1$ and spans 13 orders of magnitude. Recent work indicates that the noise is from unpaired magnetic defects on the surfaces of the superconducting devices. Here, we demonstrate that adsorbed molecular O$_2$ is the dominant contributor to magnetism in superconducting thin films. We show that this magnetism can be suppressed by appropriate surface treatment or improvement in the sample vacuum environment. We observe a suppression of static spin susceptibility by more than an order of magnitude and a suppression of $1/f$ magnetic flux noise power spectral density by more than a factor of 5. These advances open the door to realization of superconducting qubits with improved quantum coherence.

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preprint2015arXiv

Candidate source of flux noise in SQUIDs: adsorbed oxygen molecules

A major obstacle to using SQUIDs as qubits is flux noise. We propose that the heretofore mysterious spins producing flux noise could be $O_2$ molecules adsorbed on the surface. Using density functional theory calculations, we find that an $O_2$ molecule adsorbed on an α-alumina surface has a magnetic moment of ~1.8 μB. When the spin is oriented perpendicular to the axis of the O-O bond, the barrier to spin rotations is about 10 mK. Monte Carlo simulations of ferromagnetically coupled, anisotropic XY spins on a square lattice find 1/f magnetization noise, consistent with flux noise in Al SQUIDs.

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preprint2010arXiv

Density-functional studies of spin-orbit splitting in graphene on metals

Spin-orbit splitting in graphene on Ni, Au, or Ag (111) substrates was examined on the basis of density-functional theory. Graphene grown on the three metals was found to have Rashba splitting of a few or several tens of meV. The strong splitting obtained on Au or Ag substrates was mainly ascribed to effective hybridization of graphene $p_{z}$ state with Au or Ag $d_{z^{2}}$ states, rather than charge transfer as previously proposed. Our work provides theoretical understandings of the metal-induced Rashba effect in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Ferromagnetism in 2p Light Element-Doped II-oxide and III-nitride Semiconductors

II-oxide and III-nitride semiconductors doped by nonmagnetic 2p light elements are investigated as potential dilute magnetic semiconductors (DMS). Based on our first-principle calculations, nitrogen doped ZnO, carbon doped ZnO, and carbon doped AlN are predicted to be ferromagnetic. The ferromagnetism of such DMS materials can be attributed to a p-d exchange-like p-p coupling interaction which is derived from the similar symmetry and wave function between the impurity (p-like t_2) and valence (p) states. We also propose a co-doping mechanism, using beryllium and nitrogen as dopants in ZnO, to enhance the ferromagnetic coupling and to increase the solubility and activity.

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