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Researcher profile

R. Q. Wu

R. Q. Wu contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hall

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Published work

4 published item(s)

preprint2020arXiv

Alloying V in MnBi$_2$Te$_4$ for Robust Ferromagnetic Coupling and Quantum Anomalous Hall Effect

The intrinsic antiferromagnetic (AFM) interlayer coupling in two-dimensional magnetic topological insulator MnBi$_2$Te$_4$ places a restriction on realizing stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895 (2020)]. Through density functional theory calculations, we demonstrate the possibility of tuning the AFM coupling to the ferromagnetic coupling in MnBi$_2$Te$_4$ films by alloying about 50% V with Mn. As a result, QAHE can be achieved without alternation with the even or odd septuple layers. This provides a practical strategy to get robust QAHE in ultrathin MnBi$_2$Te$_4$ films, rendering them attractive for technological innovations.

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preprint2020arXiv

Axion Insulator State with ferromagnetic ordering in CrI3/Bi2Se3/MnBi2Se4 Heterostructure

Realizing axion insulator state with a uniform magnetization considerably facilitates experimental explorations of the intriguing topological magnetoelectric effect, a hallmark of three-dimensional (3D) topological insulators (TIs). Through density functional theory calculations and four-band model studies, we find that magnetic ions Cr3+ in monolayer CrI3 and Mn2+ in septuple-layer MnBi2Se4 have opposite exchange couplings to the topological surface states of 3D TI Bi2Se3. As an exciting result of such opposite exchange couplings, axion insulator state is realized by a uniform magnetization in CrI3/Bi2Se3/MnBi2Se4 heterostructure. Our work opens up opportunities for exploring topological magnetoelectric effect realized by the uniform magnetization induced axion insulator state in heterostructures of 3D TIs and two-dimensional van der Waals ferromagnetic insulators.

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preprint2020arXiv

Itinerant ferromagnetism and intrinsic anomalous Hall effect in amorphous iron-germanium

The amorphous iron-germanium system ($a$-Fe$_x$Ge$_{1-x}$) lacks long-range structural order and hence lacks a meaningful Brillouin zone. The magnetization of \aFeGe is well explained by the Stoner model for Fe concentrations $x$ above the onset of magnetic order around $x=0.4$, indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe-$3d$ states sufficiently to polarize the electronic structure despite $\mathbf{k}$ being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity $ρ_{xy}^{\mathrm{AH}}$ relative to crystalline FeGe; this $ρ_{xy}^{\mathrm{AH}}$ is compared to density functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied $\mathbf{k}$-states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of $a$-Fe$_x$Ge$_{1-x}$ ($0.38 \leq x \leq 0.61$). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to $\mathbf{k}$-space. This result and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.

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preprint2019arXiv

First-principles studies of spin-phonon coupling in Cr2Ge2Te6 monolayer

We perform systematic first-principles calculations to investigate the spin-phonon coupling (SPC) of Cr2Ge2Te6 (CGT) monolayer (ML). It is found that the Eg phonon mode at 211.8 cm^{-1} may have a SPC as large as 3.19 cm^{-1}, as it directly alters the superexchange interaction along the Cr-Te-Cr pathway. Furthermore, the strength of SPC of the CGT ML can be further enhanced by an in-plane compressive strain. These results provide useful insights for the understanding of SPC in novel two-dimensional magnetic semiconductors and may guide the design of spintronic and spin Seebeck materials and devices.

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