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Y. Qi

Y. Qi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-conQuantitative MethodsTissues and Organs

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Published work

7 published item(s)

preprint2026arXiv

Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: 2D free excitons, H-band, and the tidal effect

Bright electroluminescence (EL) from dopant-free ambipolar lateral p-n junctions in GaAs/AlGaAs single heterointerface (SH) heterostructures is used to probe neutral free excitons arising from two-dimensional electron and hole gases (2DEGs and 2DHGs). The EL spectra reveal both the heavy-hole neutral free exciton (X$^0$) and the high-energy free exciton of the H band (HE). A combination of transition energies, lifetimes, spatial emission profiles, and temperature dependences points to a predominantly two-dimensional character for these excitons at the SH. For X$^0$, the EL peak energies (1515.5-1515.7 meV) lie slightly above the corresponding bulk GaAs photoluminescence (PL) line at 1515.3 meV, while time-resolved measurements yield markedly shorter lifetimes for EL than for PL (337 ps vs. 1610 ps), consistent with recombination in a confined interfacial layer. The HE exciton exhibits a Stark blueshift under forward bias below threshold, and its energies and lifetimes (down to 575 ps) are tuned by the topgate voltage; above threshold, HE emission is quenched in favor of X$^0$. Finally, the tidal effect $-$ a form of pulsed EL generated by swapping the topgate voltage polarity in ambipolar field-effect transistors $-$ produces an X$^0$ line at the same energy as in the lateral p-n junction and reproduces the characteristic nonmonotonic frequency dependence of the brightness previously observed in quantum-well heterostructures, again indicating a 2D-like origin. Taken together, these results show electrically generated and controllable 2D-like excitons (HE and X$^0$), thereby bridging 2D exciton physics and 2DEG/2DHG platforms in dopant-free GaAs/AlGaAs SH devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mode-resolved reciprocal space mapping of electron-phonon interaction in the Weyl semimetal candidate Td-WTe$_2$

The selective excitation of coherent phonons provides unique capabilities to control fundamental properties of quantum materials on ultrafast time scales. For instance, in the presence of strong electron-phonon coupling, the electronic band structure can become substantially modulated. Recently, it was predicted that by this means even topologically protected states of matter can be manipulated and, ultimately, be destroyed: For the layered transition metal dichalcogenide Td-WTe$_2$, pairs of Weyl points are expected to annihilate as an interlayer shear mode drives the crystalline structure towards a centrosymmetric phase. By monitoring the changes in the electronic structure of Td-WTe$_2$ with femtosecond resolution, we provide here direct experimental evidence that the coherent excitation of the shear mode acts on the electronic states near the Weyl points. Band structure data in comparison with our results imply, furthermore, the periodic reduction in the spin splitting of bands near the Fermi energy, a distinct electronic signature of the non-centrosymmetric Td ground state of WTe$_2$. The comparison with higher-frequency coherent phonon modes finally proves the shear mode-selectivity of the observed changes in the electronic structure. Our real-time observations reveal direct experimental insights into electronic processes that are of vital importance for a coherent phonon-induced topological phase transition in Td-WTe$_2$.

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preprint2016arXiv

Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO$_3$

The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here we apply sub-picosecond duration, single-cycle terahertz pulses as an ultrafast electric field bias to prototypical BaTiO$_3$ ferroelectric thin films with the atomic-scale response probed by femtosecond x-ray scattering techniques. We show that electric fields applied perpendicular to the ferroelectric polarization drive large amplitude displacements of the titanium atoms along the ferroelectric polarization axis, comparable to that of the built-in displacements associated with the intrinsic polarization and incoherent across unit cells. This effect is associated with a dynamic rotation of the ferroelectric polarization switching on and then off on picosecond timescales. These transient polarization modulations are followed by long-lived vibrational heating effects driven by resonant excitation of the ferroelectric soft mode, as reflected in changes in the c-axis tetragonality. The ultrafast structural characterization described here enables direct comparison with first-principles-based molecular dynamics simulations, with good agreement obtained.

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preprint2015arXiv

Modiffied Schottky emission to explain thickness dependence and slow depolarization in BaTiO$_3$ nanowires

We investigate the origin of the depolarization rates in ultrathin adsorbate-stabilized ferroelectric wires. By applying density functional theory calculations and analytic modeling, we demonstrate that the depolarization results from the leakage of charges stored at the surface adsorbates, which play an important role in the polarization stabilization. The depolarization speed varies with thickness and temperature, following several complex trends. A comprehensive physical model is presented, in which quantum tunneling, Schottky emission and temperature dependent electron mobility are taken into consideration. This model simulates experimental results, validating the physical mechanism. We also expect that this improved tunneling-Schottky emission model could be applied to predict the retention time of polarization and the leakage current for various ferroelectric materials with different thicknesses and temperatures.

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preprint2010arXiv

Epitaxial graphene on SiC(0001): More than just honeycombs

The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of graphene, with wafer-size epitaxial graphene on SiC(0001) now possible. Despite this recent progress, the exact nature of the graphene-SiC interface and whether the graphene even has a semiconducting gap remain controversial. Using scanning tunneling microscopy with functionalized tips and density functional theory calculations, here we show that the interface is a warped carbon sheet consisting of three-fold hexagon-pentagon-heptagon complexes periodically inserted into the honeycomb lattice. These defects relieve the strain between the graphene layer and the SiC substrate, while still retaining the three-fold coordination for each carbon atom. Moreover, these defects break the six-fold symmetry of the honeycomb, thereby naturally inducing a gap: the calculated band structure of the interface is semiconducting and there are two localized states near K below the Fermi level, explaining the photoemission and carbon core-level data. Nonlinear dispersion and a 33 meV gap are found at the Dirac point for the next layer of graphene, providing insights into the debate over the origin of the gap in epitaxial graphene on SiC(0001). These results indicate that the interface of the epitaxial graphene on SiC(0001) is more than a dead buffer layer, but actively impacts the physical and electronic properties of the subsequent graphene layers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Signal processing of acoustic signals in the time domain with an active nonlinear nonlocal cochlear model

A two space dimensional active nonlinear nonlocal cochlear model is formulated in the time domain to capture nonlinear hearing effects such as compression, multi-tone suppression and difference tones. The micromechanics of the basilar membrane (BM) are incorporated to model active cochlear properties. An active gain parameter is constructed in the form of a nonlinear nonlocal functional of BM displacement. The model is discretized with a boundary integral method and numerically solved using an iterative second order accurate finite difference scheme. A block matrix structure of the discrete system is exploited to simplify the numerics with no loss of accuracy. Model responses to multiple frequency stimuli are shown in agreement with hearing experiments. A nonlinear spectrum is computed from the model, and compared with FFT spectrum for noisy tonal inputs. The discretized model is efficient and accurate, and can serve as a useful auditory signal processing tool.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Global and local critical current density in superconducting SmFeAsO$_{1-x}$F$_x$ measured by two methods

The critical current densities of polycrystalline bulk SmFeAsO$_{1-x}$F$_x$ prepared by the powder-in-tube (PIT) method and by a conventional solid-state reaction were investigated using the remnant magnetic moment method and Campbell's method. Two types of shielding current, corresponding to global and local critical current densities $J_{\rm c}$ were observed using both measurement methods. The global and local $J_{\rm c}$ were on the order of $10^7$ A/m$^2$ and $10^{10}$ A/m$^2$ at 5 K, respectively. The local $J_{\rm c}$ decreased slightly with increasing magnetic field. The global $J_{\rm c}$ was independent of the preparation method, while the local $J_{\rm c}$ was larger for samples prepared by PIT than for those prepared by solid-state reaction.

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