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Researcher profile

Y. M. Xiong

Y. M. Xiong contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

10 published item(s)

preprint2013arXiv

Ferromagnetic Quantum Critical Point in FeGa3 Tuned by Mixed-Valence Fe Dimers

The magnetic, transport, and thermal properties of single crystals of the series Fe(Ga1-xGex)3 are reported. Pure FeGa3 is a nonmagnetic semiconductor, that when doped with small concentrations of Ge (extrinsic electrons), passes through an insulator-to-metal transition and displays non-Fermi liquid (NFL) behavior. Moreover, we observer clear signatures of a ferromagnetic quantum critical point (FM-QCP) in this system at x = 0.052. The mechanism of the local moment formation is consistent with a one-electron reduction of Fe dimer singlets, a unique structural feature in FeGa3, where the density of these mixed valence (Fe(III)-Fe(II)) dimers provides a unique tuning parameter of quantum criticality.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Superconducting and Critical Current Properties of NiBi3 Thin Films on Carbon Microfibers and Sapphire

The superconducting and critical current properties of thin films of NiBi3 formed on the surface of carbon microfibers and sapphire substrates are reported. The NiBi3 coated carbon microfibers were prepared by reacting 7 μm diameter Ni-coated (~ 80 nm) carbon fibers with Bi vapor, and thin films on sapphire were formed by exposing electron-beam deposited Ni films (~ 40 - 120 nm) to Bi vapor. The microfibers and films show Tc = 4.3 K and 4.4 K,respectively, which were slightly higher than that reported for bulk polycrystalline NiBi3. The critical current density (Jc) was measured below the transition temperature and is well described by the Ginzburg-Landau power-law.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3

Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K)~400 μV/K), but the thermoelectric Figure of merit (ZT(290K) = 0.007) is small because of high electrical resistivity and thermal conductivity (κ(290 K) ~ 2.0 W/m K). IrIn3 is a metal with low thermopower at room temperature (S(290K)~20 μV/K) . Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power factor and corresponding Figure of merit (ZT(380 K) = 0.053), improving the efficiency of the material by an over of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films

We present a study of the proximity effect between a ferromagnet and a paramagnetic metal of varying disorder. Thin beryllium films are deposited onto a 5 nm-thick layer of the ferromagnetic insulator EuS. This bilayer arrangement induces an exchange field, $H_{ex}$, of a few tesla in low resistance Be films with sheet resistance $R\ll R_Q$, where $R_Q=h/e^2$ is the quantum resistance. We show that $H_{ex}$ survives in very high resistance films and, in fact, appears to be relatively insensitive to the Be disorder. We exploit this fact to produce a giant low-field magnetoresistance in the correlated insulator phase of Be films with $R\gg R_Q$.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Effect of Chemical Doping on the Thermoelectric Properties of FeGa3

Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and, a large n-type Seebeck coefficient (S ~ -400 μV/K) at room temperature. Hall effect measurements indicate that chemical doping significantly increases the carrier density, resulting in a metallic state, while the Seebeck coefficient still remains fairly large (~ -150 μV/K). The largest power factor (S2/ρ = 62 μW/m K2) and corresponding figure of merit (ZT = 0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Mystery of Excess Low Energy States in a Disordered Superconductor in a Zeeman Field

Tunneling density of states measurements of disordered superconducting (SC) Al films in high Zeeman fields reveal a significant population of subgap states which cannot be explained by standard BCS theory. We provide a natural explanation of these excess states in terms of a novel disordered Larkin-Ovchinnikov (dLO) phase that occurs near the spin-paramagnetic transition at the Chandrasekhar-Clogston critical field. The dLO superconductor is characterized by a pairing amplitude that changes sign at domain walls. These domain walls carry magnetization and support Andreev bound states, which lead to distinct spectral signatures at low energy.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin-Resolved Tunneling Studies of the Exchange Field in EuS/Al Bilayers

We use spin-resolved electron tunneling to study the exchange field in the Al component of EuS/Al bilayers, in both the superconducting and normal-state phases of the Al. Contrary to expectation, we show that the exchange field, Hex, is a non-linear function of applied field, even in applied fields that are well beyond the EuS coercive field. Furthermore the magnitude Hex is unaffected by the superconducting phase. In addition, Hex decreases significantly with increasing temperature in the temperature range of 0.1-1 K. We discuss these results in the context of recent theories of generalized spin-dependent boundary conditions at a superconductor/ferromagnet interface.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Structural and Physical Properties of CaFe4As3 Single Crystals

We report the synthesis, and structural and physical properties of CaFe4As3 single crystals. Needle-like single crystals of CaFe4As3 were grown out of Sn flux and the compound adopts an orthorhombic structure as determined by X-ray diffraction measurements. Electrical, magnetic, and thermal properties indicate that the system undergoes two successive phase transitions occurring at TN1 ~ 90 K and TN2 ~ 26 K. At TN1, electrical resistivities (ρ(b) and ρ(ac)) are enhanced while magnetic susceptibilities (χ(b) and χ(ac)) are reduced in both directions parallel and perpendicular to the b-axis, consistent with the scenario of antiferromagnetic spin-density-wave formation. At TN2, specific heat reveals a slope change, and χ(ac) decreases sharply but χ(b) has a clear jump before it decreases again with decreasing temperature. Remarkably, both ρ(b) and ρ(ac) decrease sharply with thermal hysteresis, indicating the first-order nature of the phase transition at TN2. At low temperatures, ρ(b) and ρ(ac) can be described by ρ = ρ0 + AT^α(ρ0, A, and α are constants). Interestingly, these constants vary with applied magnetic field. The ground state of CaFe4As3 is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Saturation of the Anomalous Hall Effect in Critically Disordered Ultra-thin CNi3 Films

We demonstrate that a distinct high-disorder anomalous Hall effect phase emerges at the correlated insulator threshold of ultra-thin, amorphous, ferromagnetic CNi3 films. In the weak localization regime, where the sheet conductance G >> e^2/h, the anomalous Hall resistance of the films increases with increasing disorder and the Hall conductance scales as Gxy ~ G^1.6. However, at sufficiently high disorder the system begins to enter the 2D correlated insulator regime, at which point the Hall resistance Rxy abruptly saturates and the scaling exponent becomes 2. Tunneling measurements show that the saturation behavior is commensurate with the emergence of the 2D Coulomb gap, suggesting that e-e interactions mediate the high-disorder phase.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Structure and physical properties of the noncentrosymmetric superconductor Mo3Al2C

We have synthesized polycrystalline samples of the noncentrosymmetric superconductor Mo3Al2C by arc and RF melting, measured its transport, magnetic and thermodynamic properties, and computed its band structure. Experimental results indicate a bulk superconducting transition at Tc ~ 9.2 K, while the density of states at the Fermi surface is found to be dominated by Mo d-orbitals. Using the measured values for the lower critical field Hc1, upper critical field Hc2, and the specific heat C, we estimated the thermodynamic critical field Hc(0), coherence length ξ(0), penetration depth λ(0), and the Ginzburg-Landau parameter κ(0). The specific heat jump at Tc, ΔC/γTc = 2.14, suggests that Mo3Al2C is moderately-to-strongly coupled, consistent with the fast opening of the gap, as evidenced by the rapid release of entropy below Tc from our electronic specific heat measurements. Above 2K the electronic specific heat exhibits the power law behavior, suggesting that synthesis of single crystals and measurements at lower temperature are needed to establish whether the gap is anisotropic. The estimated value of the upper critical field Hc2(0) is close to the calculated Pauli limit, therefore further studies are needed to determine whether the absence of an inversion center results in a significant admixture of the triplet component of the order parameter.

0 citations0 reviewsNo code linkedOpen access