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Y. Kushnirenko

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2020arXiv

Experimental Evidence of Stable 2 $H$ Phase on the Surface of Layered 1 $T'$ -TaTe $_2$

We report on the low-energy electronic structure of Tantalum ditelluride (1 $T'$ -TaTe $_2$ ), one of the charge density wave (CDW) materials from the group V transition metal dichalcogenides using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that the Fermi surface topology of TaTe $_2$ is quite complicated compared to its isovalent compounds such as TaS $_2$ , TaSe $_2$ , and isostructural compound NbTe $_2$ . More importantly, we discover that the surface electronic structure of 1 $T'$ -TaTe $_2$ has more resemblance to the 2 $H$ -TaTe $_2$ , while the bulk electronic structure has more resemblance to the hypothetical 1 $T$ -TaTe $_2$ . These experimental observations are thoroughly compared with our DFT calculations performed on 1 $T$ -, 2 $H$ - and 2 $H$ (monolayer)/1 $T$ - TaTe $_2$ . We further notice that the Fermi surface topology is temperature independent up to 180 K, confirming that the 2 $H$ phase on the surface is stable up to 180 K and the CDW order is not due to the Fermi surface nesting.

preprint2019arXiv

Electronic Structure Studies of FeSi: A Chiral Topological System

Most recent observation of topological Fermi arcs on the surface of manyfold degenerate B20 systems, CoSi and RhSi, have attracted enormous research interests. Although an another isostructural system, FeSi, has been predicted to show bulk chiral fermions, it is yet to be clear theoretically and as well experimentally that whether FeSi possesses the topological surface Fermi arcs associated with the exotic chiral fermions in vicinity of the Fermi level. In this contribution, using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), we present the low-energy electronic structure of FeSi. We further report the surface state calculations to provide insights into the surface band structure of FeSi near the Fermi level. Unlike in CoSi or RhSi, FeSi has no topological Fermi arcs near the Fermi level as confirmed both from ARPES and surface state calculations. Further, the ARPES data show spin-orbit coupling (SOC) band splitting of 40 meV, which is in good agreement with bulk band structure calculations. We noticed an anomalous temperature dependent resistivity in FeSi which can be understood through the electron-phonon interactions as we find a Debye energy of 80 meV from the ARPES data.

preprint2019arXiv

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX $_2$ (X = Se and Te)

Using angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations we studied the low-energy electronic structure of bulk ZrTe $_2$ . ARPES studies on ZrTe $_2$ demonstrate free charge carriers at the Fermi level, which is further confirmed by the DFT calculations. An equal number of hole and electron carrier density estimated from the ARPES data, points ZrTe $_2$ to a semimetal. The DFT calculations further suggest a band inversion between Te $p$ and Zr $d$ states at the $Γ$ point, hinting at the non-trivial band topology in ZrTe $_2$ . Thus, our studies for the first time unambiguously demonstrate that ZrTe $_2$ is a topological semimetal. Also, a comparative band structure study is done on ZrSe $_2$ which shows a semiconducting nature of the electronic structure with an indirect band gap of 0.9 eV between $Γ(A)$ and $M (L)$ high symmetry points. In the below we show that the metal-chalcogen bond-length plays a critical role in the electronic phase transition from semiconductor to a topological semimetal ingoing from ZrSe $_2$ to ZrTe $_2$ .

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Y. Kushnirenko

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3 publications

Experimental Evidence of Stable 2 $H$ Phase on the Surface of Layered 1 $T'$ -TaTe $_2$

Electronic Structure Studies of FeSi: A Chiral Topological System

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX $_2$ (X = Se and Te)

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Y. Kushnirenko

Research overview

Is this your work?

3 publications

Experimental Evidence of Stable 2HHH Phase on the Surface of Layered 1T′T'T′-TaTe2_22​

Electronic Structure Studies of FeSi: A Chiral Topological System

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX2_22​ (X = Se and Te)

See the researcher in context

Building this map preview

Experimental Evidence of Stable 2 $H$ Phase on the Surface of Layered 1 $T'$ -TaTe $_2$

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX $_2$ (X = Se and Te)