Researcher profile

S. Thirupathaiah

S. Thirupathaiah contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2021arXiv

Observation of Exchange Bias in Antiferromagnetic Cr$_{0.79}$Se due to the Coexistence of Itinerant Weak Ferromagnetism at Low-temperatures

We report on the structural, electrical transport, and magnetic properties of antiferromagnetic transition-metal monochalcogenide Cr$_{0.79}$Se. Different from the existing off-stoichiometric compositions, Cr$_{0.79}$Se is found to be synthesised into the same NiAs-type hexagonal crystal structure of CrSe. Resistivity data suggest Cr$_{0.79}$Se to be a Fermi-liquid-type metal at low temperatures, while at intermediate temperatures the resistivity depends sublinearly on the temperature. Eventually, at the elevated temperatures the rate of change of resistivity rapidly decreases with increasing temperature. Magnetic measurements suggest a transition from paramagnetic phase to an antiferromagnetic phase at a N$\acute{e}$el temperature of 225 K. Further reduction of the sample temperature results into coexistance of weak ferromagnetism along with the antiferromagnetic phase below 100 K. As a result, below 100 K, we identify significant exchange bias due to the interaction between the ferro- and antiferromagnetic phases. In addition, from the temperature dependent X-ray diffraction measurements we observe that the NiAs-type structure is stable up to as high as 600$^o$C.

preprint2021arXiv

Sixfold fermion near the Fermi level in cubic PtBi2

We show that the cubic compound PtBi2, is a topological semimetal hosting a sixfold band touching point in close proximity to the Fermi level. Using angle-resolved photoemission spectroscopy, we map the bandstructure of the system, which is in good agreement with results from density functional theory. Further, by employing a low energy effective Hamiltonian valid close to the crossing point, we study the effect of a magnetic field on the sixfold fermion. The latter splits into a total of twenty Weyl cones for a Zeeman field oriented in the diagonal, [111] direction. Our results mark cubic PtBi2, as an ideal candidate to study the transport properties of gapless topological systems beyond Dirac and Weyl semimetals.

preprint2020arXiv

Experimental Evidence of Stable 2$H$ Phase on the Surface of Layered 1$T'$-TaTe$_2$

We report on the low-energy electronic structure of Tantalum ditelluride (1$T'$-TaTe$_2$), one of the charge density wave (CDW) materials from the group V transition metal dichalcogenides using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that the Fermi surface topology of TaTe$_2$ is quite complicated compared to its isovalent compounds such as TaS$_2$, TaSe$_2$, and isostructural compound NbTe$_2$. More importantly, we discover that the surface electronic structure of 1$T'$-TaTe$_2$ has more resemblance to the 2$H$-TaTe$_2$, while the bulk electronic structure has more resemblance to the hypothetical 1$T$-TaTe$_2$. These experimental observations are thoroughly compared with our DFT calculations performed on 1$T$-, 2$H$- and 2$H$ (monolayer)/1$T$- TaTe$_2$. We further notice that the Fermi surface topology is temperature independent up to 180 K, confirming that the 2$H$ phase on the surface is stable up to 180 K and the CDW order is not due to the Fermi surface nesting.

preprint2019arXiv

Electronic Structure Studies of FeSi: A Chiral Topological System

Most recent observation of topological Fermi arcs on the surface of manyfold degenerate B20 systems, CoSi and RhSi, have attracted enormous research interests. Although an another isostructural system, FeSi, has been predicted to show bulk chiral fermions, it is yet to be clear theoretically and as well experimentally that whether FeSi possesses the topological surface Fermi arcs associated with the exotic chiral fermions in vicinity of the Fermi level. In this contribution, using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), we present the low-energy electronic structure of FeSi. We further report the surface state calculations to provide insights into the surface band structure of FeSi near the Fermi level. Unlike in CoSi or RhSi, FeSi has no topological Fermi arcs near the Fermi level as confirmed both from ARPES and surface state calculations. Further, the ARPES data show spin-orbit coupling (SOC) band splitting of 40 meV, which is in good agreement with bulk band structure calculations. We noticed an anomalous temperature dependent resistivity in FeSi which can be understood through the electron-phonon interactions as we find a Debye energy of 80 meV from the ARPES data.

preprint2019arXiv

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX$_2$ (X = Se and Te)

Using angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations we studied the low-energy electronic structure of bulk ZrTe$_2$. ARPES studies on ZrTe$_2$ demonstrate free charge carriers at the Fermi level, which is further confirmed by the DFT calculations. An equal number of hole and electron carrier density estimated from the ARPES data, points ZrTe$_2$ to a semimetal. The DFT calculations further suggest a band inversion between Te $p$ and Zr $d$ states at the $Γ$ point, hinting at the non-trivial band topology in ZrTe$_2$. Thus, our studies for the first time unambiguously demonstrate that ZrTe$_2$ is a topological semimetal. Also, a comparative band structure study is done on ZrSe$_2$ which shows a semiconducting nature of the electronic structure with an indirect band gap of 0.9 eV between $Γ(A) $ and $M (L)$ high symmetry points. In the below we show that the metal-chalcogen bond-length plays a critical role in the electronic phase transition from semiconductor to a topological semimetal ingoing from ZrSe$_2$ to ZrTe$_2$.