Researcher profile

Y. Klein

Y. Klein contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Dichroism in time-resolved ARPES and valence band orbital nature in BaNiS2

Time-resolved ARPES gives access to the band structure and ultrafast dynamics of excited electronic states in solids. The orbital character of the bands close to the Fermi level is essential to understand the origin of several exotic phenomena in quantum materials. By performing polarization dependent time- and angle-resolved photoemission spectroscopy and by analyzing the chirality of the photoelectron yield for two different crystal orientations, we identify the orbital character of bands below and above the chemical potential for the Dirac semimetal BaNiS2. Our results illustrate how the control and understanding of matrix elements effects in time-resolved photoemission spectroscopy can be a powerful tool for the study of quantum materials.

preprint2021arXiv

Chemical element mapping by x-ray ghost fluorescence

Chemical element mapping is an imaging tool that provides essential information on composite materials and it is crucial for a broad range of fields ranging from fundamental science to numerous applications. Methods that exploit x-ray fluorescence are very advantageous and are widely used, but require focusing of the input beam and raster scanning of the sample. Thus the methods are slow and exhibit limited resolution due to focusing challenges. We demonstrate a new focusing free x-ray fluorescence method based ghost imaging that overcomes those limitations. We combine our procedure with compressed sensing to reduce the measurement time and the exposure to radiation by more than 80%. Since our method does not require focusing, it opens the possibility for improving the resolution and image quality of chemical element maps with tabletop x-ray sources and for extending the applicability of x-ray fluorescence detection to new fields such as medical imaging and homeland security applications

preprint2020arXiv

Growth facets of SrIrO3 Thin Films and Single Crystals

The crystallographic orientation of SrIrO3 surfaces is decisive for the occurrence of topological surface states. We show from DFT computations that (001) and (110) free surfaces have comparable energies, and, correspondingly, we experimentally observe that single micro-crystals exhibit both facet orientations. These surfaces are found to relax over typically the length of one oxygen octahedron, defining a structural critical thickness for thin films. A reconstruction of the electronic density associated to tilts of the oxygen octahedra is observed. On the other hand, thin films have invariably been reported to grow along the (110) direction. We show that the interfacial energy associated to the oxygen octahedra distortion for epitaxy is likely at the origin of this specific feature, and propose leads to induce (001) SrIrO3 growth.

preprint2020arXiv

High-speed x-ray imaging with single-pixel detector

We demonstrate experimentally the ability to use a single pixel detector for two-dimensional high-speed and high-resolution x-ray imaging. We image the rotation of a spinning chopper at 100-kHz at spatial resolution of about 15 microns by using the computational ghost imaging approach. The technique we develop can be used for the imaging of high-speed periodic dynamics or periodically stimulated effects with a large field of view and at low dose.

preprint2010arXiv

High-field metamagnetism in the antiferromagnet CeRh$_2$Si$_2$

A study of the antiferromagnet CeRh$_2$Si$_2$ by torque, magnetostriction, and transport in pulsed magnetic fields up to 50 Tesla and by thermal expansion in static fields up to 13 Tesla is presented. The magnetic field-temperature phase diagram of CeRh$_2$Si$_2$, where the magnetic field is applied along the easy axis $\mathbf{c}$, is deduced from these measurements. The second-order phase transition temperature $T_{N}$ and the first-order phase transition temperature $T_{1,2}$ (=~36 K and 26 K at zero-field, respectively) decrease with increasing field. The field-induced antiferromagnetic-to-paramagnetic borderline $H_c$, which equals 26 T at 1.5 K, goes from first-order at low temperature to second-order at high temperature. The magnetic field-temperature phase diagram is found to be composed of (at least) three different antiferromagnetic phases. These are separated by the first-order lines $H_{1,2}$, corresponding to $T_{1,2}$ at H=0, and $H_{2,3}$, which equals 25.5 T at 1.5 K. A maximum of the $T^2$-coefficient $A$ of the resistivity is observed at the onset of the high-field polarized regime, which is interpreted as the signature of an enhanced effective mass at the field-induced quantum instability. The magnetic field dependence of the $A$ coefficient in CeRh$_2$Si$_2$ is compared with its pressure dependence, and also with the field dependence of $A$ in the prototypal heavy-fermion system CeRu$_2$Si$_2$.