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Y. Jia

Y. Jia contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.supr-con cond-mat.mtrl-sci

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preprint2016arXiv

Tellurene-a monolayer of tellurium from first-principles prediction

A two dimensional (2D) Group-VI Te monolayer, tellurene, is predicted by using the first-principles calculations, which consists of planner four-membered and chair-like six-membered rings arranged alternately in a 2D lattice. The phonon spectra calculations, combined with ab initio molecular dynamics (MD) simulations, demonstrate that tellurene is kinetically very stable. The tellurene shows a desirable direct band gap of 1.04 eV and its band structure can be effectively tuned by strain. The effective mass calculations imply that tellurene should also exhibit a relatively high carrier mobility, e.g. compared with MoS2. The significant direct band gap and the high carrier mobility imply that tellurene is a very promising candidate for a new generation of nanoelectronic devices.

preprint2016arXiv

Toward superconducting critical current by design

We present the new paradigm of critical current by design. Analogous to materials by design, it aims at predicting the optimal defect landscape in a superconductor for targeted applications by elucidating the vortex dynamics responsible for the bulk critical current. To highlight this approach, we demonstrate the synergistic combination of critical current measurements on commercial high-temperature superconductors containing self-assembled and irradiation tailored correlated defects by using large-scale time-dependent Ginzburg-Landau simulations for vortex dynamics.

preprint2013arXiv

Dirac Fermions and Superconductivity in Homologous Structures (AgxPb1-xSe)5(Bi2Se3)3m,m = 1,2

A newly discovered topological insulator (AgxPb1-xSe)5(Bi2Se3)3m, m=2, has a band gap of 0.5 eV, the largest value ever reported in topological insulators (TIs). We present a magnetoconductivity study of the Dirac electrons of this compound in the quantum diffusion regime. Two dimensional weak antilocalization was observed and identified as destructive interference caused by the Berry phase of this topological state. We find that the phase coherence length of the Dirac electrons is independent of doping and disorder levels. This provides proof for the absence of backscattering arising from the protection of time reversal invariance in TI (AgxPb1-xSe)5(Bi2Se3)3m, m=2. We further report that the homologous compound (AgxPb1-xSe)5(Bi2Se3)3m, m=1 is a superconductor with a transition temperature Tc = 1.7 K. The related structures of these two phases allow lateral intergrowth of crystals to occur naturally, offering an opportunity to observe the Majorana Fermion state at the boundary of two intergrown crystals.

preprint2013arXiv

Doubling the Critical Current Density of High Temperature Superconducting Coated Conductors through Proton Irradiation

The in-field critical current of commercial YBa2Cu3O7 coated conductors can be substantially enhanced by post-fabrication irradiation with 4 MeV protons. Irradiation to a fluence of 8x10^16 p/cm^2 induces a near doubling of the critical current in fields of 6 T || c at a temperature of 27 K, a field and temperature range of interest for applications such as rotating machinery. A mixed pinning landscape of preexisting precipitates and twin boundaries and small, finely dispersed irradiation induced defects may account for the improved vortex pinning in high magnetic fields. Our data indicate that there is significant head-room for further enhancements.

preprint2012arXiv

Catalyst-Free Growth of Millimeter-Long Topological Insulator Bi2Se3 Nanoribbons and the Observation of pi Berry Phase

We report the growth of single-crystalline Bi2Se3 nanoribbons with lengths up to several millimeters via a catalyst-free physical vapor deposition method. Scanning transmission electron microscopy analysis reveals that the nanoribbons grow along the (1120) direction. We obtain a detailed characterization of the electronic structure of the Bi2Se3 nanoribbons from measurements of Shubnikov-de Haas (SdH) quantum oscillations. Angular dependent magneto-transport measurements reveal a dominant two-dimensional contribution originating from surface states and weak contribution from the bulk states. The catalyst-free synthesis yields high-purity nanocrystals enabling the observation of a large number of SdH oscillation periods and allowing for an accurate determination of the pi-Berry phase, one of the key features of Dirac fermions in topological insulators. The long-length nanoribbons can empower the potential for fabricating multiple nanoelectronic devices on a single nanoribbon.

preprint2011arXiv

Doping and Irradiation Controlled Vortex Pinning Behavior in BaFe2(As1-xPx)2 Single Crystals

We report on the systematic evolution of vortex pinning behavior in isovalent doped single crystals of BaFe2(As1-xPx)2. Proceeding from optimal doped to ovedoped samples, we find a clear transfor- mation of the magnetization hysteresis from a fishtail behavior to a distinct peak effect followed by a reversible magnetization and Bean Livingston surface barriers. Strong point pinning dominates the vortex behavior at low fields whereas weak collective pinning determines the behavior at higher fields. In addition to doping effects, we show that particle irradiation by energetic protons can tune vortex pinning in these materials.