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Y. -G. Shi

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5 publications

preprint2016arXiv

Compensated semimetal LaSb with unsaturated magnetoresistance

By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance (XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center ΓΓ and one ellipsoidal electron FS at the BZ boundary XX. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but share many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.

preprint2016arXiv

Emergence of topological bands on the surface of ZrSnTe crystal

By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though such a TI state is defined with a curved Fermi level instead of a global band gap. Furthermore, we find that by modifying the dangling bonds on the surface through hydrogenation, this 2D band structure can be manipulated so that the expected global energy gap is most likely to be realized. This facilitates the practical applications of 2D TI in heterostructural devices and those with surface decoration and coverage. Since ZrSnTe belongs to a large family of compounds having the similar crystal and band structures, our findings shed light on identifying more 2D TI candidates and superconductor-TI heterojunctions supporting topological superconductors.

preprint2016arXiv

New phase transition in Na2_{2}Ti2_{2}As2_{2}O revealed by Raman scattering

We performed a Raman scattering study of Na2_2Ti2_2As2_2O. We identified a symmetry breaking structural transition at around Ts=150T_s = 150 K, which matches a large bump in the electrical resistivity. Several new peaks are detected below that transition. Combined with first-principles calculations, our polarization-dependent measurements suggest a charge instability driven lattice distortion along one of the Ti-O bonds that breaks the 4-fold symmetry and more than doubles the unit cell.

preprint2015arXiv

Observation of Raman active phonon with Fano lineshape in quasi-one-dimensional superconductor K2_2Cr3_3As3_3

We performed a polarized Raman scattering study of quasi-one-dimensional superconductor K2_2Cr3_3As3_3. We detect two A1′_1^\prime phonons and three E′^\prime phonons. One of the A1′_1^\prime modes exhibits a nearly temperature-independent Fano lineshape. Based on our first-principles calculations, we ascribe this mode to the in-phase vibrations of Cr atoms within one layer. This observation strongly suggests that the magnetic fluctuations in K2_2Cr3_3As3_3 are coupled to the electronic structure \emph{via} the lattice.

preprint2015arXiv

Raman scattering investigation of large positive magnetoresistance material WTe2_2

We have performed polarized Raman scattering measurements on WTe2_2, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A1_1 phonon modes and 2 A2_2 phonon modes out of 33 Raman active modes, with frequencies in good accordance with first-principles calculations. The angular dependence of the intensity of the peaks observed is consistent with the Raman tensors of the C2vC_{2v} point group symmetry attributed to WTe2_2. Although the phonon spectra suggest neither strong electron-phonon nor spin-phonon coupling, the intensity of the A1_1 phonon mode at 160.6 cm−1^{-1} shows an unconventional decrease with temperature decreasing, for which the origin remains unclear.

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