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Researcher profile

B. -B. Fu

B. -B. Fu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-con

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Published work

4 published item(s)

preprint2016arXiv

Compensated semimetal LaSb with unsaturated magnetoresistance

By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance (XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center $Γ$ and one ellipsoidal electron FS at the BZ boundary $X$. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but share many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Emergence of topological bands on the surface of ZrSnTe crystal

By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though such a TI state is defined with a curved Fermi level instead of a global band gap. Furthermore, we find that by modifying the dangling bonds on the surface through hydrogenation, this 2D band structure can be manipulated so that the expected global energy gap is most likely to be realized. This facilitates the practical applications of 2D TI in heterostructural devices and those with surface decoration and coverage. Since ZrSnTe belongs to a large family of compounds having the similar crystal and band structures, our findings shed light on identifying more 2D TI candidates and superconductor-TI heterojunctions supporting topological superconductors.

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preprint2016arXiv

Experimental evidence of large-gap two-dimensional topological insulator on the surface of ZrTe5

Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap 2D TI candidates, only few of them have been experimentally verified. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that the top monolayer of ZrTe5 crystals hosts a large band gap of ~100 meV on the surface and a finite constant density-of-states within the gap at the step edge. Our first-principles calculations confirm the topologically nontrivial nature of the edge states. These results demonstrate that the top monolayer of ZrTe5 crystals is a large-gap 2D TI suitable for topotronic applications at high temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of high-Tc superconductivity in rectangular FeSe/STO(110) monolayer

It is well known that superconductivity in Fe-based materials is favoured under tetragonal symmetry, whereas competing orders such as spin-density-wave (SDW) and nematic orders emerge or are reinforced upon breaking the fourfold (C4) symmetry. Accordingly, suppression of orthorhombicity below the superconducting transition temperature (Tc) is found in underdoped compounds. Epitaxial film growth on selected substrates allows the design of crystal specific lattice distortions. Here we show that despite the breakdown of the C4 symmetry induced by a 5% difference in the lattice parameters, monolayers of FeSe grown by molecular beam epitaxy (MBE) on the (110) surface of SrTiO3 (STO) substrates [FeSe/STO(110)] exhibit a large nearly isotropic superconducting (SC) gap of 16 meV closing around 60 K. Our results on this new interfacial material, similar to those obtained previously on FeSe/STO(001), contradict the common belief that the C4 symmetry is essential for reaching high Tc's in Fe-based superconductors.

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