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Y. Du

Y. Du appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elOther Computer Science

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Published work

10 published item(s)

preprint2016arXiv

Overview of Spintronic Sensors, Internet of Things, and Smart Living

Smart living is a trending lifestyle that envisions lower energy consumption, sound public services, and better quality of life for human being. The Internet of Things (IoT) is a compelling platform connecting various sensors around us to the Internet, providing great opportunities for the realization of smart living. Spintronic sensors with superb measuring ability and multiple unique advantages can be an important piece of cornerstone for IoT. In this review, we discuss successful applications of spintronic sensors in electrical current sensing, transmission and distribution lines monitoring, vehicle detection, and biodetection. Traditional monitoring systems with limited sensors and wired communication can merely collect fragmented data in the application domains. In this paper, the wireless spintronic sensor networks (WSSNs) will be proposed and illustrated to provide pervasive monitoring systems, which facilitate the intelligent surveillance and management over building, power grid, transport, and healthcare. The database of collected information will be of great use to the policy making in public services and city planning. This work provides insights for realizing smart living through the integration of IoT with spintronic sensor technology.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hole-induced insulator-to-metal transition in La1-xSrxCrO3 epitaxial films

We have investigated the evolution of the electronic properties of La1-xSrxCrO3 (for the full range of x) epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x-ray photoemission spectroscopy, Rutherford backscattering spectrometry, x-ray absorption spectroscopy, electrical transport, and ab initio modeling. LaCrO3 is an antiferromagnetic insulator whereas SrCrO3 is a metal. Substituting Sr2+ for La3+ in LaCrO3 effectively dopes holes into the top of valence band, leading to Cr4+ (3d2) local electron configurations. Core-level and valence-band features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence band maximum. The material becomes a p-type semiconductor at lower doping levels and an insulator-to-metal transition is observed at x greater than or equal to 0.65, but only when the films are deposited with in-plane compression via lattice-mismatched heteroepitaxy. Valence band x-ray photoemission spectroscopy reveals diminution of electronic state density at the Cr 3d t2g-derived top of the valence band while O K-edge x-ray absorption spectroscopy shows the development of a new unoccupied state above the Fermi level as holes are doped into LaCrO3. The evolution of these bands with Sr concentration is accurately captured using density functional theory with a Hubbard U correction of 3.0 eV (DFT + U). Resistivity data in the semiconducting regime (x less than or equal to 0.50) do not fit perfectly well to either a polaron hopping or band conduction model, but are best interpreted in terms of a hybrid model. The activation energies extracted from these fits are well reproduced by DFT + U.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Self-corrected sensors based on atomic absorption spectroscopy for atom flux measurements in molecular beam epitaxy

A high sensitivity atom flux sensor based on atomic absorption spectroscopy has been designed and implemented to control electron beam evaporators and effusion cells in a molecular beam epitaxy system. Using a high-resolution spectrometer and a two-dimensional charge coupled device detector in a double-beam configuration, we employ either a non-resonant line or a resonant line with low cross section from the same hollow cathode lamp as the reference for nearly perfect background correction and baseline drift removal. This setup also significantly shortens the warm-up time needed compared to other sensor technologies and drastically reduces the noise coming from the surrounding environment. In addition, the high-resolution spectrometer allows the most sensitive resonant line to be isolated and used to provide excellent signal-to-noise ratio.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A new class of topological insulators from I-III-IV half-Heusler compounds with strong band inversion strength

In this paper, by first principle calculations, we investigate systematically the band topology of a new half-Heusler family with composition of I(A)-III(A)-IV(A). The results clearly show that many of the I-III-IV half-Heusler compounds are in fact promising to be topological insulator candidates. The characteristic feature of these new topological insulators is the naturally strong band inversion strength (up to -2eV) without containing heavy elements. Moreover, we found that both the band inversion strength and the topological insulating gap can be tailored through strain engineering, and therefore would be grown epitaxially in the form of films, and useful in spintronics and other applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A New Spin Gapless Semiconductors Family: Quaternary Heusler Compounds

Using first-principles calculations, we investigate the band structures of a series of quaternary LiMgPdSn-type Heusler compounds. Our calculation results show that five compounds CoFeMnSi, CoFeCrAl, CoMnCrSi, CoFeVSi and FeMnCrSb possess unique electronic structures characterized by a half-metallic gap in one spin direction while a zero-width gap in the other spin direction showing spin gapless semiconducting behavior. We further analysis the electronic and magnetic properties of all quaternary Heusler alloys involved, and reveal a semi-empirical general rule (total valence electrons number being 26 or 28) for indentifying spin gapless semiconductors in Heusler compounds. The influences of lattice distortion and main-group element change have also been discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi

This work reports on the band structure and magneto-transport investigations of the inverse Heusler compound Fe2CoSi. The first-principles calculations reveal that Fe2CoSi has a very peculiar band structure with a conducting property in the majority spin channel and a nearly zero bandgap in the minority spin channel. The synthesized Fe2CoSi sample shows a high-ordered inverse Heusler structure with a magnetic moment of 4.88 μB at 5 K and a high Curie temperature of 1038 K. With increasing temperature, a crossover from positive to negative magnetoresistance (MR) is observed. Complemented with the Hall effect measurements, we suggest the intriguing crossover of MR can be ascribed to the dominant spin carriers changing from the gapless minority spin channel to the majority spin channel at Fermi level.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi

In this paper, we investigate the half-metallicity of Heusler alloys Fe2Co1-xCrxSi by first principles calculations and anisotropy magnetoresistance measurements. It is found that, with the increase of Cr content x, the Fermi level of Fe2Co1-xCrxSi moves from the top of valence band to the bottom of conduction band, and a large half-metallic band gap of 0.75 eV is obtained for x=0.75. We then successfully synthesized a series Heusler Fe2Co1-xCrxSi polycrystalline ribbon samples. The results of X-ray diffraction indicate that the Fe2Co1-xCrxSi series of samples are pure phase with a high degree of order and the saturation magnetic moment follows half-metallic Slater-Pauling rule. Except for the two end members, Fe2CoSi and Fe2CrSi, the anisotropic magnetoresistance of Fe2Co1-xCrxSi (x=0.25, 0.5, 0.75) show a negative value suggesting they are stable half-metallic ferromagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Cation nonstoichiometry and its impact on nucleation, structure and defect formation in complex oxide heteroepitaxy : LaCrO3 on SrTiO3(001)

Our ability to design and fabricate electronic devices with reproducible properties using complex oxides is critically dependent on our ability to controllably synthesize these materials in thin-film form. Structure-property relationships are intimately tied to film and interface composition. Here we report on the effects of cation stoichiometry in LaCrO3 heteroepitaxial films prepared using molecular beam epitaxy. We show that LaCrO3 films grow pseudomorphically on SrTiO3(001) over a wide range of La-to-Cr atom ratios. However, the growth mode and structural quality are sensitive to the La-to-Cr ratio, with La-rich films being of considerably lower structural quality than Cr-rich films. Cation mixing occurs at the interface for all La-to-Cr ratios investigated, and is not quenched by deposition at ambient temperature. Indiffused La atoms occupy Sr sites in the substrate. The presence of defects in the SrTiO3 substrate is implicated in promoting La indiffusion by comparing the properties of LaCrO3/SrTiO3 with those of LaCrO3/Si, both prepared at ambient temperature. Additionally, pulsed laser deposition is shown to result in more extensive interfacial mixing than molecular beam epitaxy for deposition at ambient temperature on Si.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Domain Wall Conductivity in Oxygen Deficient Multiferroic YMnO3 Single Crystals

The transport properties of domain walls in oxygen deficient multiferroic YMnO3 single crystals have been probed using conductive atomic force microscopy and piezoresponse force microscopy. Domain walls exhibit significantly enhanced conductance after being poled in electric fields, possibly induced by oxygen vacancy ordering at domain walls. The electronic conduction can be understood by the Schottky emission and Fowler-Nordheim tunnelling mechanisms. Our results show that the domain wall conductance can be modulated through band structure engineering by manipulating ordered oxygen vacancies in the poling fields.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Structure, magnetism and magnetic compensation behavior of Co50-xMn25Ga25+x and Co50-xMn25+xGa25 Heusler alloys

The structure, magnetism, magnetic compensation behavior, exchange interaction and electronic structures of Co50-xMn25Ga25+x and Co50-xMn25+xGa25 (x=0-25) alloys have been systematically investigated by both experiments and first-principles calculations. We found that all the samples exhibited body centered cubic structures with a high degree of atomic ordering. With increasing Ga content, the composition dependence of lattice parameters shows a kink point at the middle composition in Co50-xMn25Ga25+x alloys, which can be attributed to the enhanced covalent effect between the Ga and the transition metals. Furthermore, a complicated magnetic competition has been revealed in Co50-xMn25Ga25+x alloys, which causes the Curie temperature dramatically decrease and results in a magnetic moment compensation behavior. In Co50-xMn25+xGa25 alloys, however, with increasing Mn content, an additional ferrimagnetic configuration was established in the native ferromagnetic matrix, which causes the molecular moment monotonously decreases and the exchange interaction enhances gradually. The electronic structure calculations indicate that the Co50-xMn25+xGa25 alloys are likely to be in a coexistence state of the itinerant and localized magnetism. Our study will be helpful to understand the nature of magnetic ordering as well as to tune magnetic compensation and electronic properties of Heusler alloys.

0 citations0 reviewsNo code linkedOpen access