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G. Z. Xu

G. Z. Xu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

8 published item(s)

preprint2020arXiv

Single-photon linear polarimeter based on a superconducting nanowire array

Superconducting nanowire single-photon detectors (SNSPDs) have attracted remarkable interest for visible and near infrared single-photon detection, owing to their outstanding performance. Conventional SNSPDs are generally used as binary photon-counting detector. Another important characteristic of light, i.e., polarization, has not been resolved using standalone SNSPDs. In this work, we simulated, fabricated, and characterized a linear polarimeter based on a four-pixel NbN superconducting nanowire array, capable of resolving the polarization state of linearly polarized light at the single-photon level. The detector array design is based on a division of focal plane sensor, in which the orientation of each nanowire division (pixel) is offset by 45 degree. Each single nanowire pixel operates as a combination of photon detector and almost linear polarization filter, with an average polarization extinction ratio of approximately 10. The total system detection efficiency with four pixels is approximately 1% at a total dark count rate of 680 cps, when the detector array is free-space coupled and illuminated with 1550 nm photons. The Stokes parameters are extracted from polarization measurements of the four pixels. The mean errors of the measured AoP and DoLP were about -3 degree and 0.12, respectively. Our results indicate that it is possible to develop a scalable polarization polarimeter or imager based on a superconducting nanowire array. This detector array may find promising application in single-photon polarization detection and imaging.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

New spin injection scheme based on spin gapless semiconductors: A first-principles study

Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin gapless semiconductors can significantly reduce the conductive mismatch to enhance spin injection efficiency. By performing first principles calculations based on superlattice structure, we have studied the representative system of Mn2CoAl/semiconductor spin injector scheme. The results showed that a high spin polarization was maintained at the interface in systems of Mn2CoAl/Fe2VAl constructed with (100) interface and Mn2CoAl/GaAs with (110) interface, and the latter is expected to possess long spin diffusion length. Inherited from the spin gapless feature of Mn2CoAl, a pronounced dip was observed around the Fermi level in the majority-spin density-of-states in both systems, suggesting fast transport of the low-density carriers.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin injection based on the spin gapless semiconductor(SGS)/semiconductor heterostructures

Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin gapless semiconductors can significantly reduce the conductive mismatch while conserve high spin polarization. By performing first principles calculations based on superlattice structure, we have studied the representative system of Mn2CoAl/semiconductor spin injector scheme. The results showed that high spin polarization were maintained at the interface in systems of Mn2CoAl/Fe2VAl constructed with (100) interface and Mn2CoAl/GaAs with (110) interface, and the latter is expected to possess long spin diffusion length. Inherited from the spin gapless feature of Mn2CoAl, a pronounced dip was observed around the Fermi level in the majority-spin DOS in both systems, suggesting fast transport of the low-density carriers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A new class of topological insulators from I-III-IV half-Heusler compounds with strong band inversion strength

In this paper, by first principle calculations, we investigate systematically the band topology of a new half-Heusler family with composition of I(A)-III(A)-IV(A). The results clearly show that many of the I-III-IV half-Heusler compounds are in fact promising to be topological insulator candidates. The characteristic feature of these new topological insulators is the naturally strong band inversion strength (up to -2eV) without containing heavy elements. Moreover, we found that both the band inversion strength and the topological insulating gap can be tailored through strain engineering, and therefore would be grown epitaxially in the form of films, and useful in spintronics and other applications.

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preprint2013arXiv

A New Spin Gapless Semiconductors Family: Quaternary Heusler Compounds

Using first-principles calculations, we investigate the band structures of a series of quaternary LiMgPdSn-type Heusler compounds. Our calculation results show that five compounds CoFeMnSi, CoFeCrAl, CoMnCrSi, CoFeVSi and FeMnCrSb possess unique electronic structures characterized by a half-metallic gap in one spin direction while a zero-width gap in the other spin direction showing spin gapless semiconducting behavior. We further analysis the electronic and magnetic properties of all quaternary Heusler alloys involved, and reveal a semi-empirical general rule (total valence electrons number being 26 or 28) for indentifying spin gapless semiconductors in Heusler compounds. The influences of lattice distortion and main-group element change have also been discussed.

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preprint2013arXiv

Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi

This work reports on the band structure and magneto-transport investigations of the inverse Heusler compound Fe2CoSi. The first-principles calculations reveal that Fe2CoSi has a very peculiar band structure with a conducting property in the majority spin channel and a nearly zero bandgap in the minority spin channel. The synthesized Fe2CoSi sample shows a high-ordered inverse Heusler structure with a magnetic moment of 4.88 μB at 5 K and a high Curie temperature of 1038 K. With increasing temperature, a crossover from positive to negative magnetoresistance (MR) is observed. Complemented with the Hall effect measurements, we suggest the intriguing crossover of MR can be ascribed to the dominant spin carriers changing from the gapless minority spin channel to the majority spin channel at Fermi level.

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preprint2013arXiv

Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases. In the window, a first-order magnetostructural transition between paramagnetic austenite and ferromagnetic martensite occurs with a sharp jump in magnetization, showing a magnetic entropy change as large as -40 J kg-1 K-1 in a 50 kOe field change. This giant magnetocaloric effect enables Mn1-xCoxNiGe to become a potential magnetic refrigerant.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi

In this paper, we investigate the half-metallicity of Heusler alloys Fe2Co1-xCrxSi by first principles calculations and anisotropy magnetoresistance measurements. It is found that, with the increase of Cr content x, the Fermi level of Fe2Co1-xCrxSi moves from the top of valence band to the bottom of conduction band, and a large half-metallic band gap of 0.75 eV is obtained for x=0.75. We then successfully synthesized a series Heusler Fe2Co1-xCrxSi polycrystalline ribbon samples. The results of X-ray diffraction indicate that the Fe2Co1-xCrxSi series of samples are pure phase with a high degree of order and the saturation magnetic moment follows half-metallic Slater-Pauling rule. Except for the two end members, Fe2CoSi and Fe2CrSi, the anisotropic magnetoresistance of Fe2Co1-xCrxSi (x=0.25, 0.5, 0.75) show a negative value suggesting they are stable half-metallic ferromagnets.

0 citations0 reviewsNo code linkedOpen access