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Researcher profile

Y. Allkofer

Y. Allkofer contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-detastro-ph.IMhep-ex

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Published work

3 published item(s)

preprint2012arXiv

Study of nuclear recoils in liquid argon with monoenergetic neutrons

For the development of liquid argon dark matter detectors we assembled a setup in the laboratory to scatter neutrons on a small liquid argon target. The neutrons are produced mono-energetically (E_kin=2.45 MeV) by nuclear fusion in a deuterium plasma and are collimated onto a 3" liquid argon cell operating in single-phase mode (zero electric field). Organic liquid scintillators are used to tag scattered neutrons and to provide a time-of-flight measurement. The setup is designed to study light pulse shapes and scintillation yields from nuclear and electronic recoils as well as from α-particles at working points relevant to dark matter searches. Liquid argon offers the possibility to scrutinise scintillation yields in noble liquids with respect to the populations of the two fundamental excimer states. Here we present experimental methods and first results from recent data towards such studies.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Evidence for $πK$-atoms with DIRAC

We present evidence for the first observation of electromagnetically bound $π^\pm K^\mp$-pairs ($πK$-atoms) with the DIRAC experiment at the CERN-PS. The $πK$-atoms are produced by the 24 GeV/c proton beam in a thin Pt-target and the $π^\pm$ and $K^\mp$-mesons from the atom dissociation are analyzed in a two-arm magnetic spectrometer. The observed enhancement at low relative momentum corresponds to the production of 173 $\pm$ 54 $πK$-atoms. The mean life of $πK$-atoms is related to the s-wave $πK$-scattering lengths, the measurement of which is the goal of the experiment. From these first data we derive a lower limit for the mean life of 0.8 fs at 90% confidence level.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Simulation of Heavily Irradiated Silicon Pixel Detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.

0 citations0 reviewsNo code linkedOpen access