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Xuemei Cheng

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5 publications

preprint2016arXiv

On the Structural Origin of the Single-ion Magnetic Anisotropy in LuFeO3

Electronic structures for the conduction bands of both hexagonal and orthorhombic LuFeO3 thin films have been measured using x-ray absorption spectroscopy at oxygen K (O K) edge. Dramatic differences in both the spectra shape and the linear dichroism are observed. These differences in the spectra can be explained using the differences in crystal field splitting of the metal (Fe and Lu) electronic states and the differences in O 2p-Fe 3d and O 2p-Lu 5d hybridizations. While the oxidation states has not changed, the spectra are sensitive to the changes in the local environments of the Fe3+ and Lu3+ sites in the hexagonal and orthorhombic structures. Using the crystal-field splitting and the hybridizations that are extracted from the measured electronic structures and the structural distortion information, we derived the occupancies of the spin minority states in Fe3+, which are non-zero and uneven. The single ion anisotropy on Fe3+ sites is found to originate from these uneven occupancies of the spin minority states via spin-orbit coupling in LuFeO3.

preprint2016arXiv

Room Temperature Ferroelectricity in Continuous Croconic Acid Thin Films

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages >=20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

preprint2013arXiv

Room-temperature multiferroic hexagonal LuFeO3_3 films

The crystal and magnetic structures of single-crystalline hexagonal LuFeO3_3 films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed by a spin reorientation resulting in a weak ferromagnetic order below 130 K. This observation of coexisting multiple ferroic orders demonstrates that hexagonal LuFeO3_3 films are room-temperature multiferroics.

preprint2012arXiv

Cyrstal field splitting and optical band gap of hexagonal LuFeO3_3 films

Hexagonal LuFeO3_3 films have been studied using x-ray absorption and optical spectroscopy. The crystal splittings of Fe3+^{3+} are extracted as Ee′−Ee"E_{e'}-E_{e"}=0.7 eV and Ea1′−Ee′E_{a_1'}-E_{e'}=0.9 eV and a 2.0 eV optical band gap is determined assuming a direct gap. First-principles calculations confirm the experiments that the relative energies of crystal field splitting states do follow Ea1′>Ee′>Ee"E_{a_1'}>E_{e'}>E_{e"} with slightly underestimated values and a band gap of 1.35 eV.

preprint2012arXiv

Growth diagram and magnetic properties of hexagonal LuFe2_2O4_4 thin films

A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments. The LuFe2_2O4_4 phase can only be grown in a small range of temperature and O2_2 pressure conditions. An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface. Superparamagnetism is observed in LuFe2_2O4_4 film and is explained in terms of the effect of the impurity h-LuFeO3_3 phase and structural defects .

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