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Xiaoshan Xu

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Published work

16 published item(s)

preprint2021arXiv

Textured organic ferroelectric films from physical vapor deposition and amorphous-to-crystalline transition

Crystallization is a key for ferroelectricity which is a collective behavior of microscopic electric dipoles. On the other hand, uncontrolled crystallization leads to uneven morphology and random crystal orientations, which undermines the application potential of ferroelectric thin films. In this work, we introduce a film fabrication method of low-temperature physical vapor deposition followed by restrained crystallization, with electrical properties monitored in real-time by in situ measurements. This method was adopted to fabricate films of 2-methylbenzimidazole (MBI), whose molecule crystals are proton-transfer type biaxial ferroelectrics and tend to grow into a hedgehog-shaped spherulites morphology. The in situ measurements confirm that the crystallization, corresponding to a clear transition of physical properties, occurs dominantly during post-deposition warming. This enables the fabrication of micron-thick films in disk-shaped morphology with one polarization axis aligned along the out-of-plane direction, while the measured spontaneous polarization and coercive field are comparable to the single-crystal values. These results mark an important advancement of film growth that is expected to benefit widely the fabrication of molecular materials films whose functional properties hinge on crystallization to achieve desirable morphology and crystallinity.

preprint2019arXiv

Perpendicular Magnetic Anisotropy in Conducting NiCo2O4 Films from Spin-Lattice Coupling

High perpendicular magnetic anisotropy (PMA), a property needed for nanoscale spintronic applications, is rare in oxide conductors. We report the observation of a PMA up to 0.23 MJ/m3 in modestly strained epitaxial NiCo2O4 (NCO) films which are room-temperature ferrimagnetic conductors. Spin-lattice coupling manifested as magnetoelastic effect was found as the origin of the PMA. The in-plane xx-yy states of Co on tetrahedral sites play crucial role in the magnetic anisotropy and spin-lattice coupling with an energy scale of 1 meV/f.u. The elucidation of the microscopic origin paves a way for engineering oxide conductors for PMA using metal/oxygen hybridizations.

preprint2019arXiv

Probe Ferroelectricity by X-ray Absorption Spectroscopy in Molecular Crystal

We carry out X-ray absorption spectroscopy experiment at oxygen K-edge in croconic acid (C5H2O5) crystal as a prototype of ferroelectric organic molecular solid, whose electric polarization is generated by proton transfer. The experimental spectrum is well reproduced by the electron-hole excitation theory simulations from configuration generated by ab initio molecular dynamics simulation. When inversion symmetry is broken in ferroelectric state, the hydrogen bonding environment on the two bonded molecules become inequivalent. Such a difference is sensitively probed by the bound excitation in the pre-edge, which are strongly localized on the excited molecules. Our analysis shows that a satellite peak in the pre-edge will emerge at higher excitation energy which serves as a clear signature of ferroelectricity in the material.

preprint2016arXiv

Kinetics and Intermediate Phases in Epitaxial Growth of Fe3O4 Films from Deposition and Thermal Reduction

We have studied the growth of Fe3O4 (111) epitaxial films on Al2O3 (001) substrates using a pulsed laser deposition / thermal reduction cycle using an α-Fe2O3 target. While direct deposition onto the Al2O3 (001) substrates results in an α-Fe2O3 epilayer, deposition on the Fe3O4 (111) surface results in a γ-Fe2O3 epilayer. The kinetics of the transitions between Fe2O3 and Fe3O4 were studied by measuring the time constants of the transitions. The transition from α-Fe2O3 to Fe3O4 via thermal reduction turns out to be very slow, due to the high activation energy. Despite the significant grain boundaries due to the mismatch between the unit cells of the film and the substrate, the Fe3O4 (111) films grown from deposition/thermal reduction show high crystallinity.

preprint2016arXiv

On the Structural Origin of the Single-ion Magnetic Anisotropy in LuFeO3

Electronic structures for the conduction bands of both hexagonal and orthorhombic LuFeO3 thin films have been measured using x-ray absorption spectroscopy at oxygen K (O K) edge. Dramatic differences in both the spectra shape and the linear dichroism are observed. These differences in the spectra can be explained using the differences in crystal field splitting of the metal (Fe and Lu) electronic states and the differences in O 2p-Fe 3d and O 2p-Lu 5d hybridizations. While the oxidation states has not changed, the spectra are sensitive to the changes in the local environments of the Fe3+ and Lu3+ sites in the hexagonal and orthorhombic structures. Using the crystal-field splitting and the hybridizations that are extracted from the measured electronic structures and the structural distortion information, we derived the occupancies of the spin minority states in Fe3+, which are non-zero and uneven. The single ion anisotropy on Fe3+ sites is found to originate from these uneven occupancies of the spin minority states via spin-orbit coupling in LuFeO3.

preprint2016arXiv

Room Temperature Ferroelectricity in Continuous Croconic Acid Thin Films

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages >=20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

preprint2014arXiv

Active control of magnetoresistance of organic spin valves using ferroelectricity

Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

preprint2014arXiv

Multiferroic hexagonal ferrites (h-RFeO$_3$, R=Y, Dy-Lu): an experimental review

Hexagonal ferrites (h-RFeO$_3$, R=Y, Dy-Lu) have recently been identified as a new family of multiferroic complex oxides. The coexisting spontaneous electric and magnetic polarizations make h-RFeO$_3$ rare-case ferroelectric ferromagnets at low temperature. Plus the room-temperature multiferroicity and predicted magnetoelectric effect, h-RFeO$_3$ are promising materials for multiferroic applications. Here we review the structural, ferroelectric, magnetic, and magnetoelectric properties of h-RFeO$_3$. The thin film growth is also discussed because it is critical in making high quality single crystalline materials for studying intrinsic properties.

preprint2014arXiv

Structural and electronic origin of the magnetic structures in hexagonal LuFeO$_3$

Using combined theoretical and experimental approaches, we studied the structural and electronic origin of the magnetic structure in hexagonal LuFeO$_3$. Besides showing the strong exchange coupling that is consistent with the high magnetic ordering temperature, the previously observed spin reorientation transition is explained by the theoretically calculated magnetic phase diagram. The structural origin of this spin reorientation that is responsible for the appearance of spontaneous magnetization, is identified by theory and verified by x-ray diffraction and absorption experiments.

preprint2013arXiv

Electrophoretic-like gating used to control metal-insulator transitions in electronically phase separated manganite wires

Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly resistant to thermal breakdown caused by repeated cycling. It is further demonstrated that multiple discrete resistive states can be accessed in a single wire. The results conform to a phenomenological model in which the inherent nanoscale insulating and metallic domains are rearranged through electrophoretic-like processes to open and close percolation channels.

preprint2013arXiv

Growth diagram of La0.7Sr0.3MnO3 thin films using pulsed laser deposition

An experimental study was conducted on controlling the growth mode of La0.7Sr0.3MnO3 thin films on SrTiO3 substrates using pulsed laser deposition (PLD) by tuning growth temperature, pressure and laser fluence. Different thin film morphology, crystallinity and stoichiometry have been observed depending on growth parameters. To understand the microscopic origin, the adatom nucleation, step advance processes and their relationship to film growth were theoretically analyzed and a growth diagram was constructed. Three boundaries between highly and poorly crystallized growth, 2D and 3D growth, stoichiometric and non-stoichiometric growth were identified in the growth diagram. A good fit of our experimental observation with the growth diagram was found. This case study demonstrates that a more comprehensive understanding of the growth mode in PLD is possible.

preprint2013arXiv

Room-temperature multiferroic hexagonal LuFeO$_3$ films

The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$ films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed by a spin reorientation resulting in a weak ferromagnetic order below 130 K. This observation of coexisting multiple ferroic orders demonstrates that hexagonal LuFeO$_3$ films are room-temperature multiferroics.

preprint2012arXiv

Cyrstal field splitting and optical band gap of hexagonal LuFeO$_3$ films

Hexagonal LuFeO$_3$ films have been studied using x-ray absorption and optical spectroscopy. The crystal splittings of Fe$^{3+}$ are extracted as $E_{e'}-E_{e"}$=0.7 eV and $E_{a_1'}-E_{e'}$=0.9 eV and a 2.0 eV optical band gap is determined assuming a direct gap. First-principles calculations confirm the experiments that the relative energies of crystal field splitting states do follow $E_{a_1'}>E_{e'}>E_{e"}$ with slightly underestimated values and a band gap of 1.35 eV.

preprint2012arXiv

Growth diagram and magnetic properties of hexagonal LuFe$_2$O$_4$ thin films

A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments. The LuFe$_2$O$_4$ phase can only be grown in a small range of temperature and O$_2$ pressure conditions. An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface. Superparamagnetism is observed in LuFe$_2$O$_4$ film and is explained in terms of the effect of the impurity h-LuFeO$_3$ phase and structural defects .

preprint2010arXiv

Bistability of Free Cobalt and Iron Clusters

The cobalt and iron clusters CoN, FeN (20 < N < 150) measured in a cryogenic molecular beam are found to be bistable with magnetic moments per atom both μN/N 2μB in the ground states and μN */N μB in the metastable excited states (for iron clusters, μN ~3NμB and μN* NμB). This energy gap between the two states vanish for large clusters, which explains the rapid convergence of the magnetic moments to the bulk value and suggests that ground state for the bulk involves a superposition of the two, in line with the fluctuating local orders in the bulk itinerant ferromagnetism.

preprint2006arXiv

Non-classical dipoles in cold niobium clusters

Electric deflections of niobium clusters in molecular beams show that they have permanent electric dipole moments at cryogenic temperatures but not higher temperatures, indicating that they are ferroelectric. Detailed analysis shows that the deflections cannot be explained in terms of a rotating classical dipole, as claimed by Anderson et al. The shapes of the deflected beam profiles and their field and temperature dependences indicates that the clusters can exist in two states, one with a dipole and the other without. Cluster with dipoles occupy lower energy states. Excitations from the lower states to the higher states can be induced by low fluence laser excitation. This causes the dipole to vanish.