Source author record

Xue-Jing Zhang

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

Catalog footprint

Research overview

2works

3topics

3close collaborators

Actions

Is this your work?

Open graph Browse papers

preprint2022arXiv

LaVO $_3$ : a true Kugel-Khomskii system

We show that the $t_{2g}^2$ perovskite LaVO $_3$ , in its orthorhombic phase, is a rare case of a system hosting an orbital-ordering Kugel-Khomskii phase transition, rather than being controlled by the Coulomb-enhanced crystal-field splitting. We find that, as a consequence of this, the magnetic transition is close to (and even above) the super-exchange driven orbital-ordering transition, whereas typically magnetism arises at much lower temperatures than orbital ordering. Our results support the experimental scenario of orbital-ordering and G-type spin correlations just above the monoclinic-to-orthorhombic structural change. To explore the effects of crystal-field splitting and filling, we compare to YVO $_3$ and $t_{2g}^1$ titanates. In all these materials the crystal-field is sufficiently large to suppress the Kugel-Khomskii phase transition.

preprint2016arXiv

Two-Dimensional Wide-Band-Gap II-V Semiconductors with a Dilated Graphene-like Structure

Since the advent of graphene, two-dimensional (2D) materials become very attractive and there is growing interest to explore new 2D beyond graphene. Here, through density functional theory (DFT) calculations, we predict 2D wide-band-gap II-V semiconductor materials of M $_3$ X $_2$ (M=Zn, Cd and X=N, P, As) with a dilated graphene-like honeycomb structure. The structure features that the group-V X atoms form two X-atomic planes symmetrically astride the centering group-IIB M atomic plane. The 2D Zn $_3$ N $_2$ , Zn $_3$ P $_2$ , and Zn $_3$ As $_2$ are shown to have direct band gaps of 2.87, 3.81, and 3.55 eV, respectively, and the 2D Cd $_3$ N $_2$ , Cd $_3$ P $_2$ , and Cd $_3$ As $_2$ exhibit indirect band gaps of 2.74, 3.51, and 3.29 eV, respectively. Each of the six 2D materials is shown to have effective carrier (either hole or electron) masses down to $0.03\sim 0.05$ $m_0$ . The structural stability and feasibility of experimental realization of these 2D materials has been shown in terms of DFT phonon spectra and total energy comparison with related existing bulk materials. On the experimental side, there already are many similar two-coordinate structures of Zn and other transition metals in various organic materials, which can be considered to support our DFT prediction. Therefore, these 2D semiconductors can enrich the family of 2D electronic materials and may have promising potential for achieving novel transistors and optoelectronic devices.

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Xue-Jing Zhang

Research overview

Is this your work?

2 publications

LaVO $_3$ : a true Kugel-Khomskii system

Two-Dimensional Wide-Band-Gap II-V Semiconductors with a Dilated Graphene-like Structure

See the researcher in context

Building this map preview

Xue-Jing Zhang

Research overview

Is this your work?

2 publications

LaVO3_33​: a true Kugel-Khomskii system

Two-Dimensional Wide-Band-Gap II-V Semiconductors with a Dilated Graphene-like Structure

See the researcher in context

Building this map preview

LaVO $_3$ : a true Kugel-Khomskii system