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Researcher profile

Xiyuan Zhang

Xiyuan Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-dethep-ex

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Published work

3 published item(s)

preprint2022arXiv

Simulation of the 4H-SiC Low Gain Avalanche Diode

Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time performance. Therefore, the 4H-SiC LGAD is introduced in this work for application to detect the Minimum Ionization Particles (MIPs). We provide guidance to determine the thickness and doping level of the gain layer after an analytical analysis. The gain layer thickness $d_{gain}=0.5~μm$ is adopted in our design. We design two different types of 4H-SiC LGAD which have two types electric field, and the corresponding leakage current, capacitance and gain are simulated by TCAD tools. Through analysis of the simulation results, the advantages and disadvantages are discussed for two types of 4H-SiC LGAD.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Time Resolution of the 4H-SiC PIN Detector

We address the determination of the time resolution for the $\rm 100~μm$ 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to $\rm β$ particles from a $\rm ^{90}$Sr source is investigated for the detection of the minimum ionizing particles (MIPs). We study the influence of different reverse voltages, which correspond to different carrier velocities and device sizes, and how this correlates with the detector capacitance. We determine a time resolution $\rm (94\pm1)~ps$ for $\rm 100~μm$ 4H-SiC PIN detector. A fast simulation software, termed RASER (RAdiation SEmiconductoR), is developed, and validated by comparing the waveform obtained from simulated and measured data. The simulated time resolution is $\rm (73\pm 1)~ps$ after considering the intrinsic leading contributions of the detector to time resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Timing performance simulation for 3D 4H-SiC detector

To meet high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. SiC detectors could potentially operate in radiation harsh and room temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. 3D structure, which decouples thickness and distance between electrodes, further improves timing performance and radiation hardness of the detector. We developed a simulation software - RASER (RAdiation SEmiconductoR) to simulate the time resolution of planar and 3D 4H-SiC detectors with different parameters and structures, and the reliability of the software is verified by comparing time resolution results of simulation with data. The rough time resolution of 3D 4H-SiC detector was estimated, and the simulation parameters could be used as guideline to 3D 4H-SiC detector design and optimization.

0 citations0 reviewsNo code linkedOpen access