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Xiufang Lu

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2019arXiv

Finite-temperature violation of the anomalous transverse Wiedemann-Franz law

The Wiedemann-Franz (WF) law links the ratio of electronic charge and heat conductivity to fundamental constants. It has been tested in numerous solids, but the extent of its relevance to the anomalous transverse transport, which represents the topological nature of the wave function, remains an open question. Here we present a study of anomalous transverse response in the noncollinear antiferromagnet Mn$_{3}$Ge extended from room temperature down to sub-Kelvin temperature and find that the anomalous Lorenz ratio remains close to the Sommerfeld value up to 100 K, but not above. The finite-temperature violation of the WF correlation is caused by a mismatch between the thermal and electrical summations of the Berry curvature, rather than the inelastic scattering as observed in ordinary metals. This interpretation is backed by our theoretical calculations, which reveals a competition between the temperature and the Berry curvature distribution. The accuracy of the experiment is supported by the verification of the Bridgman relation between the anomalous Ettingshausen and Nernst effects. Our results identify the anomalous Lorenz ratio as an extremely sensitive probe of Berry spectrum near the chemical potential.

preprint2019arXiv

Intrinsic anomalous Nernst effect amplified by disorder in a half-metallic semimetal

Intrinsic anomalous Nernst effect (ANE), like its Hall counterpart, is generated by Berry curvature of electrons in solids. Little is known about its response to disorder. In contrast, the link between the amplitude of the ordinary Nernst coefficient and the mean-free-path is extensively documented. Here, by studying Co$_3$Sn$_2$S$_2$, a topological half-metallic semimetal hosting sizable and recognizable ordinary and anomalous Nernst responses, we demonstrate an anti-correlation between the amplitude of ANE and carrier mobility. We argue that the observation, paradoxically, establishes the intrinsic origin of the ANE in this system. We conclude that various intrinsic off-diagonal coefficients are set by the way the Berry curvature is averaged on a grid involving the mean-free-path, the Fermi wavelength and the de Broglie thermal length.

preprint2015arXiv

Monolayer Excitonic Laser

Recently, two-dimensional (2D) materials have opened a new paradigm for fundamental physics explorations and device applications. Unlike gapless graphene, monolayer transition metal dichalcogenide (TMDC) has new optical functionalities for next generation ultra-compact electronic and opto-electronic devices. When TMDC crystals are thinned down to monolayers, they undergo an indirect to direct bandgap transition, making it an outstanding 2D semiconductor. Unique electron valley degree of freedom, strong light matter interactions and excitonic effects were observed. Enhancement of spontaneous emission has been reported on TMDC monolayers integrated with photonic crystal and distributed Bragg reflector microcavities. However, the coherent light emission from 2D monolayer TMDC has not been demonstrated, mainly due to that an atomic membrane has limited material gain volume and is lack of optical mode confinement. Here, we report the first realization of 2D excitonic laser by embedding monolayer tungsten disulfide (WS2) in a microdisk resonator. Using a whispering gallery mode (WGM) resonator with a high quality factor and optical confinement, we observed bright excitonic lasing in visible wavelength. The Si3N4/WS2/HSQ sandwich configuration provides a strong feedback and mode overlap with monolayer gain. This demonstration of 2D excitonic laser marks a major step towards 2D on-chip optoelectronics for high performance optical communication and computing applications.