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Researcher profile

Xiong Yao

Xiong Yao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conphysics.opticsquant-ph

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Published work

4 published item(s)

preprint2026arXiv

Long-range optomechanical interactions in SiN membrane arrays

Optomechanical systems using a membrane-in-the-middle configuration can exhibit a long-range type of interaction similar to how atoms show collective motion in an optical potential. Photons bounce back and forth inside a high-finesse Fabry-Pérot cavity and mediate the interaction between multiple membranes over a significant distance compared to the wavelength. Recently, it has been demonstrated that off-resonant coupling between light and the inter-membrane cavity can lead to coherent mechanical noise cancellation. On-resonance coupling of light with both the Fabry-Pérot and inter-membrane cavities, predicted to enhance the single photon optomechanical coupling, have to date not been experimentally demonstrated, however. In our experiment, a double-membrane system inside a Fabry-Pérot cavity resonantly enhances the cavity field, resulting in a stronger optomechanical coupling strength from the increased radiation pressure. The resonance condition is first identified by analyzing the slope of the dispersion relation. Then, the optomechanical coupling is determined at various chip positions over one wavelength range. The optimum coupling conditions are obtained and enhancement is demonstrated for double membrane arrays with three different reflectivites, reaching nearly four-fold enhancement for the collective motion of $R=65\%$ double membranes. The cavity losses at the optimum coupling are also characterized and the potential of reaching the single-photon strong coupling regime is discussed.

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preprint2021arXiv

From classical to quantum regime of topological surface states via defect engineering

Since the notion of topological insulator (TI) was envisioned in late 2000s, topology has become a new paradigm in condensed matter physics. Realization of topology as a generic property of materials has led to numerous predictions of topological effects. Although most of the classical topological effects, directly resulting from the presence of the spin-momentum-locked topological surface states (TSS), were experimentally confirmed soon after the theoretical prediction of TIs, many topological quantum effects remained elusive for a long while. It turns out that native defects, particularly interfacial defects, have been the main culprit behind this impasse. Even after quantum regime is achieved for the bulk states, TSS still tends to remain in the classical regime due to high density of interfacial defects, which frequently donate mobile carriers due to the very nature of the topologically-protected surface states. However, with several defect engineering schemes that suppress these effects, a series of topological quantum effects have emerged including quantum anomalous Hall effect, quantum Hall effect, quantized Faraday/Kerr rotations, topological quantum phase transitions, axion insulating state, zeroth-Landau level state, etc. Here, we review how these defect engineering schemes have allowed topological surface states to pull out of the murky classical regime and reveal their elusive quantum signatures, over the past decade.

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preprint2020arXiv

Structurally and Chemically Compatible BiInSe3 Substrate for Topological Insulator Thin Films

Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: the more closely they match, the better the film quality is. Topological insulators (TI) such as Bi2Se3 thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe3 bulk crystal as the best substrate for Bi2Se3 thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe3 substrate. BiInSe3 substrate could accelerate the advance of TI research and applications.

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preprint2019arXiv

Studies on the origin of the interfacial superconductivity of Sb2Te3/Fe1+yTe heterostructures

The recent discovery of the interfacial superconductivity (SC) of the Bi2Te3/Fe1+yTe heterostructure has attracted extensive studies due to its potential as a novel platform for trapping and controlling Majorana fermions. Here we present studies of another topological insulator (TI)/Fe1+yTe heterostructure, Sb2Te3/Fe1+yTe, which also enjoys an interfacial two-dimensional SC. The results of transport measurements support that the reduction of excess Fe concentration of the Fe1+yTe layer not only increases the fluctuation of its antiferromagnetic (AFM) order but also enhances the quality of the SC of this heterostructure system. On the other hand, the interfacial SC of this heterostructure was found to have a wider-ranging TI-layer thickness dependence than that of the Bi2Te3/Fe1+yTe heterostructure, which is believed to be attributed to the much higher bulk conductivity of Sb2Te3 that enhances indirect coupling between its top and bottom topological surface states (TSSs). Our results provide the evidence of the interplay among the AFM order, itinerant carries from the TSSs and the induced interfacial SC of the TI/Fe1+yTe heterostructure system.

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