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Changjin Zhang

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Published work

10 published item(s)

preprint2022arXiv

Switchable and unswitchable bulk photovoltaic effect in two-dimensional interlayer-sliding ferroelectrics

Spontaneous polarization and bulk photovoltaic effect (BPVE) are two concomitant physical properties in ferroelectric materials. The flipping of ferroelectric order usually accompanies with the switching of BPVE as both of them are reversed under the inversion symmetry. In this study, we report the distinctive BPVE characters in two-dimensional (2D) interlayer sliding ferroelectric materials featuring unswitchable in-plane BPVE (light-induced photocurrent in the xy plane) and switchable out-of-plane BPVE (light-induced polarization along the z-direction). Symmetry analysis within abstract bilayer crystal model and first-principles calculations validate these BPVE properties. It is because the positive and negative ferroelectric states caused by interlayer sliding are related by mirror symmetry which cannot flip all the BPVE tensor elements. This finding extends the understanding of the relationship between ferroelectricity and BPVE. On one hand, the switchable out-of-plane BPVE can be used to design switchable photoelectric devices. On the other hand, the in-plane BPVE is robust against the ferroelectric flipping, and the unswitchable character is beneficial to construct larger-scale photoelectric devices.

preprint2019arXiv

Quantum Criticality of Excitonic Insulating Transition in Nodal Line Semimetal ZrSiS

Pezzini et al. reported an unconventional mass enhancement in topological nodal line semimetal ZrSiS (Nat. Phys. 14, 178 (2018), whose origin remains puzzling. In this material, strong short-range interactions might induce excitonic particle-hole pairs. Here we study the renormalization of fermion velocities and find that the mass enhancement in ZrSiS can be well understood if we suppose that ZrSiS is close to the quantum critical point between semimetal and excitonic insulator. Near this quantum critical point, the fermion velocities are considerably reduced by excitonic quantum fluctuation, leading to fermion mass enhancement. The quasiparticle residue is suppressed as the energy decreases but is finite at zero energy. This indicates that ZrSiS is a strongly correlated Fermi liquid, and explains why the mass enhancement is weaker than non-Fermi liquids. Our results suggest that ZrSiS is a rare example of 3D topological semimetal exhibiting unusual quantum criticality.

preprint2016arXiv

Dominant itinerant ferromagnetism in Eu0.5Sr0.5CoO3: evidences from both critical analysis and Rhodes-Wohlfarth's criterion

The critical behaviors of ferromagnet Eu0.5Sr0.5CoO3 arround TC=140.5K have been comprehensively investigated by analyzing a series of isothermal magnetization M(H) curves. Both Modified Arrott plot and Kouvel-Fisher methods give nearly the same critical exponents, which scale nicely the M(H) curves into two different branches below and above TC. The exponents γ=1.044 and δ=3.06 demonstrate the relevance of mean-field characters for this material. The conclusion of mean-field behavior proves a dominant itinerant ferromagnetism (FM) due to a long range exchange interaction in the system. Meanwhile, by using Rhodes-Wohlfarth's criterion [P. Rhodes and E. P. Wohlfarth, Proc. R. Soc. Lond. A 273, 247 (1963)], it is further confirmed that the itinerant FM dominates in the system.

preprint2016arXiv

Pressure induced re-emergence of superconductivity in superconducting topological insulator Sr0.065Bi2Se3

The recent-discovered Sr$_x$Bi$_2$Se$_3$ superconductor provides an alternative and ideal material base for investigating possible topological superconductivity. Here, we report that in Sr$_{0.065}$Bi$_{2}$Se$_3$, the ambient superconducting phase is gradually depressed upon the application of external pressure. At high pressure, a second superconducting phase emerges at above 6 GPa, with a maximum $T_c$ value of $\sim$8.3 K. The joint investigations of the high-pressure synchrotron x-ray diffraction and electrical transport properties reveal that the re-emergence of superconductivity in Sr$_{0.065}$Bi$_{2}$Se$_3$ is closely related to the structural phase transition from ambient rhombohedral phase to high-pressure monoclinic phase around 6 GPa, and further to another high-pressure tetragonal phase above 25 GPa.

preprint2016arXiv

Single Crystal Growth of the New Pressure-induced-superconductor CrAs via Chemical Vapor Transport

Mono-arsenide CrAs, endures a helical anti-ferromagnetic order transition at~ 265 K under ambient pressure. Recently, pressure-induced-superconductivity was discovered vicinity to the helical anti-ferromagnetic order in CrAs[Wei Wu et al., Nature Communications 5, 5508 (2014).]. However, the size of crystal grown via tin flux method is as small as 1 mm in longest dimension. In this work, we report the single crystal growth of CrAs with size of 1 * 5 * 1 mm3 via chemical vapor transport method and its physical properties.

preprint2015arXiv

Superconductivity with topological surface state in SrxBi2Se3

By intercalation of alkaline-earth metal Sr in Bi2Se3, superconductivity with large shielding volume fraction (~91.5% at 0.5 K) has been achieved in Sr0.065Bi2Se3. The analysis of the Shubnikov-de Hass oscillations confirms the 1/2-shift expected from a Dirac spectrum, giving transport evidence of the existence of surface states. Importantly, the SrxBi2Se3superconductor is stable under air, making the SrxBi2Se3 compound an ideal material base for investigating topological superconductivity.

preprint2014arXiv

Bulk superconductivity in single phase Bi3O2S3

We report the synthesis of single phase Bi3O2S3 sample and confirm the occurrence of bulk superconductivity with transition temperature at 5.8 K. The Bi3O2S3 super-conductor is categorized as the typical type-II supercon-ductor based on the results of both temperature and mag-netic field dependences of magnetization. Hall coefficient measurements give evidence of a multiband character, with a dominant conduction mainly by electron-like charge carriers. The charge carrier density is about 1.45 X 1019 cm3, suggesting that the system has very low charge carrier density.

preprint2014arXiv

Superconducting properties of novel BiSe$_{2}$-based layered LaO$_{1-x}$F$_{x}$BiSe$_{2}$ single crystals

F-doped LaOBiSe$_{2}$ superconducting single crystals with typical size of 2$\times$4$\times$0.2 mm$^{3}$ are successfully grown by flux method and the superconducting properties are studied. Both the superconducting transition temperature and the shielding volume fraction are effectively improved with fluorine doping. The LaO$_{0.48}$F$_{0.52}$BiSe$_{1.93}$ sample exhibits zero-resistivity at 3.7 K, which is higher than that of the LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$ polycrystalline sample (2.4K). Bulk superconductivity is confirmed by a clear specific-heat jump at the associated temperature. The samples exhibit strong anisotropy and the anisotropy parameter is about 30, as estimated by the upper critical field and effective mass model

preprint2013arXiv

Superconducting fiber with transition temperature up to 7.43 K in Nb2PdxS5-delta (0< x <0.6)

Wiring systems powered by high-efficient superconductors have long been a dream of scientists, but researchers have faced practical challenges such as finding flexible materials. Here we report superconductivity in Nb2PdxS5-delta fibers with transition temperature up to 7.43 K, which have typical diameters of 0.3-3 micrometer. Superconductivity occurs in a wide range of Pd and S contents, suggesting that the superconductivity in this system is very robust. Long fibers with suitable size provide a new route to high-power transmission cables and electronic devices.

preprint2011arXiv

Single crystal growth of BaFe$_{2-x}$Co$_x$As$_2$ without fluxing agent

We report a simple, reliable method to grow high quality BaFe$_{2-x}$Co$_x$As$_2$ single crystal samples without using any fluxing agent. The starting materials for the single crystal growth come from well-crystallized polycrystalline samples and the highest growing temperature can be 1493 K. The as-grown crystals have typical dimensions of 4$\times3\times$0.5 mm$^3$ with c-axis perpendicular to the shining surface. We find that the samples have very large current carrying ability, indicating that the samples have good potential technological applications.