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Xinxin Cai

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Published work

2 published item(s)

preprint2015arXiv

Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$

Strong spin-orbital coupling (SOC) was found previously to lead to dramatic effects in quantum materials, such as those found in topological insulators. It was shown theoretically that local noncentrosymmetricity resulting from the rotation of RuO$_6$ octahedral in Sr$_3$Ru$_2$O$_7$ will also give rise to an effective SOC\cite{SocSr327,MicroscopicnematicSr327}. In the presence of a magnetic field applied along a specific in-plane direction, the Fermi surface was predicted to undergo a reconstruction. Here we report results of our in-plane magnetoresistivity and magnetothermopower measurements on single crystals of Sr$_3$Ru$_2$O$_7$ with an electrical or a thermal current applied along specific crystalline directions and a magnetic field rotating in the $ab$ plane (Fig. 1a), showing a minimal value for field directions predicted by the local noncentrosymmetricity theory. Furthermore, the thermopower, and therefore, the electron entropy, were found to be suppressed as the field was applied perpendicular to the thermal current, which suggests that the spin and the momentum in Sr$_3$Ru$_2$O$_7$ are locked over substantial parts of the Fermi surface, likely originating from local noncentrosymmetricity as well.

preprint2013arXiv

Structural and metal-insulator transitions in ionic liquid-gated Ca3Ru2O7 surface

We report the fabrication and measurements of ionic liquid gated Hall bar devices prepared on thin Ca$_3$Ru$_2$O$_7$ flakes exfoliated from bulk single crystals that were grown by a floating zone method. Two types of devices with their electrical transport properties dominated by $c$-axis transport in Type A or that of the in-plane in Type B devices, were prepared. Bulk physical phenomena, including a magnetic transition near 56 K, a structural and metal-insulator transition at a slightly lower temperature, as well as the emergence of a highly unusual metallic state as the temperature is further lowered, were found in both types of devices. However, the Shubnikov-de Haas oscillations were found in Type A but not Type B devices, most likely due to enhanced disorder on the flake surface. Finally, the ionic liquid gating of a Type B device revealed a shift in critical temperature of the structural and metal-insulator transitions, suggesting that such transitions can be tuned by the electric field effect.