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Researcher profile

Chenyi Shen

Chenyi Shen contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.str-elcond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2016arXiv

Vortex crossing, trapping and pinning in superconducting nanowires of a NbSe$_2$ two-dimensional crystal

Nanowires of two-dimensional (2D) crystals of type-II superconductor NbSe$_2$ prepared by electron-beam lithography were studied, focusing on the effect of the motion of Abrikosov vortices. We present magnetoresistance measurements on these nanowires and show features related to vortex crossing, trapping, and pinning. The vortex crossing rate was found to vary non-monotonically with the applied field, which results in non-monotonic magnetoresistance variations in agreement with theoretical calculations in the London approximation. Above the lower critical field, $H_{c1}$, the crossing rate is also influenced by vortices trapped by sample boundaries or pinning centers, leading to sample-specific magnetoresistance patterns. We show that the local pinning potential can be modified by intentionally introducing surface adsorbates, making the magnetoresistance pattern a "magneto fingerprint" of the sample-specific configuration of vortex pinning centers in a 2D crystal superconducting nanowire.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$

Strong spin-orbital coupling (SOC) was found previously to lead to dramatic effects in quantum materials, such as those found in topological insulators. It was shown theoretically that local noncentrosymmetricity resulting from the rotation of RuO$_6$ octahedral in Sr$_3$Ru$_2$O$_7$ will also give rise to an effective SOC\cite{SocSr327,MicroscopicnematicSr327}. In the presence of a magnetic field applied along a specific in-plane direction, the Fermi surface was predicted to undergo a reconstruction. Here we report results of our in-plane magnetoresistivity and magnetothermopower measurements on single crystals of Sr$_3$Ru$_2$O$_7$ with an electrical or a thermal current applied along specific crystalline directions and a magnetic field rotating in the $ab$ plane (Fig. 1a), showing a minimal value for field directions predicted by the local noncentrosymmetricity theory. Furthermore, the thermopower, and therefore, the electron entropy, were found to be suppressed as the field was applied perpendicular to the thermal current, which suggests that the spin and the momentum in Sr$_3$Ru$_2$O$_7$ are locked over substantial parts of the Fermi surface, likely originating from local noncentrosymmetricity as well.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Vortex crossing and trapping in doubly connected mesoscopic loops of a single-crystal type II superconductor

Numerical calculations on a mesoscopic ring of a type II superconductor in the London limit suggest that an Abrikosov vortex can be trapped in such a structure above a critical magnetic field and generate a phase shift in the magnetoresistance oscillations. We prepared submicron-sized superconducting loops of single-crystal, type II superconductor NbSe$_2$ and measured magnetoresistance oscillations resulting from vortices crossing the loops. The free energy barrier for vortex crossing determines the crossing rate and is periodically modulated by the external magnetic flux threading the loop. We demonstrated experimentally that the crossing of vortices can be directed at a pair of constrictions in the loop, leading to more pronounced magnetoresistance oscillations than those in a uniform ring. The vortex trapping in both a simple ring and a ring featuring two constrictions was found to result in a phase shift in the magnetoresistance oscillations as predicted in the numerical calculations. The controlled crossing and trapping of vortices demonstrated in our NbSe$_2$ devices provide a starting point for the manipulation of individual Abrikosov vortices, which is useful for future technologies.

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preprint2013arXiv

Li$_2$RhO$_3$: A spin-glassy relativistic Mott insulator

Motivated by the rich interplay among electronic correlation, spin-orbit coupling (SOC), crystal-field splitting, and geometric frustrations in the honeycomb-like lattice, we systematically investigated the electronic and magnetic properties of Li$_2$RhO$_3$. The material is semiconducting with a narrow band gap of $Δ\sim$78 meV, and its temperature dependence of resistivity conforms to 3D variable range hopping mechanism. No long-range magnetic ordering was found down to 0.5 K, due to the geometric frustrations. Instead, single atomic spin-glass behavior below the spin-freezing temperature ($\sim$6 K) was observed and its spin dynamics obeys the universal critical slowing down scaling law. First principle calculations suggested it to be a relativistic Mott insulator mediated by both electronic correlation and SOC. With moderate strength of electronic correlation and SOC, our results shed new light to the research of Heisenberg-Kitaev model in realistic materials.

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preprint2013arXiv

Single-crystal superconducting nanowires of NbSe$_2$ fabricated by reactive plasma etching

We present the preparation and measurements of nanowires of single-crystal NbSe$_2$. These nanowires were prepared on ultrathin ($\lesssim10\text{ nm}$) flakes of NbSe$_2$ mechanically exfoliated from a bulk single crystal using a process combining electron beam lithography and reactive plasma etching. The electrical contacts to the nanowires were prepared using Ti/Au. Our technique, which overcomes several limitations of methods developed previously for fabricating superconducting nanowires, also allows for the preparation of complex superconducting nanostructures with a desired geometry. Current-voltage characteristics of individual superconducting single-crystal nanowires with widths down to 30~nm and cross-sectional areas as low as 270 nm$^2$ were measured for the first time.

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preprint2013arXiv

Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with TC around 200K

Here we report the synthesis of a bulk oxide diluted magnetic semiconductor (DMS) system La1-xSrxCu0.925Mn0.075SO (x=0, 0.025, 0.05, 0.075, and 0.1). As a wide band gap p-type oxide semiconductor, LaCuSO satisfies all the conditions forecasted theoretically to be a room temperature DMS. The Curie temperature (TC) is around 200K as x>0.05, which is among the highest TC record of known bulk DMS materials up to now. The system provides a rare example of oxide DMS system with p-type conduction, which is important for formation of high temperature spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic property and crystalline electric field effect in ThCr$_2$Si$_2$-type CeNi$_2$As$_2$

Millimeter sized ThCr$_2$Si$_2$-type CeNi$_2$As$_2$ single crystal was synthesized by NaAs flux method and its physical properties were investigated by magnetization, transport and specific heat measurements. In contrast to the previously reported CaBe$_2$Ge$_2$-type CeNi$_2$As$_2$, the ThCr$_2$Si$_2$-type CeNi$_2$As$_2$ is a highly anisotropic uniaxial antiferromagnet with the transition temperature $T_N$=4.8 K. A field induced spin flop transition was seen below $T_N$ when the applied $\textbf{B}$ is parallel to the $\textbf{c}$-axis, the magnetic easy axis, together with a huge frustration parameter $f=θ_W/T_N$. A pronounced Schottky-like anomaly in specific heat was also found around 160 K, which could be attributed to the crystalline electric field effect with the excitation energies being fitted to $Δ_1=$325 K and $Δ_2=$520 K, respectively. Moreover, the in-plane resistivity anisotropy and low temperature X-ray diffractions suggest that this compound is a rare example exhibiting a possible structure distortion induced by the $4f$-electron magnetic frustration.

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