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Xingxing Li

Xingxing Li contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2025arXiv

Bringing The Consistency Gap: Explicit Structured Memory for Interleaved Image-Text Generation

Existing Vision Language Models (VLMs) often struggle to preserve logic, entity identity, and artistic style during extended, interleaved image-text interactions. We identify this limitation as "Multimodal Context Drift", which stems from the inherent tendency of implicit neural representations to decay or become entangled over long sequences. To bridge this gap, we propose IUT-Plug, a model-agnostic Neuro-Symbolic Structured State Tracking mechanism. Unlike purely neural approaches that rely on transient attention maps, IUT-Plug introduces the Image Understanding Tree (IUT) as an explicit, persistent memory module. The framework operates by (1) parsing visual scenes into hierarchical symbolic structures (entities, attributes, and relationships); (2) performing incremental state updates to logically lock invariant properties while modifying changing elements; and (3) guiding generation through topological constraints. We evaluate our approach on a novel benchmark comprising 3,000 human-annotated samples. Experimental results demonstrate that IUT-Plug effectively mitigates context drift, achieving significantly higher consistency scores compared to unstructured text-prompting baselines. This confirms that explicit symbolic grounding is essential for maintaining robust long-horizon consistency in multimodal generation.

preprint2022arXiv

Ferromagnetic Negative Charge-Transfer Insulator: from Theoretical Proposal to Material Realization

Here we propose another type of ferromagnetic semiconductors: ferromagnetic negative charge-transfer insulator (FNCTI). In FNCTI, the negative charge-transfer states strongly enhance the ferromagnetic (FM) exchange interactions and the orbital hybridization gap permits the magnetic molecular orbitals as the underlying magnetic units rather than local atomic orbitals. Thus the FM exchange interactions are rather strong and decay slowly due to the large spearding of magnetic molecular orbitals. This is distinct from the superexchange mechanism where FM exchange interactions are quite weak as summarized in the well-known Goodenough-Kanamori-Anderson semi-empirical rules.Through first-principle calculations with the hybrid functional, PbO-type CrAs monolayer is mapped out to be a FNCTI, which possesses a band gap $\sim$ 0.35 eV, FM nearest-/next-nearest-neighbor exchange coupling strength $\sim$ 57/40 meV, and a high $T_c$ $\sim$ 1500 K respectively. It is believed that the existence of FNCTI validates the long-pending hypothesis by D. I. Khomskii and G. A. Sawatzky in 1997 [Solid State Commun. 102, 87 (1997)].

preprint2022arXiv

Two-Dimensional Semiconducting Metal Organic Frameworks with Auxetic Effect, Room Temperature Ferrimagnetism, Chiral Ferroelectricity, Bipolar Spin Polarization and Topological Nodal Lines/Points

Two-dimensional (2D) semiconductors integrated with two or more functions are the cornerstone for constructing multifunctional nanodevices, but remain largely limited. Here, by tuning the spin state of organic linkers and the symmetry/topology of crystal lattice, we predict a class of unprecedented multifunctional semiconductors in 2D Cr(II) five-membered heterocyclic metal organic frameworks that simultaneously possess auxetic effect, room temperature ferrimagnetism, chiral ferroe-lectricity, electrically reversible spin polarization and topological nodal lines/points. Taking 2D Cr(TDZ)$_2$ (TDZ=1.2.5-thiadiazole) as an exemplification, the auxetic effect is produced by the anti-tetra-chiral lattice structure. The high temperature ferrimagnetism originates from the strong d-p direct magnetic exchange interaction between Cr cations and TDZ doublet radical anions. Meanwhile, the clockwise-counterclockwise alignment of TDZ' dipoles results in unique 2D chiral ferroelectricity with atomic-scale vortex-antivortex states. 2D Cr(TDZ)$_2$ is an intrinsic bipolar magnetic semiconductor where half-metallic conduction with switchable spin-polarization direction can be induced by applying a gate voltage. Besides, the symmetry of the little group C$_4$ of lattice structure endows 2D Cr(TDZ)$_2$ with topological nodal lines and a quadratic nodal point in the Brillouin zone near the Fermi level.

preprint2021arXiv

Two-Dimensional Bipolar Magnetic Semiconductor with High Curie Temperature and Electrically Controllable Spin Polarization Realized in Exfoliated Cr(pyrazine)$_2$ Monolayer

Exploring two-dimensional (2D) magnetic semiconductors with room temperature magnetic ordering and electrically controllable spin polarization is a highly desirable but challenging task for nanospintronics. Here, through first principles calculations, we propose to realize such a material by exfoliating the recently synthesized organometallic layered crystal Li$_{0.7}$[Cr(pyz)$_2$]Cl$_{0.7}$0.25$\cdot$(THF) (pyz = pyrazine, THF = tetrahydrofuran) [Science 370, 587 (2020)]. The feasibility of exfoliation is confirmed by the rather low exfoliation energy of 0.27 J/m$^2$, even smaller than that of graphite. In exfoliated Cr(pyz)$_2$ monolayer, each pyrazine ring grabs one electron from the Cr atom to become a radical anion, then a strong $d$-$p$ direct exchange magnetic interaction emerges between Cr cations and pyrazine radicals, resulting in room temperature ferrimagnetism with a Curie temperature of 342 K. Moreover, Cr(pyz)$_2$ monolayer is revealed to be an intrinsic bipolar magnetic semiconductor where electrical doping can induce half-metallic conduction with controllable spin-polarization direction.