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Xingxing Li

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cond-mat.mtrl-sci Computer Vision cond-mat.mes-hall cond-mat.str-el physics.chem-ph physics.comp-ph

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preprint2025arXiv

Bringing The Consistency Gap: Explicit Structured Memory for Interleaved Image-Text Generation

Existing Vision Language Models (VLMs) often struggle to preserve logic, entity identity, and artistic style during extended, interleaved image-text interactions. We identify this limitation as "Multimodal Context Drift", which stems from the inherent tendency of implicit neural representations to decay or become entangled over long sequences. To bridge this gap, we propose IUT-Plug, a model-agnostic Neuro-Symbolic Structured State Tracking mechanism. Unlike purely neural approaches that rely on transient attention maps, IUT-Plug introduces the Image Understanding Tree (IUT) as an explicit, persistent memory module. The framework operates by (1) parsing visual scenes into hierarchical symbolic structures (entities, attributes, and relationships); (2) performing incremental state updates to logically lock invariant properties while modifying changing elements; and (3) guiding generation through topological constraints. We evaluate our approach on a novel benchmark comprising 3,000 human-annotated samples. Experimental results demonstrate that IUT-Plug effectively mitigates context drift, achieving significantly higher consistency scores compared to unstructured text-prompting baselines. This confirms that explicit symbolic grounding is essential for maintaining robust long-horizon consistency in multimodal generation.

preprint2022arXiv

Ferromagnetic Negative Charge-Transfer Insulator: from Theoretical Proposal to Material Realization

Here we propose another type of ferromagnetic semiconductors: ferromagnetic negative charge-transfer insulator (FNCTI). In FNCTI, the negative charge-transfer states strongly enhance the ferromagnetic (FM) exchange interactions and the orbital hybridization gap permits the magnetic molecular orbitals as the underlying magnetic units rather than local atomic orbitals. Thus the FM exchange interactions are rather strong and decay slowly due to the large spearding of magnetic molecular orbitals. This is distinct from the superexchange mechanism where FM exchange interactions are quite weak as summarized in the well-known Goodenough-Kanamori-Anderson semi-empirical rules.Through first-principle calculations with the hybrid functional, PbO-type CrAs monolayer is mapped out to be a FNCTI, which possesses a band gap $\sim$ 0.35 eV, FM nearest-/next-nearest-neighbor exchange coupling strength $\sim$ 57/40 meV, and a high $T_c$ $\sim$ 1500 K respectively. It is believed that the existence of FNCTI validates the long-pending hypothesis by D. I. Khomskii and G. A. Sawatzky in 1997 [Solid State Commun. 102, 87 (1997)].

preprint2022arXiv

Two-Dimensional Semiconducting Metal Organic Frameworks with Auxetic Effect, Room Temperature Ferrimagnetism, Chiral Ferroelectricity, Bipolar Spin Polarization and Topological Nodal Lines/Points

Two-dimensional (2D) semiconductors integrated with two or more functions are the cornerstone for constructing multifunctional nanodevices, but remain largely limited. Here, by tuning the spin state of organic linkers and the symmetry/topology of crystal lattice, we predict a class of unprecedented multifunctional semiconductors in 2D Cr(II) five-membered heterocyclic metal organic frameworks that simultaneously possess auxetic effect, room temperature ferrimagnetism, chiral ferroe-lectricity, electrically reversible spin polarization and topological nodal lines/points. Taking 2D Cr(TDZ)$_2$ (TDZ=1.2.5-thiadiazole) as an exemplification, the auxetic effect is produced by the anti-tetra-chiral lattice structure. The high temperature ferrimagnetism originates from the strong d-p direct magnetic exchange interaction between Cr cations and TDZ doublet radical anions. Meanwhile, the clockwise-counterclockwise alignment of TDZ' dipoles results in unique 2D chiral ferroelectricity with atomic-scale vortex-antivortex states. 2D Cr(TDZ)$_2$ is an intrinsic bipolar magnetic semiconductor where half-metallic conduction with switchable spin-polarization direction can be induced by applying a gate voltage. Besides, the symmetry of the little group C$_4$ of lattice structure endows 2D Cr(TDZ)$_2$ with topological nodal lines and a quadratic nodal point in the Brillouin zone near the Fermi level.

preprint2021arXiv

Two-Dimensional Bipolar Magnetic Semiconductor with High Curie Temperature and Electrically Controllable Spin Polarization Realized in Exfoliated Cr(pyrazine)$_2$ Monolayer

Exploring two-dimensional (2D) magnetic semiconductors with room temperature magnetic ordering and electrically controllable spin polarization is a highly desirable but challenging task for nanospintronics. Here, through first principles calculations, we propose to realize such a material by exfoliating the recently synthesized organometallic layered crystal Li$_{0.7}$[Cr(pyz)$_2$]Cl$_{0.7}$0.25$\cdot$(THF) (pyz = pyrazine, THF = tetrahydrofuran) [Science 370, 587 (2020)]. The feasibility of exfoliation is confirmed by the rather low exfoliation energy of 0.27 J/m$^2$, even smaller than that of graphite. In exfoliated Cr(pyz)$_2$ monolayer, each pyrazine ring grabs one electron from the Cr atom to become a radical anion, then a strong $d$-$p$ direct exchange magnetic interaction emerges between Cr cations and pyrazine radicals, resulting in room temperature ferrimagnetism with a Curie temperature of 342 K. Moreover, Cr(pyz)$_2$ monolayer is revealed to be an intrinsic bipolar magnetic semiconductor where electrical doping can induce half-metallic conduction with controllable spin-polarization direction.

preprint2016arXiv

A many-body GW+BSE investigation of electronic and optical properties of C2N

A newly synthesized layered material C2N was investigated based on many- body perturbation theory using GW plus Bethe-Salpeter equation approach. The electronic band gap was determined to be ranging from 3.75 to 1.89 eV from monolayer to bulk. Significant GW quasiparticle corrections, of more than 0.9 eV, to the Kohn-Sham band gaps from the local density approximation (LDA) calculations are found. Strong excitonic effects play a crucial role in optical properties. We found large binding energies of greater than 0.6 eV for bound excitons in few-layer C2N, while it is only 0.04 eV in bulk C2N. All the structures exhibit strong and broad optical absorption in the visible light region, which makes C2N a promising candidate for solar energy conversion, such as photocatalytic water splitting.

preprint2016arXiv

δ-phosphorene: a two dimensional material with high negative Poisson's ratio

As a basic mechanical parameter, Poisson's ratio (ν) measures the mechanical responses of solids against external loads. In rare cases, materials have a negative Poisson's ratio (NPR), and present an interesting auxetic effect. That is, when a material is stretched in one direction, it will expand in the perpendicular direction. To design modern nanoscale electromechanical devices with special functions, two dimensional (2D) auxetic materials are highly desirable. In this work, based on first principles calculations, we rediscover the previously proposed δ-phosphorene (δ-P) nanosheets [Jie Guan et al., Phys. Rev. Lett. 2014, 113, 046804] are good auxetic materials with a high NPR. The results show that the Young's modulus and Poisson's ratio of δ-P are all anisotropic. The NPR value along the grooved direction is up to -0.267, which is much higher than the recently reported 2D auxetic materials. The auxetic effect of δ-P originated from its puckered structure is robust and insensitive to the number of layers due to weak interlayer interactions. Moreover, δ-P possesses good flexibility because of its relatively small Young's modulus and high critical crack strain. If δ-P can be synthesized, these extraordinary properties would endow it great potential in designing low dimensional electromechanical devices.

preprint2014arXiv

Electrical Control of Carriers Spin Orientation in FeVTiSi Heusler Alloy

The direct control of carriers spin by electric field under room temperature is one of the most important challenges in the field of spintronics. For this purpose, we here propose a quaternary Heusler alloy FeVTiSi. Based on first principles calculations, FeVTiSi alloy is found to be an intrinsic bipolar magnetic semiconductor in which the valence band and conduction band approach the Fermi level through opposite spin channels. Thus FeVTiSi alloy can conduct completely spin-polarized currents with tunable spin-polarization direction simply by applying a gate voltage. Furthermore, by Monte Carlo simulations based on the classical Heisenberg Hamiltonian, the Curie temperature of FeVTiSi alloy is predicted to be as high as 1293 K, far above the room temperature. The bipolar magnetic semiconducting character and the high Curie temperature endow the FeVTiSi alloy great potentials in developing electrically controllable spintronic devices working at room temperature.

preprint2013arXiv

Control of Spin in La(Mn,Zn)AsO Alloy by Carrier Doping

The control of spin without magnetic field is one of challenges in developing spintronic devices. In an attempt to solve this problem, we proposed a novel hypothetic LaMn0.5Zn0.5AsO alloy from two experimentally synthesized rare earth element transition metal arsenide oxides, i.e. LaMnAsO and LaZnAsO. On the basis of the first-principles calculations with strong-correlated correction, we found that the LaMn0.5Zn0.5AsO alloy is an antiferromagnetic semiconductor at ground state, while bipolar magnetic semiconductor at ferromagnetic state. Both electron and hole doping in the LaMn0.5Zn0.5AsO alloy induces the transition from antiferromagnetic to ferromagnetic, as well as semiconductor to half metal. In particular, the spin-polarization direction is switchable depending on the doped carrier's type. As carrier doping can be realized easily in experiment by applying a gate voltage, the LaMn0.5Zn0.5AsO alloy stands for a promising spintronic material to generate and control the spin-polarized carriers with electric field.

preprint2012arXiv

Bipolar Magnetic Semiconductors: A New Class of Spintronics Materials

Electrical control of spin polarization is very desirable in spintronics, since electric field can be easily applied locally in contrast with magnetic field. Here, we propose a new concept of bipolar magnetic semiconductor (BMS) in which completely spin-polarized currents with reversible spin polarization can be created and controlled simply by applying a gate voltage. This is a result of the unique electronic structure of BMS, where the valence and conduction bands possess opposite spin polarization when approaching the Fermi level. Our band structure and spin-polarized electronic transport calculations on semi-hydrogenated single-walled carbon nanotubes confirm the existence of BMS materials and demonstrate the electrical control of spin-polarization in them.