Paper detail

Electrical Control of Carriers Spin Orientation in FeVTiSi Heusler Alloy

The direct control of carriers spin by electric field under room temperature is one of the most important challenges in the field of spintronics. For this purpose, we here propose a quaternary Heusler alloy FeVTiSi. Based on first principles calculations, FeVTiSi alloy is found to be an intrinsic bipolar magnetic semiconductor in which the valence band and conduction band approach the Fermi level through opposite spin channels. Thus FeVTiSi alloy can conduct completely spin-polarized currents with tunable spin-polarization direction simply by applying a gate voltage. Furthermore, by Monte Carlo simulations based on the classical Heisenberg Hamiltonian, the Curie temperature of FeVTiSi alloy is predicted to be as high as 1293 K, far above the room temperature. The bipolar magnetic semiconducting character and the high Curie temperature endow the FeVTiSi alloy great potentials in developing electrically controllable spintronic devices working at room temperature.