Researcher profile

Xing Ming

Xing Ming contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author
5works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2022arXiv

In-gap states and strain-tuned band convergence in layered structure trivalent iridate K0.75Na0.25IrO2

Iridium oxides (iridates) provide a good platform to study the delicate interplay between spin-orbit coupling (SOC) interactions, electron correlation effects, Hund's coupling and lattice degree of freedom. However, overwhelming investigations primarily focus on tetravalent (Ir4+, 5d5) and pentavalent (Ir5+, 5d4) iridates, far less attention has been paid to iridates with other valence states. Here, we pay our attention to a less-explored trivalent (Ir3+, 5d6) iridates, K0.75Na0.25IrO2, crystalizing in a triangular lattice with edge-sharing IrO6 octahedra and alkali metal ions intercalated [IrO2]- layers. We theoretically determine the preferred occupied positions of the alkali metal ions from energetic viewpoints and reproduce the experimentally observed semiconducting behavior and nonmagnetic (NM) properties. The SOC interactions play a critical role in the band dispersion, resulting in NM Jeff = 0 states. More intriguingly, our electronic structure not only uncovers the presence of in-gap states and explains the abnormal low activation energy in K0.75Na0.25IrO2, but also predicts the band edge can be effectively modulated by mechanical strain. Especially, the in-gap states feature with enhanced band-convergence characteristics by 6% compressive strain, which will greatly enhance the electrical conductivity of K0.75Na0.25IrO2. Present work sheds new lights on the unconventional electronic structures of the trivalent iridates, indicating its promising application as nanoelectronic and thermoelectric material.

preprint2021arXiv

Pressure-induced structural transition, metallization, and topological superconductivity in PdSSe

Pressure not only provides a powerful way to tune the crystal structure of transition metal dichalcogenides (TMDCs) but also promotes the discovery of exotic electronic states and intriguing phenomena. Structural transitions from the quasi-two-dimensional layered orthorhombic phase to three-dimensional cubic pyrite phase, metallization, and superconductivity under high pressure have been observed experimentally in TMDCs materials PdS2 and PdSe2. Here, we report a theoretical prediction of the pressure-induced evolutions of crystal structure and electronic structure of PdSSe, an isomorphous intermediate material of the orthorhombic PdS2 and PdSe2. A series of pressure-induced structural phase transitions from the layered orthorhombic structure into an intermediate phase, then to a cubic phase are revealed. The intermediate phase features the same structure symmetry as the ambient orthorhombic phase, except for drastic collapsed interlayer distances and striking changes of the coordination polyhedron. Furthermore, the structural phase transitions are accompanied by electronic structure variations from semiconductor to semimetal, which are attributed to bandwidth broaden and orbital-selective mechanisms. Especially, the cubic phase PdSSe is distinct from the cubic PdS2 and PdSe2 materials by breaking inversion and mirror-plane symmetries, but showing similar superconductivity under high pressure, which is originated from strong electron-phonon coupling interactions concomitant with topologically nontrivial Weyl and high-fold Fermions. The intricate interplay between lattice, charge, and orbital degrees of freedom as well as the topologically nontrivial states in these compounds will further stimulate wide interest to explore the exotic physics of the TMDCs materials.

preprint2021arXiv

Stacking effect and Coulomb correlation in layered charge density wave phase of 1T-NbS2

Based on first-principles calculations, we explored the interplay between stacking effect and electron-electron correlation in the layered vdW material of bulk 1T-NbS2 with a 2D charge density wave (CDW) order. Without considering the Coulomb correlation, two energetically favorable out-of-plane stacking configurations are identified: one is a metallic phase with a single-layer stacking pattern, another is a band insulator with a paired-bilayer stacking configuration. Even though the Coulomb correlation is taken into account, the two energetic favorable stacking orders are still far more stable than other stacking orders. Furthermore, increasing the Coulomb interaction, the paired-bilayer stacking configuration transforms from nonmagnetic band insulator to antiferromagnetic insulator, while the single-layer stacking undergoes a Slater-Mott metal-insulator transition, which indicates the non-negligible role of electron-electron correlation interactions. In addition, the electronic structure and magnetic ground state change drastically among different stacking configurations, providing a platform to tune the electronic structures and interlayer magnetic interactions by altering the stacking order. In contrast to the widely accepted scenario of Mott localization as the driving force behind the gap formation in the CDW phase of layered transition metal dichalcogenides, our results not only highlight the crucial role of stacking order in the electronic structures of 1T-NbS2, but also shed fresh light on the distinct effects of Coulomb interaction in different stacking arrangements.

preprint2020arXiv

Structural transition, metallization and superconductivity in quasi 2D layered PdS$_2$ under compression

Based on first-principles simulations and calculations, we explore the evolution of crystal structure, electronic structure and transport properties of quasi 2D layered PdS2 under uniaxial stress and hydrostatic pressure. The coordination of the Pd ions plays crucial roles in the structural transition, electronic structure and transport properties of PdS2. An interesting ferroelastic phase transition with lattice reorientation is revealed under uniaxial compressive stress, which originates from the bond reconstructions of the unusual PdS4 square-planar coordination. By contrast, the layered structure transforms to 3D cubic pyrite-type structure under hydrostatic pressure. In contrast to the experimental proposed coexistence of layered PdS2-type structure with cubic pyrite-type structure at intermediate pressure range, we predict that the compression-induced intermediate phase showing the same structural symmetry with the ambient phase, except of sharply contracted interlayer-distances. The coordination environments of the Pd ions have changed from square-planar to distorted octahedra in the intermediate phase, which results in the bandwidth broaden and orbital-selective metallization. In addition, the superconductivity comes from the cubic pyrite-type structure protected topological nodal-line states. The strong correlations between structural transition, electronic structure and transport properties in PdS2 provide a platform to study the fundamental physics of the interplay between crystal structure and transport behavior, and the competition between diverse phases.

preprint2019arXiv

Valence transition in topological Kondo insulator

We investigate the valence transition in three-dimensional topological Kondo insulator through slave-boson analysis of periodic Anderson model. By including the effect of intra-atomic Coulomb correlation $U_{fc}$ between conduction and local electrons, we find a first-order valence transition from Kondo region to mixed valence upon ascending of local level above a critical $U_{fc}$, and this valence transition usually occurs very close to or simultaneously with a topological transition. Near the parameter region of zero-temperature valence transition, rise of temperature can generate a thermal valence transition from mixed valence to Kondo region, accompanied by a first-order topological transition. Remarkably, above a critical $U_{fc}$ which is considerable smaller than that generating paramagnetic valence transition, the original continuous antiferromagnetic transition is shifted to first order one, at which a discontinuous valence shift takes place. Upon increased $U_{fc}$, the paramagnetic valence transition approaches then converges with the first-order antiferromagnetic transition, leaving an significant valence shift on the magnetic boundary. The continuous antiferromagnetic transition, first-order antiferromagnetic transition, paramagnetic valence transition and topological transitions are all summarized in a global phase diagram. Our proposed exotic transition processes can help to understand the thermal valence variation as well as the valence shift around the pressure-induced magnetic transition in topological Kondo insulator candidates and in other heavy-fermion systems.