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Carmine Autieri

Carmine Autieri contributes to research discovery and scholarly infrastructure.

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Published work

26 published item(s)

preprint2024arXiv

Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology

We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundary, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region.

preprint2023arXiv

Altermagnetic surface states: towards the observation and utilization of altermagnetism in thin films, interfaces and topological materials

The altermagnetism influences the electronic states allowing the presence of non-relativistic spinsplittings. Since altermagnetic spin-splitting is present along specific k-paths of the 3D Brillouin zone, we expect that the altermagnetic surface states will be present on specific surface orientations. We unveil the properties of the altermagnetic surface states considering three representative space groups: tetragonal, orthorhombic and hexagonal. We calculate the 2D projected Brillouin zone from the 3D Brillouin zone. We study the surfaces with their respective 2D Brillouin zones establishing where the spin-splittings with opposite sign merge annihilating the altermagnetic properties and on which surfaces the altermagnetism is preserved. Looking at the three principal surface orientations, we find that for several cases two surfaces are blind to the altermagnetism, while the altermagnetism survives for one surface orientation. Which surface preserves the altermagnetism depends also on the magnetic order. We show that an electric field orthogonal to the blind surface can activate the altermagnetism. Our results predict which surfaces to cleave in order to preserve altermagnetism in surfaces or interfaces and this paves the way to observe non-relativistic altermagnetic spin-splitting in thin films via spin-resolved ARPES and to interface the altermagnetism with other collective modes. We open future perspectives for the study of altermagnetic effects on the trivial and topological surface states.

preprint2023arXiv

Spin-orbit insulating phase in SnTe cubic nanowires: consequences on the topological surface states

We investigate the electronic, structural and topological properties of the SnTe and PbTe cubic nanowires using ab-initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the nanowires thicknesses observed experimentally. Finite-size effects in the ultra-thin limit produce an electric quadrupole and associated structural distortions, these distortions increase the band gap but they get reduced with the size of the nanowires and become less and less relevant. Ultrathin SnTe cubic nanowires are trivial band gap insulators, we demonstrate that by increasing the thickness there is an electronic transition to a spin-orbit insulating phase due to trivial surface states in the regime of thin nanowires. These trivial surface states with a spin-orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thick nanowires, we should observe the transition to the topological crystalline insulating phase with the presence of two massive surface Dirac fermions hybridized with the persisting trivial surface states. Therefore, we have the co-presence of massive Dirac surface states and trivial surface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowires are trivial insulators below the critical thickness tc1=10 nm, and they become spin-orbit insulators between tc1=10 nm and tc2=17 nm, while they transit to the topological phase above the critical thickness of tc2=17 nm. These critical thickness values are in the range of the typical experimental thicknesses, making the thickness a relevant parameter for the synthesis of topological cubic nanowires. Pb(1-x)Sn(x)Te nanowires would have both these critical thicknesses tc1 and tc2 at larger values depending on the doping concentration.

preprint2022arXiv

Dimensionality of the superconductivity in the transition metal pnictide WP

We report theoretical and experimental results on the transition metal pnictide WP. The theoretical outcomes based on tight-binding calculations and density functional theory indicate that WP is a three-dimensional superconductor with an anisotropic electronic structure and nonsymmorphic symmetries. On the other hand, magnetoresistance experimental data and the analysis of superconducting fluctuations of the conductivity in external magnetic field indicate a weakly anisotropic three-dimensional superconducting phase.

preprint2022arXiv

Emergence of Rashba splitting and spin-valley properties in Janus MoGeSiP2As2 and WGeSiP2As2 monolayers

First-principles calculations are performed to study the structural stability and spintronics properties of Janus MoGeSiP2As2 and WGeSiP2As2 monolayers. The high cohesive energies and the stable phonon modes confirm that both these structures are experimentally accessible. In contrast to pristine MoSi2P4, the Janus monolayers demonstrate reduced direct bandgaps and large spin-split states at K/-K. In addition, their spin textures exposed that breaking the mirror symmetry brings Rashba-type spin splitting in the systems which can be increased by using higher atomic spin-orbit coupling. The large valley spin splitting together with the Rashba splitting in these Janus monolayer structures can make a remarkable contribution to semiconductor valleytronics and spintronics.

preprint2022arXiv

Exploring the Structural Stability, Electronic and Thermal Attributes of synthetic 2D Materials and their Heterostructures

Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find that these heterostructures are energetically and dynamically stable due to high cohesive and binding energies, and no negative frequencies in the phonon spectra. The XSi2N4 (X= Ti, Mo, W) monolayers, the TiSi2N4/MoSi2N4-LH, MoSi2N4/WSi2N4-LH, and MoSi2N4/WSi2N4-VH possess a semiconducting nature with an indirect band gap ranging from 0.30 to 2.60 eV. At room temperature, the Cv values are found to be between 100 and 416 J/K.mol for the monolayers and their heterostructures, suggesting the better ability to retain heat with respect to transition metal dichalcogenides. Our study unveils the excellent attributes of XSi2N4 2D monolayers and their heterostructures, proposing them as potential candidates in nanoelectronics and thermoelectric applications.

preprint2022arXiv

In-gap states and strain-tuned band convergence in layered structure trivalent iridate K0.75Na0.25IrO2

Iridium oxides (iridates) provide a good platform to study the delicate interplay between spin-orbit coupling (SOC) interactions, electron correlation effects, Hund's coupling and lattice degree of freedom. However, overwhelming investigations primarily focus on tetravalent (Ir4+, 5d5) and pentavalent (Ir5+, 5d4) iridates, far less attention has been paid to iridates with other valence states. Here, we pay our attention to a less-explored trivalent (Ir3+, 5d6) iridates, K0.75Na0.25IrO2, crystalizing in a triangular lattice with edge-sharing IrO6 octahedra and alkali metal ions intercalated [IrO2]- layers. We theoretically determine the preferred occupied positions of the alkali metal ions from energetic viewpoints and reproduce the experimentally observed semiconducting behavior and nonmagnetic (NM) properties. The SOC interactions play a critical role in the band dispersion, resulting in NM Jeff = 0 states. More intriguingly, our electronic structure not only uncovers the presence of in-gap states and explains the abnormal low activation energy in K0.75Na0.25IrO2, but also predicts the band edge can be effectively modulated by mechanical strain. Especially, the in-gap states feature with enhanced band-convergence characteristics by 6% compressive strain, which will greatly enhance the electrical conductivity of K0.75Na0.25IrO2. Present work sheds new lights on the unconventional electronic structures of the trivalent iridates, indicating its promising application as nanoelectronic and thermoelectric material.

preprint2022arXiv

Limited ferromagnetic interactions in monolayers of MPS$_3$ (M=Mn, Ni)

We present a systematic study of the electronic and magnetic properties of two-dimensional ordered alloys, consisting of two representative hosts (MnPS$_3$ and NiPS$_3$) of transition metal phosphorus trichalcogenides doped with $3d$ elements. For both hosts our DFT+U calculations are able to qualitatively reproduce the ratios and signs of all experimentally observed magnetic couplings. The relative strength of all antiferromagnetic exchange couplings, both in MnPS$_3$ as well as in NiPS$_3$, can successfully be explained using an effective direct exchange model: they reveal that the third-neighbor exchange dominates in NiPS$_3$ due to the filling of the $t_{2g}$ subshell, whereas for MnPS$_3$ the first neighbor exchange is prevailed owing to the presence of the $t_{2g}$ magnetism. On the other hand, the nearest neighbor ferromagnetic coupling in NiPS$_3$ can only be explained using a more complex superexchange model and is (also) largely triggered by the absence of the $t_{2g}$ magnetism. For the doped systems, the DFT+U calculations revealed that magnetic impurities do not affect the magnetic ordering observed in the pure phases and thus in general in these systems ferromagnetism may not be easily induced by such a kind of elemental doping. However, unlike for the hosts, the first and second (dopant-host) exchange couplings are of similar order of magnitude. This leads to frustration in case of antiferromagnetic coupling and may be one of the reasons of the observed lower magnetic ordering temperature of the doped systems.

preprint2022arXiv

Strain Modulated Electronic and Optical Properties of Laterally Stitched MoSi2N4/XSi2N4 (X=W, Ti) 2D Heterostructures

We used first-principles calculations to investigate the laterally stitched monolayered MoSi2N4/XSi2N4 (X=W, Ti) 2D heterostructures. The structural stability of such heterostructures is confirmed by the phonon spectra exhibiting no negative frequencies. From the electronic band structures, the MoSi2N4/WSi2N4-lateral heterostructure (MWLH) shows semiconducting nature with an indirect bandgap of 2.35 eV, while the MoSi2N4/TiSi2N4-lateral heterostructure (MTLH) revealed metallic behavior. Moreover, the effect of biaxial strain on the electronic and optical properties of MWLH is studied, which indicated substantial modifications in their electronic and optical spectra. In particular, an indirect to direct bandgap semiconducting transition can be achieved in MWLH via compressive strain. Besides, the absorbance, transmittance and reflectance spectra can effectively be tuned by means of biaxial strain. Our findings provide insights into the strain engineering of electronic and optical features, which could pave the way for future nano- and optoelectronic applications.

preprint2022arXiv

Superconductivity induced by structural reorganization in the electron-doped cuprate Nd$_{2-x}$Ce$_x$CuO$_4$

Electron-doped and hole-doped superconducting cuprates exhibit a symmetric phase diagram as a function of doping. This symmetry is however only approximate. Indeed, electron-doped cuprates become superconductors only after a specific annealing process: This annealing affects the oxygen content by only a tiny amount, but has a dramatic impact on the electronic properties of the sample. Here we report the occurrence of superconductivity in oxygen-deficient Nd$_{2-x}$Ce$_x$CuO$_4$ thin films grown in an oxygen-free environment, after annealing in pure argon flow. As verified by x-ray diffraction, annealing induces an increase of the interlayer distance between CuO$_2$ planes in the crystal structure. Since this distance is correlated to the concentration of oxygens in apical positions, and since oxygen content cannot substantially increase during annealing, our experiments indicate that the superconducting phase transition has to be ascribed to a migration of oxygen ions to apical positions during annealing. Moreover, as we confirm via first-principles density functional theory calculations, the changes in the structural and transport properties of the films can be theoretically described by a specific redistribution of the existing oxygen ions at apical positions with respect to CuO$_2$ planes, which remodulates the electronic band structure and suppresses the antiferromagnetic order, allowing the emergence of hole superconductivity.

preprint2022arXiv

Superexchange dominates in magnetic topological insulators

It has been suggested that the enlarged spin susceptibility in topological insulators, described by Van Vleck's formalism, accounts for the ferromagnetism of bismuth-antimony topological chalcogenides doped with transition metal impurities. In contrast, earlier studies of HgTe and related topological systems pointed out that the interband analog of the Ruderman-Kittel-Kasuya-Yosida interaction (the Bloembergen-Rowland mechanism) leads to antiferromagnetic coupling between pairs of localized spins. Here, we critically revisit these two approaches, show their shortcomings, and elucidate why the magnitude of the interband contribution is small even in topological systems. From the proposed theoretical approach and our computational studies of magnetism in Mn-doped HgTe and CdTe, we conclude that, in the absence of band carriers, the superexchange dominates, and its sign depends on the coordination and charge state of magnetic impurities rather than on the topological class of the host material.

preprint2022arXiv

Switchable large-gap quantum spin Hall state in two-dimensional MSi$_2$Z$_4$ materials class

Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing fundamental science questions and device applications. Finding viable materials that host such topological states, however, remains a challenge. Here by using in-depth first-principles theoretical modeling, we predict large bandgap QSH insulators in recently bottom-up synthesized two-dimensional (2D) MSi$_2$Z$_4$ (M = Mo or W and Z = P or As) materials family with $1T^\prime$ structure. A structural distortion in the $2H$ phase drives a band inversion between the metal (Mo/W) $d$ and $p$ states of P/As to realize spinless Dirac cone states without spin-orbit coupling. When spin-orbit coupling is included, a hybridization gap as large as $\sim 204$ meV opens up at the band crossing points, realizing spin-polarized conducting edge states with nearly quantized spin Hall conductivity. We also show that the inverted band gap is tunable with a vertical electric field which drives a topological phase transition from the QSH to a trivial insulator with Rashba-like edge states. Our study identifies 2D MSi$_2$Z$_4$ materials family with $1T^\prime$ structure as large bandgap, tunable QSH insulators with protected spin-polarized edge states and large spin-Hall conductivity.

preprint2022arXiv

Topological Lifshitz transition in Weyl semimetal NbP decorated with heavy elements

Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cleaving planes is different: P-terminated surface shows spoon and bow tie shaped fingerprints, whereas these shapes are not present in Nb-terminated surfaces. ARPES studies show that even 1 monolayer (ML) of Pb causes topological quantum Lifshitz transition (TQLT) in P- and Nb-terminated surfaces. Deposited Pb 5d electrons have wide extended atomic orbitals which leads to strong hybridization with Pb-terminated surface and a corresponding shift in the Fermi energy. Nb has less capability to perturb the system than Pb because Nb has weaker spin-orbit coupling than Pb. Nb-terminated surface subjected to surface decoration with approximately 1.3 ML of Nb shows no dramatic modification in the Fermi surface. In the case of Nb decorated P-terminated surface, deposition of approximately 1 ML modifies the electronic structure of NbP and it is on the verge of TQLT. Despite the strong spin-orbit and strong hybridization of the heavy elements on the surface, it is possible to observe the TQLT of the surface states thanks to the robustness of the bulk topology.

preprint2022arXiv

Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands

In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced three-dimensional flat bands at the Fermi level without requiring doping, when fabricated, for instance, as core-shell nanowires. In contrast, HgTe/HgSe short-period superlattices are found to harbor a rich phase diagram with a plethora of topological phases. Notably, the unstrained superlattice realizes an ideal Weyl semimetal with Weyl points situated at the Fermi level. A small-gap topological insulator with multiple band inversions can be obtained by tuning the volume: under compressive uniaxial strain, the material transitions sequentially into a Dirac semimetal to a nodal-line semimetal, and finally into a topological insulator with a single band inversion.

preprint2021arXiv

Double-helix magnetic order in CrAs with Pnma space group

The transition metal pnictide CrAs exhibits superconductivity in the vicinity of a helimagnetic phase, where it has been found that the propagation vector is parallel to the c axis and the magnetic moments lie in the ab plane. Here we use ab initio calculations to study the magnetic interactions in the material. Mapping onto a Heisenberg Hamiltonian, we calculate the magnetic exchanges by using LDA+U calculations and we unveil the origin of the magnetic frustration. Finally, we reproduce the double helix magnetic order with a propagation vector Q = (0, 0, 0.456) and we obtain the magnetic transition temperature TN through Monte-Carlo simulations of the specific heat. Due to the limitations of the use of the Heisenberg Hamiltonian for itinerant magnetic systems, the theoretical TN underestimated the experimental value of the pure CrAs. However, our results are in good agreement with those found for the alloy CrAs0.5Sb0.5 belonging to the same space group, showing that our result can describe this material class.

preprint2021arXiv

Magnetic instabilities in quasi-one-dimensional Cr-based material

The magnetic response of a K2Cr3As3 sample has been studied by means of dc magnetization measurements as a function of magnetic field (H) at different temperatures ranging from 5 K up to 300 K. Looking at the magnetic hysteresis loops m(H), a diamagnetic behavior of the sample has been inferred at temperatures higher than 60 K, whereas at lower temperatures the sample shows a hysteresis loop compatible with the presence of ferrimagnetism. Moreover, several spike-like magnetization jumps, both positive and negative, have been observed at certain fields in the range -1000 Oe < H < 1000 Oe, regardless of the temperature considered. The field position of the magnetization jumps has been studied at different temperatures, and their distribution can be described by a Lorentzian curve.

preprint2021arXiv

Pressure-induced structural transition, metallization, and topological superconductivity in PdSSe

Pressure not only provides a powerful way to tune the crystal structure of transition metal dichalcogenides (TMDCs) but also promotes the discovery of exotic electronic states and intriguing phenomena. Structural transitions from the quasi-two-dimensional layered orthorhombic phase to three-dimensional cubic pyrite phase, metallization, and superconductivity under high pressure have been observed experimentally in TMDCs materials PdS2 and PdSe2. Here, we report a theoretical prediction of the pressure-induced evolutions of crystal structure and electronic structure of PdSSe, an isomorphous intermediate material of the orthorhombic PdS2 and PdSe2. A series of pressure-induced structural phase transitions from the layered orthorhombic structure into an intermediate phase, then to a cubic phase are revealed. The intermediate phase features the same structure symmetry as the ambient orthorhombic phase, except for drastic collapsed interlayer distances and striking changes of the coordination polyhedron. Furthermore, the structural phase transitions are accompanied by electronic structure variations from semiconductor to semimetal, which are attributed to bandwidth broaden and orbital-selective mechanisms. Especially, the cubic phase PdSSe is distinct from the cubic PdS2 and PdSe2 materials by breaking inversion and mirror-plane symmetries, but showing similar superconductivity under high pressure, which is originated from strong electron-phonon coupling interactions concomitant with topologically nontrivial Weyl and high-fold Fermions. The intricate interplay between lattice, charge, and orbital degrees of freedom as well as the topologically nontrivial states in these compounds will further stimulate wide interest to explore the exotic physics of the TMDCs materials.

preprint2021arXiv

Spatially modulated, orbital selective ferromagnetism in La$_5$Co$_2$Ge$_3$

We present density functional theory calculations for low-$T_c$ metallic ferromagnet La$_5$Co$_2$Ge$_3$ at ambient and applied pressures. Our investigations reveal that the system is a quasi-one-dimensional ferromagnet with a peculiar coexistence of two different orbital-selective magnetic moments at two crystallographically inequivalent cobalt atoms, Co1 and Co2. Namely, due to different crystal-field splitting, the magnetic moment of Co1 atoms predominantly derives from $d_{xz}$ orbital whereas of Co2 atoms from $d_{xy}$ orbital. Consequently, Co1 and Co2 atoms develop unequal net magnetic moments, a feature that gives rise to a periodic, spatial modulation of magnetization along crystallographic $c$-direction. The amplitude of the spatial modulation, small at ambient pressure, drastically increases with applied pressure, until Co2 atoms become nonmagnetic. With the help of a toy model mimicking found orbital-selective ferromagnetic order, we demonstrate that the increasing amplitude of spatial modulation provides a consistent interpretation to the recently observed resistivity anomaly emerging at applied pressure identified as the appearance of the {\it new state}. Although, proposed here structural origin of the spatial modulation of magnetic moments in La$_5$Co$_2$Ge$_3$ is an alternative one to the advocated for this material ferromagnetic quantum criticality avoidance, the effects of quantum fluctuations can still play an important role at pressure larger than up-to-date measured 5GPa.

preprint2021arXiv

Stacking effect and Coulomb correlation in layered charge density wave phase of 1T-NbS2

Based on first-principles calculations, we explored the interplay between stacking effect and electron-electron correlation in the layered vdW material of bulk 1T-NbS2 with a 2D charge density wave (CDW) order. Without considering the Coulomb correlation, two energetically favorable out-of-plane stacking configurations are identified: one is a metallic phase with a single-layer stacking pattern, another is a band insulator with a paired-bilayer stacking configuration. Even though the Coulomb correlation is taken into account, the two energetic favorable stacking orders are still far more stable than other stacking orders. Furthermore, increasing the Coulomb interaction, the paired-bilayer stacking configuration transforms from nonmagnetic band insulator to antiferromagnetic insulator, while the single-layer stacking undergoes a Slater-Mott metal-insulator transition, which indicates the non-negligible role of electron-electron correlation interactions. In addition, the electronic structure and magnetic ground state change drastically among different stacking configurations, providing a platform to tune the electronic structures and interlayer magnetic interactions by altering the stacking order. In contrast to the widely accepted scenario of Mott localization as the driving force behind the gap formation in the CDW phase of layered transition metal dichalcogenides, our results not only highlight the crucial role of stacking order in the electronic structures of 1T-NbS2, but also shed fresh light on the distinct effects of Coulomb interaction in different stacking arrangements.

preprint2020arXiv

Structural transition, metallization and superconductivity in quasi 2D layered PdS$_2$ under compression

Based on first-principles simulations and calculations, we explore the evolution of crystal structure, electronic structure and transport properties of quasi 2D layered PdS2 under uniaxial stress and hydrostatic pressure. The coordination of the Pd ions plays crucial roles in the structural transition, electronic structure and transport properties of PdS2. An interesting ferroelastic phase transition with lattice reorientation is revealed under uniaxial compressive stress, which originates from the bond reconstructions of the unusual PdS4 square-planar coordination. By contrast, the layered structure transforms to 3D cubic pyrite-type structure under hydrostatic pressure. In contrast to the experimental proposed coexistence of layered PdS2-type structure with cubic pyrite-type structure at intermediate pressure range, we predict that the compression-induced intermediate phase showing the same structural symmetry with the ambient phase, except of sharply contracted interlayer-distances. The coordination environments of the Pd ions have changed from square-planar to distorted octahedra in the intermediate phase, which results in the bandwidth broaden and orbital-selective metallization. In addition, the superconductivity comes from the cubic pyrite-type structure protected topological nodal-line states. The strong correlations between structural transition, electronic structure and transport properties in PdS2 provide a platform to study the fundamental physics of the interplay between crystal structure and transport behavior, and the competition between diverse phases.

preprint2019arXiv

A minimal tight-binding model for the quasi-one-dimensional superconductor K2Cr3As3

We present a systematic derivation of a minimal five-band tight-binding model for the description of the electronic structure of the recently discovered quasi one-dimensional superconductor K2Cr3As3. Taking as a reference the density-functional theory (DFT) calculation, we use the outcome of a Lowdin procedure to refine a Wannier projection and fully exploit the predominant weight at the Fermi level of the states having the same symmetry of the crystal structure. Such states are described in terms of five atomic-like d orbitals: four planar orbitals, two dxy and two dx2-y2, and a single out-of-plane one, dz2 . We show that this minimal model reproduces with great accuracy the DFT band structure in a broad energy window around the Fermi energy. Moreover, we derive an explicit simplified analytical expression of such model, which includes three nearest-neighbor hopping terms along the z direction and one nearest-neighbor term within the xy plane. This model captures very efficiently the energy spectrum of the system and, consequently, can be used to study transport properties, superconductivity and dynamical effects in this novel class of superconductors.

preprint2019arXiv

Anomalous Hall effect in antiferromagnetic/non-magnetic interfaces

We report a combined theoretical and experimental investigation of magnetic proximity and Hall transport in Pt/Cr bilayers. Density functional theory indicates that an interfacial magnetization can be induced in the Pt layer and a strong magnetocrystalline anisotropy with an easy axis out of plane arises in the antiferromagnet. A signal ascribed to the anomalous Hall effect is detected and associated to the interface between Pt and Cr layers. We show that this effect originates from the combination of proximity-induced magnetization and a nontrivial topology of the band structure at the interface.

preprint2018arXiv

Optimizing the tight-binding parametrization of the quasi-one-dimensional superconductor K2Cr3As3

We study the tight-binding dispersion of the recently discovered superconductor K2Cr3As3, obtained from Wannier projection of Density Functional Theory (DFT) results. In order to establish quantitatively the actual degree of quasi-one dimensionality of this compound, we analyze the electronic band structure for two reduced sets of hopping parameters: one restricted to the Cr-As tubes and another one retaining a minimal number of in-plane hoppings. The corresponding total and local density of states of the compound are also computed with the aim of assessing the tight-binding results with respect to the DFT ones. We find a quite good agreement with the DFT results for the more extended set of hopping parameters, especially for what concerns the orbitals that dominate at the Fermi level. Accordingly, we conclude that one cannot avoid taking into account in-plane hoppings up to the next-nearest-neighbors cells even only to describe correctly the Fermi surface cuts and the populations along the kz direction. Such a choice of a minimal number of hopping parameters directly reflects in the possibility of correctly describing correlations and magnetic interactions.

preprint2016arXiv

Exchange interactions of CaMnO3 in the bulk and at the surface

In this work, we present electronic and magnetic properties of CaMnO3 (CMO) as obtained from ab initio calculations. We identify the preferable magnetic order by means of density functional theory plus Hubbard U calculations and extract the effective exchange parameters (Jij&#39;s) using the magnetic force theorem. We find that the effects of geometrical relaxation at the surface as well as the change of crystal field are very strong and are able to influence the lower energy magnetic configuration. In particular, our analysis reveals that the exchange interaction between the Mn atoms belonging to the surface and the subsurface layers is very sensitive to the structural changes. An earlier study [A. Filippetti and W.E. Pickett, Phys. Rev. Lett. 83, 4184 (1999)] suggested that this coupling is ferromagnetic and gives rise to the spin flip process on the surface of CMO. In our work we confirm their finding for an unrelaxed geometry, but once the structural relaxations are taken into account, this exchange coupling changes its sign. Thus, we suggest that the surface of CMO should have the same G-type antiferromagnetic order as in the bulk. Finally, we show that the suggested SF can be induced in the system by introducing an excess of electrons.

preprint2016arXiv

Gap opening and large spin-orbit splitting in MX2 (M=Mo,W X=S,Se,Te) from the interplay between crystal field and hybridizations: insights from ab-initio theory

By means of first-principles density functional calculations, we study the maximally localized Wannier functions for the 2D transition metal dichalcogenides MX2 (M=Mo,W X=S,Se,Te). We found a M^+4-like ionic charge and a single occupied d-band. The center of the d-like maximally localized Wannier function associated with this band is distributed among three M sites. Part of the energy gap is opened by the crystal field splitting induced by the X^-2-like atoms. We extract the hopping parameters for the Wannier functions and provide a perspective on tight-binding model. From the analysis of the tight binding model, we have found an inversion of the band character between the Gamma and the K points of the Brillouin zone due to the M-M hybridization. The consequence of this inversion is the closure of the gap. The M-X hybridization is the only one that tends to open the gap at every k-point, the change in the M-X and M-M hybridization is the main responsible for the difference in the gap between the different dichalcogenide materials. The inversion of the bands gives rise to different spin-orbit splitting at Gamma and K point in the valence band. The different character of the gap at Gamma and K point offers the chance to manipulate the semiconductive properties of these compounds. For a bilayer system, the hybridizations between the out of plane orbitals and the hybridizations between the in plane orbitals split the valence band respectively at the Gamma and K point. The splitting in the valence band is opened also without spin-orbit coupling and comes from the M-M and X-X hybridization between the two monolayers.

preprint2012arXiv

Structural and electronic properties of Sr2RuO4-Sr3Ru2O7 heterostructure

By means of first-principles calculations we study the structural and electronic properties of a superlattice made of Sr2RuO4 and Sr3Ru2O7 ruthenate oxides. Due to the symmetry mismatch of the two systems a significant structural rearrangement occurs within the superlattice. We find that at the interface the RuO6 octahedra get elongated for the Sr2RuO4 while tend to be compressed for the Sr3Ru2O7 as compared to inner layers and the bulk phases. The positions of the Sr-atoms in the Sr-O layers at the interface are strongly modified and influence the alignment of the Ru atoms with respect to the planar oxygens as well as the Ru-O-Ru in-plane bond angles. Such structural rearrangement leads to a modification of the electronic structure close to the Fermi level. The main changes occurring at the interface and in the inner layers of the heterostructure are analyzed and compared with the bulk phases of the Sr2RuO4 and Sr3Ru2O7 compounds. We show that the positions of the peaks in the density of states close to the Fermi levels get shifted and renormalized in the spectral weight. The balance between the renormalization of the bandwidth of the dxy band and that of the crystal field splitting results into a minor change of the Van Hove singularities position within the superlattice. The effective tight-binding parameters for the 4d Ru bands are determined by means of a maximally localized Wannier functions approach and used to discuss the modification of the electronic structure of the superlattice with respect to the bulk phases. Consequences on the modification of the superconducting and metamagnetic behaviour of the superlattice with respect to the bulk phases are discussed.