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Researcher profile

Xin Ou

Xin Ou contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
quant-phphysics.app-phphysics.ins-detphysics.opticscond-mat.mes-hallcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2025arXiv

Impact of helium ion irradiation on the thermal properties of superconducting nanowire single-photon detectors

SNSPDs are indispensable for applications ranging from quantum information processing to deep-space optical communications, owing to their high detection efficiency, low dark counts, and excellent timing resolution. However, further improving the intrinsic detection efficiency (IDE) remains crucial for optimizing SNSPD performance. Ion irradiation has recently emerged as a powerful post-fabrication method to enhance SNSPD characteristics. Here, we studied the effects of He-ion irradiation on the thermal properties of NbN SNSPDs. We systematically examine the evolution of thermal boundary conductance as a function of ion fluence (0-1.1E17 ions/cm2), observing a 57% decrease from 127 to 54 W/m^2K^4 with increasing fluence, followed by saturation at approximately 9E16 ions/cm2. At this fluence, the minimum hotspot relaxation time measurements indicate a 41% increase, rising from 17 to 24 ps,while the electron-phonon interaction time decreases, with the magnitude of change depending on temperature and sample batch.TEM reveals defect formation at the NbN/SiO2 interface (6-8 nm) and He-bubble formation within the SiO2 layer (30-260 nm), contributing to the extended thermal relaxation time. These irradiation-induced modifications play a key role in enhancing the IDE of the treated devices. We further demonstrate a post-irradiation SNSPD showing a saturated IDE plateau at 2000 nm from 2.7 K to 28 mK, enabled by thermal modifications and a weakly wavelength-dependent avalanche-assisted mechanism. Our findings highlight ion irradiation as a valuable tool for thermal tailoring in SNSPDs and advance the understanding of detection physics and defect engineering in superconducting optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics

Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafer-scale 4H-SiC thin film on insulator (4H-SiCOI) for dense integration of photonic circuits, and in efficient coupling of deterministic quantum emitters that are essential for scalable quantum photonics. Here we demonstrate hybrid integration of self-assembled InGaAs quantum dots (QDs) based single-photon sources (SPSs) with wafer-scale 4H-SiC photonic chips prepared by ion slicing technique. By designing a bilayer vertical coupler, we realize generation and highly efficient routing of single-photon emission in the hybrid quantum photonic chip. Furthermore, we realize a chip-integrated beamsplitter operation for triggered single photons through fabricating a 1x2 multi-mode interferometer (MMI) with a symmetric power splitting ratio of 50:50. The successful demonstration of heterogeneously integrating QDs-based SPSs on 4H-SiC photonic chip prepared by ion slicing technique constitutes an important step toward CMOS-compatible, fast reconfigurable quantum photonic circuits with deterministic SPSs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A 16-channel fiber array-coupled superconducting single-photon detector array with average system detection efficiency over 60% at telecom wavelength

We report a compact, scalable, and high-performance superconducting nanowire single-photon detector (SNSPD) array by using a multichannel optical fiber array-coupled configuration. For single pixels with an active area of 18 um in diameter and illuminated at the telecom wavelength of 1550 nm, we achieved a pixel yield of 13/16 on one chip, an average system detection efficiency of 69% at a dark count rate of 160 cps, a minimum timing jitter of 74 ps, and a maximum count rate of ~40 Mcps. The optical crosstalk coefficient between adjacent channels is better than -60 dB. The performance of the fiber array-coupled detectors is comparable with a standalone detector coupled to a single fiber. Our method is promising for the development of scalable, high-performance, and high-yield SNSPDs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Precise tuning of the superconducting properties of Mn-doped Al films for transition edge sensors by ion-implantation

Magnetic impurities in metallic superconductors are important for both fundamental and applied sciences. In this study, we focused on dilute Mn-doped aluminum (AlMn) films, which are common superconducting materials used to make transition edge sensors (TES). We developed a multi-energy ion-implantation technique to make AlMn films. Compared with frequently used sputtering techniques, ion-implantation provides more precise and reliable control of the Mn doping concentration in the AlMn films.The ion implantation also enables us to quantitatively analyze the superconducting transition temperature curve as a function of the Mn doping concentration. We found that Mn dopants act as magnetic impurities and suppression of superconductivity is counteracted by the antiferromagnetic Ruderman Kittel Kasuya Yosida interaction among Mn dopants. The RKKY interaction can be tuned through defect engineering in the ion-implantation process and through post-implantation annealing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Room-temperature coherent control of implanted defect spins in silicon carbide

Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a type of spin defect in the 4H polytype of SiC generated via hydrogen ion implantation with high-temperature post-annealing, which is different from any known defects. These spin defects can be optically addressed and coherently controlled even at room temperature, and their fluorescence spectrum and optically detected magnetic resonance spectra are different from those of any previously discovered defects. Moreover, the generation of these defects can be well controlled by optimizing the annealing temperature after implantation. These defects demonstrate high thermal stability with coherently controlled electron spins, facilitating their application in quantum sensing and masers under harsh conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, aggressive thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline \b{eta}-Ga2O3 thin films on high thermal conductivity SiC substrates by ion-cutting technique. The thermal boundary conductance (TBC) of the \b{eta}-Ga2O3-SiC interfaces and thermal conductivity of the \b{eta}-Ga2O3 thin films were measured by Time-domain Thermoreflectance (TDTR) to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the \b{eta}-Ga2O3-SiC TBC values increase with decreasing interlayer thickness and the \b{eta}-Ga2O3 thermal conductivity increases more than twice after annealing at 800 oC due to the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high-quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and \b{eta}-Ga2O3 related semiconductor devices.

0 citations0 reviewsNo code linkedOpen access