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Xihong Peng

Xihong Peng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-phcond-mat.mes-hallquant-phcond-mat.str-elphysics.app-ph

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Published work

15 published item(s)

preprint2021arXiv

A new 2D auxetic CN2 nanostructure with high energy density and mechanical strength

The existence of a new two dimensional CN2 structure was predicted using ab-initio molecular dynamics (AIMD) and density-functional theory calculations. It consists tetragonal and hexagonal rings with C-N and N-N bonds arranged in a buckling plane, isostructural to tetrahex-carbon allotrope. It is thermodynamically and kinetically stable suggested by its phonon spectrum and AIMD. This nanosheet has high concentration of N and contains N-N single bonds with an energy density of 6.3 kJ/g, indicating potential applications as high energy density materials. It possesses exotic mechanical properties with negative Poisson's ratio and an anisotropic Young's modulus. The modulus in the zigzag direction is predicted to be 340 N/m, stiffer than h-BN and penta-CN2 sheets and comparable to graphene. Its ideal strength of 28.8 N/m outperforms that of penta-graphene. The material maintains phonon stability upon the application of uniaxial strain up to 10% (13%) in the zigzag (armchair) direction or biaxial strain up to 5%. It possesses a wide indirect HSE band gap of 4.57 eV which is tunable between 3.37 - 4.57 eV through strain. Double-layer structures are also explored. Such unique properties may have potential applications in high energy density materials, nanomechanics and electronics.

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preprint2020arXiv

Enhanced carrier mobility in anisotropic 2D tetrahex-carbon through strain engineering

A recently predicted two dimensional (2D) carbon allotrope, tetrahex-carbon consisting of tetragonal and hexagonal rings, draws research interests due to its unique mechanical and electronic properties. Tetrahex-C shows ultrahigh strength, negative Poisson ratio, a direct band gap and high carrier mobility. In this work, we employ first-principles density-functional theory calculations to explore the directional dependence of electronic properties such as carrier effective mass and mobility in tetrahex-C. Tetrahex-C demonstrates strong anisotropicity in effective mass of charge carrier and therefore its mobility (electric conductance) exhibits a strong orientation preference. More interesting, we find that such unique anisotropic carrier effective mass and mobility can be controlled by simple uniaxial strain. The orientation dependence of effective mass can be dramatically rotated by 90 degrees through applying uniaxial tensile strain beyond ~ 7% (11%) in the armchair direction for the hole (electron). As a result, the intrinsic carrier mobility in tetrahex-C is significantly enhanced. The results are useful for potential electronic and mechanical applications in tetrahex-C.

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preprint2019arXiv

Auxetic tetrahex-carbon with ultrahigh strength and direct band gap

Tetrahex-carbon is a recently predicted two dimensional (2D) carbon allotrope which is composed of tetragonal and hexagonal rings. Unlike flat graphene, this new 2D carbon structure is buckled, possesses a direct band gap ~ 2.6 eV and high carrier mobility with anisotropic feature. In this work, we employ first-principles density-functional theory calculations to explore mechanical properties of tetrahex-C under uniaxial tensile strain. We find that tetrahex-C demonstrates ultrahigh ideal strength, outperforming both graphene and penta-graphene. It shows superior ductility and sustains uniaxial tensile strain up to 20% (16%) till phonon instability occurs, and the corresponding maximal strength is 38.3 N/m (37.8 N/m) in the zigzag (armchair) direction. It shows intrinsic negative Poisson's ratio. This exotic in-plane Poisson's ratio takes place when axial strain reaches a threshold value of 7% (5%) in the zigzag (armchair) direction. We also find that tetrahex-C holds a direct band gap of 2.64 eV at the center of Brillouin zone. This direct-band-gap feature maintains intact upon strain application with no direction-indirect gap transition. The ultrahigh ideal strength, negative Poisson's ratio and integrity of direct-gap under strain in tetrahex-C suggest it may have potential applications in nanomechanics and nanoelectronics.

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preprint2019arXiv

Quantum confinement and edge effects on electronic properties of zigzag green phosphorene nanoribbons

First principles density-functional theory calculations were performed to investigate quantum confinement and edge effects on the electronic properties of zigzag green phosphorene nanoribbons (ZGPNRs) with edge chemical species including H, OH, F, Cl, O, and S for the ribbons width in the range of 0.5 \~{} 3.7 nm. The ZGPNRs were obtained from the relaxed two-dimensional (2D) green phosphorene monolayer with different cutting strategies and the most energetically favorable ribbon configuration was selected for further exploration of the size and edge effects. It was found that the electronic properties of the ZGPNRs are strongly associated with the ribbon width and edge chemical species. They show either semiconducting or metallic features depending on the edge functionalization species. The ZGPNRs show semiconducting behavior with the edge species of H, OH, F, or Cl (Group \uppercase\expandafter{\romannumeral1}), while exhibit metallic characteristics with pristine or O, S edges (Group \uppercase\expandafter{\romannumeral2}). The conduction band minimum (CBM) and valence band maximum (VBM) of the ZGPNRs with the Group \uppercase\expandafter{\romannumeral1} edge are primarily located at the inner P atoms and the edge P and functionalization atoms have little contribution. However, for the Group \uppercase\expandafter{\romannumeral2} edge, the electronic bands crossing the Fermi level are dominantly contributed by the edge atoms. It was also found that the band gap and work function of the ZGPNRs are tunable by varying ribbon width and edge functionalization species.

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preprint2014arXiv

Chemical scissors cut phosphorene nanostructures and their novel electronic properties

Phosphorene, a recently fabricated two dimensional puckered honeycomb structure of phosphorus, showed promising properties for applications of nano-electronics. In this work, we report our findings of chemical scissors effects on phosphorene, using first principles density functional theory methods. It was found that several chemical species, such as H, F, Cl and OH group, can act effectively as scissors to cut phosphorene. Phosphorus chains and nanoribbons can be obtained using different surface coverage of the chemical species. The scissor effects of these species are resulted from their strong chemical bonds with the P atoms. Species such as O, S and Se were not able to cut phosphorene nanostructures due to their lack of strong binding with P. The electronic structure calculations of the produced P-chains reveal that the saturated chain is an insulator while the pristine chain demonstrates a Dirac point at X with a Fermi velocity of 8*10E5 m/s. The obtained zigzag phosphorene nanoribbons show either metallic or semiconducting behaviors, depending on the treatment of the edge P atoms.

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preprint2014arXiv

Edge effects on the electronic properties of phosphorene nanoribbons

Two dimensional few-layer black phosphorus crystal structures have recently fabricated and demonstrated great potential in applications of electronics. In this work, we employed first principles density functional theory calculations to study the edge effects and quantum confinement on the electronic properties of the phosphorene nanoribbons (PNR). Different edge functionalization groups, such as H, F, Cl, OH, O, S, and Se in addition to a pristine case, were studied for a series width of the ribbon up to 3.5 nm. It was found that the armchair-PNRs (APNRs) are semiconductors for all edge groups considered in this work. However, the zigzag-PNRs (ZPNRs) show either semiconductor or metallic behavior in dependence on their edge chemical groups. Family I edges (H, F, Cl, OH) form saturated bonds with P atoms and the edge states keep far away from the band gap. However, Family II edges (pristine, O, S, Se) form weak unsaturated bonds with the pz orbital of P atoms and bring edge states within the band gap. These edge states of Family II ribbons present around the Fermi level within the band gap, which close up the band gap of the ZPNRs. For the APNRs, these edge states are at the bottom of the conduction band and result in a reduced band gap.

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preprint2014arXiv

Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene

Recently fabricated two dimensional (2D) phosphorene crystal structures have demonstrated great potential in applications of electronics. In this work, strain effect on the electronic band structure of phosphorene was studied using first principles methods. It was found that phosphorene can withstand a surface tension and tensile strain up to 10 N/m and 30%, respectively. The band gap of phosphorene experiences a direct-indirect-direct transition when axial strain is applied. A moderate -2% compression in the zigzag direction can trigger this gap transition. With sufficient expansion (+11.3%) or compression (-10.2% strains), the gap can be tuned from indirect to direct again. Five strain zones with distinct electronic band structure were identified and the critical strains for the zone boundaries were determined. The origin of the gap transition was revealed and a general mechanism was developed to explain energy shifts with strain according to the bond nature of near-band-edge electronic orbitals. Effective masses of carriers in the armchair direction are an order of magnitude smaller than that of the zigzag axis indicating the armchair direction is favored for carrier transport. In addition, the effective masses can be dramatically tuned by strain, in which its sharp jump/drop occurs at the zone boundaries of the direct-indirect gap transition.

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preprint2014arXiv

Superior mechanical flexibility of phosphorene and few-layer black phosphorus

Recently fabricated two dimensional (2D) phosphorene crystal structures have demonstrated great potential in applications of electronics. Mechanical strain was demonstrated to be able to significantly modify the electronic properties of phosphorene and few-layer black phosphorus. In this work, we employed first principles density functional theory calculations to explore the mechanical properties of phosphorene, including ideal tensile strength and critical strain. It was found that a monolayer phosphorene can sustain tensile strain up to 27% and 30% in the zigzag and armchair directions, respectively. This enormous strain limit of phosphorene results from its unique puckered crystal structure. We found that the tensile strain applied in the armchair direction stretches the pucker of phosphorene, rather than significantly extending the P-P bond lengths. The compromised dihedral angles dramatically reduce the required strain energy. Compared to other 2D materials such as graphene, phosphorene demonstrates superior flexibility with an order of magnitude smaller Young modulus. This is especially useful in practical large-magnitude-strain engineering. Furthermore, the anisotropic nature of phosphorene was also explored. We derived a general model to calculate the Young modulus along different directions for a 2D system.

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preprint2012arXiv

Engineering direct-indirect band gap transition in wurtzite GaAs nanowires through size and uniaxial strain

Electronic structures of wurtzite GaAs nanowires in the [0001] direction were studied using first-principles calculations. It was found that the band gap of GaAs nanowires experience a direct-to-indirect transition when the diameter of the nanowires is smaller than ~28 Å. For those thin GaAs nanowires with an indirect band gap, it was found that the gap can be tuned to be direct if a moderate external uniaxial strain is applied. Both tensile and compressive strain can trigger the indirect-to-direct gap transition. The critical strains for the gap-transition are determined by the energy crossover of two states in conduction bands.

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preprint2012arXiv

Engineering the work function of armchair graphene nanoribbons using strain and surface functional species: a first principles study

First principles density-functional theory calculations were performed to study the effects of strain, edge passivation, and surface functional species on the structural and electronic properties of armchair graphene nanoribbons (AGNRs) with a particular focus on the work function. The work function was found to increase with uniaxial tensile strain while decreasing with compression. The variation of the work function under strain is primarily due to the shift of the Fermi energy with strain. In addition, the relationship between the work function variation and the core level shift with strain is discussed. Distinct trends of the core level shift under tensile and compressive strain were discovered. For AGNRs with the edge carbon atoms passivated by oxygen, the work function is higher than for nanoribbons with the edge passivated by hydrogen under a moderate strain. The difference between the work functions in these two edge passivations is enlarged (reduced) under a sufficient tensile (compressive) strain. This has been correlated to a direct-indirect band gap transition for tensile strains of about 4% and to a structural transformation for large compressive strains at about -12%. Furthermore, the effect of the surface species decoration, such as H, F, or OH with different covering density, was investigated. It was found that the work function varies with the type and coverage of surface functional species. F and OH decoration increase the work function while H decreases it. The surface functional species were decorated on either one side or both sides of AGNRs. The difference in the work functions between one-side and two-side decorations was found to be relatively small, which may suggest an introduced surface dipole plays a minor role.

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preprint2011arXiv

Band structure of Si/Ge core-shell nanowires along [110] direction modulated by external uniaxial strain

Strain modulated electronic properties of Si/Ge core-shell nanowires along [110] direction were reported based on first principles density-functional theory calculations. Particularly, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (~1%), the valence band edge (VBE) shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can be also tuned by the external uniaxial strain. The effective mass of the hole increases dramatically with a tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wave-function characters.

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preprint2011arXiv

Strain modulated band gap of edge passivated armchair graphene nanoribbons

First principles calculations were performed to study strain effects on band gap of armchair graphene nanoribbons (AGNRs)with different edge passivation, including H, O, and OH group. The band gap of the H-passivated AGNRs shows a nearly periodic zigzag variation under strain. For O and OH passivation, the zigzag patterns are significantly shifted by a modified quantum confinement due to the edges. In addition, the band gap of the O-passivated AGNRs experiences a direct-to-indirect transition with sufficient tensile strain (~5%). The indirect gap reduces to zero with further increased strain.

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preprint2010arXiv

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

We have applied density-functional theory (DFT) based calculations to investigate the size and strain effects on the electronic properties, such as band structures, energy gaps, and effective masses of the electron and the hole, in Si nanowires along the <110> direction with diameters up to 5 nm. Under uniaxial strain, we find the band gap varies with strain and this variation is size dependent. For the 1 ~ 2 nm wire, the band gap is a linear function of strain, while for the 2 ~ 4 nm wire the gap variation with strain shows nearly parabolic behavior. This size dependence of the gap variation with strain is explained on the basis of orbital characters of the band edges. In addition we find that the expansive strain increases the effective mass of the hole, while compressive strain increases the effective mass of the electron. The study of size and strain effects on effective masses shows that effective masses of the electron and the hole can be reduced by tuning the diameter of the wire and applying appropriate strain.

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preprint2010arXiv

Electronic Properties of Strained Si/Ge Core-Shell Nanowires

We investigated the electronic properties of strained Si/Ge core-shell nanowires along the [110] direction using first principles calculations based on density-functional theory. The diameter of the studied core-shell wire is up to 5 nm. We found the band gap of the core-shell wire is smaller than that of both pure Si and Ge wires with the same diameter. This reduced band gap is ascribed to the intrinsic strain between Ge and Si layers, which partially counters the quantum confinement effect. The external strain is further applied to the nanowires for tuning the band structure and band gap. By applying sufficient tensile strain, we found the band gap of Si-core/Ge-shell nanowire with diameter larger than ~3 nm experiences a transition from direct to indirect gap.

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preprint2010arXiv

Strain Modulated Electronic Properties of Ge Nanowires - A First Principles Study

We used density-functional theory based first principles simulations to study the effects of uniaxial strain and quantum confinement on the electronic properties of germanium nanowires along the [110] direction, such as the energy gap and the effective masses of the electron and hole. The diameters of the nanowires being studied are up to 50 Å. As shown in our calculations, the Ge [110] nanowires possess a direct band gap, in contrast to the nature of an indirect band gap in bulk. We discovered that the band gap and the effective masses of charge carries can be modulated by applying uniaxial strain to the nanowires. These strain modulations are size-dependent. For a smaller wire (~ 12 Å), the band gap is almost a linear function of strain; compressive strain increases the gap while tensile strain reduces the gap. For a larger wire (20 Å - 50 Å), the variation of the band gap with respect to strain shows nearly parabolic behavior: compressive strain beyond -1% also reduces the gap. In addition, our studies showed that strain affects effective masses of the electron and hole very differently. The effective mass of the hole increases with a tensile strain while the effective mass of the electron increases with a compressive strain. Our results suggested both strain and size can be used to tune the band structures of nanowires, which may help in design of future nano-electronic devices. We also discussed our results by applying the tight-binding model.

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