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Researcher profile

Xihong Peng

Xihong Peng contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.comp-phcond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

5 published item(s)

preprint2021arXiv

A new 2D auxetic CN2 nanostructure with high energy density and mechanical strength

The existence of a new two dimensional CN2 structure was predicted using ab-initio molecular dynamics (AIMD) and density-functional theory calculations. It consists tetragonal and hexagonal rings with C-N and N-N bonds arranged in a buckling plane, isostructural to tetrahex-carbon allotrope. It is thermodynamically and kinetically stable suggested by its phonon spectrum and AIMD. This nanosheet has high concentration of N and contains N-N single bonds with an energy density of 6.3 kJ/g, indicating potential applications as high energy density materials. It possesses exotic mechanical properties with negative Poisson's ratio and an anisotropic Young's modulus. The modulus in the zigzag direction is predicted to be 340 N/m, stiffer than h-BN and penta-CN2 sheets and comparable to graphene. Its ideal strength of 28.8 N/m outperforms that of penta-graphene. The material maintains phonon stability upon the application of uniaxial strain up to 10% (13%) in the zigzag (armchair) direction or biaxial strain up to 5%. It possesses a wide indirect HSE band gap of 4.57 eV which is tunable between 3.37 - 4.57 eV through strain. Double-layer structures are also explored. Such unique properties may have potential applications in high energy density materials, nanomechanics and electronics.

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preprint2020arXiv

Enhanced carrier mobility in anisotropic 2D tetrahex-carbon through strain engineering

A recently predicted two dimensional (2D) carbon allotrope, tetrahex-carbon consisting of tetragonal and hexagonal rings, draws research interests due to its unique mechanical and electronic properties. Tetrahex-C shows ultrahigh strength, negative Poisson ratio, a direct band gap and high carrier mobility. In this work, we employ first-principles density-functional theory calculations to explore the directional dependence of electronic properties such as carrier effective mass and mobility in tetrahex-C. Tetrahex-C demonstrates strong anisotropicity in effective mass of charge carrier and therefore its mobility (electric conductance) exhibits a strong orientation preference. More interesting, we find that such unique anisotropic carrier effective mass and mobility can be controlled by simple uniaxial strain. The orientation dependence of effective mass can be dramatically rotated by 90 degrees through applying uniaxial tensile strain beyond ~ 7% (11%) in the armchair direction for the hole (electron). As a result, the intrinsic carrier mobility in tetrahex-C is significantly enhanced. The results are useful for potential electronic and mechanical applications in tetrahex-C.

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preprint2019arXiv

Auxetic tetrahex-carbon with ultrahigh strength and direct band gap

Tetrahex-carbon is a recently predicted two dimensional (2D) carbon allotrope which is composed of tetragonal and hexagonal rings. Unlike flat graphene, this new 2D carbon structure is buckled, possesses a direct band gap ~ 2.6 eV and high carrier mobility with anisotropic feature. In this work, we employ first-principles density-functional theory calculations to explore mechanical properties of tetrahex-C under uniaxial tensile strain. We find that tetrahex-C demonstrates ultrahigh ideal strength, outperforming both graphene and penta-graphene. It shows superior ductility and sustains uniaxial tensile strain up to 20% (16%) till phonon instability occurs, and the corresponding maximal strength is 38.3 N/m (37.8 N/m) in the zigzag (armchair) direction. It shows intrinsic negative Poisson's ratio. This exotic in-plane Poisson's ratio takes place when axial strain reaches a threshold value of 7% (5%) in the zigzag (armchair) direction. We also find that tetrahex-C holds a direct band gap of 2.64 eV at the center of Brillouin zone. This direct-band-gap feature maintains intact upon strain application with no direction-indirect gap transition. The ultrahigh ideal strength, negative Poisson's ratio and integrity of direct-gap under strain in tetrahex-C suggest it may have potential applications in nanomechanics and nanoelectronics.

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preprint2019arXiv

Quantum confinement and edge effects on electronic properties of zigzag green phosphorene nanoribbons

First principles density-functional theory calculations were performed to investigate quantum confinement and edge effects on the electronic properties of zigzag green phosphorene nanoribbons (ZGPNRs) with edge chemical species including H, OH, F, Cl, O, and S for the ribbons width in the range of 0.5 \~{} 3.7 nm. The ZGPNRs were obtained from the relaxed two-dimensional (2D) green phosphorene monolayer with different cutting strategies and the most energetically favorable ribbon configuration was selected for further exploration of the size and edge effects. It was found that the electronic properties of the ZGPNRs are strongly associated with the ribbon width and edge chemical species. They show either semiconducting or metallic features depending on the edge functionalization species. The ZGPNRs show semiconducting behavior with the edge species of H, OH, F, or Cl (Group \uppercase\expandafter{\romannumeral1}), while exhibit metallic characteristics with pristine or O, S edges (Group \uppercase\expandafter{\romannumeral2}). The conduction band minimum (CBM) and valence band maximum (VBM) of the ZGPNRs with the Group \uppercase\expandafter{\romannumeral1} edge are primarily located at the inner P atoms and the edge P and functionalization atoms have little contribution. However, for the Group \uppercase\expandafter{\romannumeral2} edge, the electronic bands crossing the Fermi level are dominantly contributed by the edge atoms. It was also found that the band gap and work function of the ZGPNRs are tunable by varying ribbon width and edge functionalization species.

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preprint2010arXiv

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

We have applied density-functional theory (DFT) based calculations to investigate the size and strain effects on the electronic properties, such as band structures, energy gaps, and effective masses of the electron and the hole, in Si nanowires along the <110> direction with diameters up to 5 nm. Under uniaxial strain, we find the band gap varies with strain and this variation is size dependent. For the 1 ~ 2 nm wire, the band gap is a linear function of strain, while for the 2 ~ 4 nm wire the gap variation with strain shows nearly parabolic behavior. This size dependence of the gap variation with strain is explained on the basis of orbital characters of the band edges. In addition we find that the expansive strain increases the effective mass of the hole, while compressive strain increases the effective mass of the electron. The study of size and strain effects on effective masses shows that effective masses of the electron and the hole can be reduced by tuning the diameter of the wire and applying appropriate strain.

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