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Qun Wei

Qun Wei appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phquant-phphysics.app-phphysics.ins-det

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Published work

12 published item(s)

preprint2021arXiv

A new 2D auxetic CN2 nanostructure with high energy density and mechanical strength

The existence of a new two dimensional CN2 structure was predicted using ab-initio molecular dynamics (AIMD) and density-functional theory calculations. It consists tetragonal and hexagonal rings with C-N and N-N bonds arranged in a buckling plane, isostructural to tetrahex-carbon allotrope. It is thermodynamically and kinetically stable suggested by its phonon spectrum and AIMD. This nanosheet has high concentration of N and contains N-N single bonds with an energy density of 6.3 kJ/g, indicating potential applications as high energy density materials. It possesses exotic mechanical properties with negative Poisson's ratio and an anisotropic Young's modulus. The modulus in the zigzag direction is predicted to be 340 N/m, stiffer than h-BN and penta-CN2 sheets and comparable to graphene. Its ideal strength of 28.8 N/m outperforms that of penta-graphene. The material maintains phonon stability upon the application of uniaxial strain up to 10% (13%) in the zigzag (armchair) direction or biaxial strain up to 5%. It possesses a wide indirect HSE band gap of 4.57 eV which is tunable between 3.37 - 4.57 eV through strain. Double-layer structures are also explored. Such unique properties may have potential applications in high energy density materials, nanomechanics and electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Accelerating inverse crystal structure prediction by machine learning: a case study of carbon allotropes

Based on structure prediction method, the machine learning method is used instead of the density function theory (DFT) method to predict the material properties, thereby accelerating the material search process. In this paper, we established a data set of carbon materials by high-throughput calculation with available carbon structures obtained from the Samara Carbon Allotrope Database. We then trained an ML model that specifically predicts the elastic modulus (bulk modulus, shear modulus, and the Young's modulus) and confirmed that the accuracy is better than that of AFLOW-ML in predicting the elastic modulus of a carbon allotrope. We further combined our ML model with the CALYPSO code to search for new carbon structures with a high Young's modulus. A new carbon allotrope not included in the Samara Carbon Allotrope Database, named Cmcm-C24, which exhibits a hardness greater than 80 GPa, was firstly revealed. The Cmcm-C24 phase was identified as a semiconductor with a direct bandgap. The structural stability, elastic modulus, and electronic properties of the new carbon allotrope were systematically studied, and the obtained results demonstrate the feasibility of ML methods accelerating the material search process.

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preprint2020arXiv

Enhanced carrier mobility in anisotropic 2D tetrahex-carbon through strain engineering

A recently predicted two dimensional (2D) carbon allotrope, tetrahex-carbon consisting of tetragonal and hexagonal rings, draws research interests due to its unique mechanical and electronic properties. Tetrahex-C shows ultrahigh strength, negative Poisson ratio, a direct band gap and high carrier mobility. In this work, we employ first-principles density-functional theory calculations to explore the directional dependence of electronic properties such as carrier effective mass and mobility in tetrahex-C. Tetrahex-C demonstrates strong anisotropicity in effective mass of charge carrier and therefore its mobility (electric conductance) exhibits a strong orientation preference. More interesting, we find that such unique anisotropic carrier effective mass and mobility can be controlled by simple uniaxial strain. The orientation dependence of effective mass can be dramatically rotated by 90 degrees through applying uniaxial tensile strain beyond ~ 7% (11%) in the armchair direction for the hole (electron). As a result, the intrinsic carrier mobility in tetrahex-C is significantly enhanced. The results are useful for potential electronic and mechanical applications in tetrahex-C.

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preprint2019arXiv

Auxetic tetrahex-carbon with ultrahigh strength and direct band gap

Tetrahex-carbon is a recently predicted two dimensional (2D) carbon allotrope which is composed of tetragonal and hexagonal rings. Unlike flat graphene, this new 2D carbon structure is buckled, possesses a direct band gap ~ 2.6 eV and high carrier mobility with anisotropic feature. In this work, we employ first-principles density-functional theory calculations to explore mechanical properties of tetrahex-C under uniaxial tensile strain. We find that tetrahex-C demonstrates ultrahigh ideal strength, outperforming both graphene and penta-graphene. It shows superior ductility and sustains uniaxial tensile strain up to 20% (16%) till phonon instability occurs, and the corresponding maximal strength is 38.3 N/m (37.8 N/m) in the zigzag (armchair) direction. It shows intrinsic negative Poisson's ratio. This exotic in-plane Poisson's ratio takes place when axial strain reaches a threshold value of 7% (5%) in the zigzag (armchair) direction. We also find that tetrahex-C holds a direct band gap of 2.64 eV at the center of Brillouin zone. This direct-band-gap feature maintains intact upon strain application with no direction-indirect gap transition. The ultrahigh ideal strength, negative Poisson's ratio and integrity of direct-gap under strain in tetrahex-C suggest it may have potential applications in nanomechanics and nanoelectronics.

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preprint2014arXiv

Chemical scissors cut phosphorene nanostructures and their novel electronic properties

Phosphorene, a recently fabricated two dimensional puckered honeycomb structure of phosphorus, showed promising properties for applications of nano-electronics. In this work, we report our findings of chemical scissors effects on phosphorene, using first principles density functional theory methods. It was found that several chemical species, such as H, F, Cl and OH group, can act effectively as scissors to cut phosphorene. Phosphorus chains and nanoribbons can be obtained using different surface coverage of the chemical species. The scissor effects of these species are resulted from their strong chemical bonds with the P atoms. Species such as O, S and Se were not able to cut phosphorene nanostructures due to their lack of strong binding with P. The electronic structure calculations of the produced P-chains reveal that the saturated chain is an insulator while the pristine chain demonstrates a Dirac point at X with a Fermi velocity of 8*10E5 m/s. The obtained zigzag phosphorene nanoribbons show either metallic or semiconducting behaviors, depending on the treatment of the edge P atoms.

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preprint2014arXiv

Edge effects on the electronic properties of phosphorene nanoribbons

Two dimensional few-layer black phosphorus crystal structures have recently fabricated and demonstrated great potential in applications of electronics. In this work, we employed first principles density functional theory calculations to study the edge effects and quantum confinement on the electronic properties of the phosphorene nanoribbons (PNR). Different edge functionalization groups, such as H, F, Cl, OH, O, S, and Se in addition to a pristine case, were studied for a series width of the ribbon up to 3.5 nm. It was found that the armchair-PNRs (APNRs) are semiconductors for all edge groups considered in this work. However, the zigzag-PNRs (ZPNRs) show either semiconductor or metallic behavior in dependence on their edge chemical groups. Family I edges (H, F, Cl, OH) form saturated bonds with P atoms and the edge states keep far away from the band gap. However, Family II edges (pristine, O, S, Se) form weak unsaturated bonds with the pz orbital of P atoms and bring edge states within the band gap. These edge states of Family II ribbons present around the Fermi level within the band gap, which close up the band gap of the ZPNRs. For the APNRs, these edge states are at the bottom of the conduction band and result in a reduced band gap.

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preprint2014arXiv

Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene

Recently fabricated two dimensional (2D) phosphorene crystal structures have demonstrated great potential in applications of electronics. In this work, strain effect on the electronic band structure of phosphorene was studied using first principles methods. It was found that phosphorene can withstand a surface tension and tensile strain up to 10 N/m and 30%, respectively. The band gap of phosphorene experiences a direct-indirect-direct transition when axial strain is applied. A moderate -2% compression in the zigzag direction can trigger this gap transition. With sufficient expansion (+11.3%) or compression (-10.2% strains), the gap can be tuned from indirect to direct again. Five strain zones with distinct electronic band structure were identified and the critical strains for the zone boundaries were determined. The origin of the gap transition was revealed and a general mechanism was developed to explain energy shifts with strain according to the bond nature of near-band-edge electronic orbitals. Effective masses of carriers in the armchair direction are an order of magnitude smaller than that of the zigzag axis indicating the armchair direction is favored for carrier transport. In addition, the effective masses can be dramatically tuned by strain, in which its sharp jump/drop occurs at the zone boundaries of the direct-indirect gap transition.

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preprint2014arXiv

Superior mechanical flexibility of phosphorene and few-layer black phosphorus

Recently fabricated two dimensional (2D) phosphorene crystal structures have demonstrated great potential in applications of electronics. Mechanical strain was demonstrated to be able to significantly modify the electronic properties of phosphorene and few-layer black phosphorus. In this work, we employed first principles density functional theory calculations to explore the mechanical properties of phosphorene, including ideal tensile strength and critical strain. It was found that a monolayer phosphorene can sustain tensile strain up to 27% and 30% in the zigzag and armchair directions, respectively. This enormous strain limit of phosphorene results from its unique puckered crystal structure. We found that the tensile strain applied in the armchair direction stretches the pucker of phosphorene, rather than significantly extending the P-P bond lengths. The compromised dihedral angles dramatically reduce the required strain energy. Compared to other 2D materials such as graphene, phosphorene demonstrates superior flexibility with an order of magnitude smaller Young modulus. This is especially useful in practical large-magnitude-strain engineering. Furthermore, the anisotropic nature of phosphorene was also explored. We derived a general model to calculate the Young modulus along different directions for a 2D system.

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preprint2013arXiv

Modulating the electronic properties of graphdiyne nanoribbons

By ab initio calculation, Au, Cu, Fe, Ni and Pt adatoms were proposed for modulating the electronic property of graphdiyne naoribbons (GDNRs). GDNRs of 1~4 nm in width were found to be stable at room temperature, and the thermal rates of Au, Cu, Fe, Ni and Pt adatoms escaping from GDNR are slower than 0.003 atoms per hour even at 900 K. According to the calculation, Au and Cu-decorated GDNRs are metallic with carrier concentrations close to that of graphene at room temperature, while Fe, Ni and Pt-decorated GDNRs are n-type semiconductors with impurity states below Fermi energy. Heterojunction composed by doping Au, Cu or Fe atom on one side of GDNR was proposed as metal-semiconductor rectifier with rectification ratio of 2.8, 1.5 or 2.5 at 1.0 V, respectively.

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preprint2013arXiv

The negative probabilities and information gain in weak measurements

We study the outcomes in a general measurement with postselection, and derive upper bounds for the pointer readings in weak measurement. Using the idea of weak measurement, we study Hardy's gedanken experiment and show how the "negative probabilities" emerge in weak measurement. By calculating the information gain of the measuring device about which path the particles pass through, we show that the "negative probabilities" only emerge for cases when the information gain is little due to very weak coupling between the measuring device and the particles. When the coupling strength increases, we can unambiguously determine whether a particle passes through a given path every time, hence the average shifts always represent true probabilities, and the strange "negatives probabilities" disappear.

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preprint2011arXiv

Edge effects in electrostatic calibrations for the measurement of the Casimir force

We have performed numerical simulations to evaluate the effect on the capacitance of finite size boundaries realistically present in the parallel plane, sphere-plane, and cylinder-plane geometries. The potential impact of edge effects in assessing the accuracy of the parameters obtained in the electrostatic calibrations of Casimir force experiments is then discussed.

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preprint2010arXiv

Equilibrium states of a test particle coupled to finite size heat baths

We report on numerical simulations of the dynamics of a test particle coupled to competing Boltzmann heat baths of finite size. After discussing some features of the single bath case, we show that the presence of two heat baths further constraints the conditions necessary for the test particle to thermalize with the heat baths. We find that thermalization is a spectral property in which the oscillators of the bath with frequencies in the range of the test particle characteristic frequency determine its degree of thermalization. We also find an unexpected frequency shift of the test particle response with respect to the spectra of the two heat baths. Finally, we discuss implications of our results for the study of high-frequency nanomechanical resonators through cold damping cooling techniques, and for engineering reservoirs capable of mitigating the back-action on a mechanical system.

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