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Xiaoping Liu

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physics.app-ph physics.optics physics.ins-det physics.plasm-ph Populations and Evolution

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preprint2020arXiv

A Series of Plasma Innovation Technologies by Double Glow Discharge Phenomenon

In order to break the limitation of plasma nitriding technology,which can be applied to a few nonmetallic gaseous elements, the "Double Glow Discharge Phenomenon" was found and then invented the "Double Glow Plasma Surface Metallurgy Technology". This double glow plasma surface metallurgy technology can use any element in the periodic table of chemical elements for surface alloying of metal materials. Countless surface alloys with special physical and chemical properties have been produced on the surfaces of conductive materials.By using double glow discharge phenomenon,a series of new plasma technologies,such as the double glow plasma graphene technology, double glow plasma brazing technology,double glow plasma sintering technology, double glow plasma nanotechnology,double glow plasma cleaning technology, double glow plasma carburizing without hydrogen and so on, have been invented.A very simple phenomenon of double glow discharge can generate about 10 plasma innovation technologies, which fully shows that there is still a lot of innovation space on the basis of classical physics.This paper briefly introduces the basic principles,functions and characteristics of each technology. The application prospects and development directions of plasma in metal materials and machinery manufacturing industry will also be discussed.

preprint2020arXiv

Plasma Surface Metallurgy of Materials Based on Double Glow Discharge Phenomenon

Plasma Surface Metallurgy/Alloying is a kind of surface metallurgy/alloying to employ low temperature plasma produced by glow discharge to diffuse alloying elements into the surface of substrate material to form an alloy layer. The first plasma surface metallurgy technology is plasma nitriding invented by German scientist Dr. Bernard Berghuas in 1930. He was the first person to apply glow discharge to realize the surface alloying. In order to break the limitation of plasma nitriding technology, which can only be applied to a few non-metallic gaseous elements such as nitrogen, carbon, sulfur, the "Double Glow Discharge Phenomenon"was found in 1978. Based on this phenomenon the "Double Glow Plasma Surface Metallurgy Technology", also known as the "Xu-Tec Process" was invented in 1980. It can utilize any chemical elements in the periodic table including solid metallic, gas non-metallic elements and their combination to realize plasma surface alloying, hence greatly expanded the field of surface alloying. Countless surface alloys with high hardness, wear resistance and corrosion resistance, such as high speed steels, nickel base alloys and burn resistant alloys have been produced on the surfaces of a variety of materials. This technology may greatly improve the surface properties of metal materials, comprehensively improve the quality of mechanical products, save a lot of precious alloy elements for human beings. Based on the plasma nitriding technology, the Xu-Tec Process has opened up a new material engineering field of "Plasma Surface Metallurgy". This Review Article briefly presents the history of glow discharge and surface alloying, double glow discharge phenomenon, basic principle and current status of Double Glow Plasma Surface Metallurgy/Alloying. Industrial applications, advantages and future potential of the Xu-Tec process are also presented.

preprint2015arXiv

Life Equations for the Senescence Process

The Gompertz law of mortality quantitatively describes the mortality rate of humans and almost all multicellular animals. However, its underlying kinetic mechanism is unclear. The Gompertz law cannot explain the effect of temperature on lifespan and the mortality plateau at advanced ages. In this study a reaction kinetics model with a time dependent rate coefficient is proposed to describe the survival and senescence processes. A temperature-dependent mortality function was derived. The new mortality function becomes the Gompertz mortality function with the same relationship of parameters prescribed by the Strehler-Mildvan correlation when age is smaller than a characteristic value δ, and reaches the mortality plateau when age is greater than δ. A closed-form analytical expression for describing the relationship of average lifespan with temperature and other equations are derived from the new mortality function. The derived equations can be used to estimate the limit of average lifespan, predict the maximal longevity, calculate the temperature coefficient of lifespan, and explain the tendency of survival curve. This prediction is consistent with the most recently reported mortality trajectories for single-year birth cohorts. This study suggests that the senescence process results from the imbalance between damaging energy and protecting energy for the critical chemical substance in the body. The rate of senescence of the organism increases while the protecting energy decreases. The mortality plateau is reached when the protecting energy decreases to its minimal levels. The decreasing rate of the protecting energy is temperature-dependent. This study is exploring the connection between biochemical mechanism and demography.

preprint2012arXiv

Bridging the Mid-Infrared-to-Telecom Gap with Silicon Nanophotonic Spectral Translation

Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical signals in the 2-8 μm range. Mid-IR integrated optical systems are capable of addressing applications including industrial process and environmental monitoring, threat detection, medical diagnostics, and free-space communication. Rapid progress has led to the demonstration of various silicon components designed for the on-chip processing of mid-IR signals, including waveguides, vertical grating couplers, microcavities, and electrooptic modulators. Even so, a notable obstacle to the continued advancement of chip-scale systems is imposed by the narrow-bandgap semiconductors, such as InSb and HgCdTe, traditionally used to convert mid-IR photons to electrical currents. The cryogenic or multi-stage thermo-electric cooling required to suppress dark current noise, exponentially dependent upon the ratio Eg/kT, can limit the development of small, low-power, and low-cost integrated optical systems for the mid-IR. However, if the mid-IR optical signal could be spectrally translated to shorter wavelengths, for example within the near-infrared telecom band, photodetectors using wider bandgap semiconductors such as InGaAs or Ge could be used to eliminate prohibitive cooling requirements. Moreover, telecom band detectors typically perform with higher detectivity and faster response times when compared with their mid-IR counterparts. Here we address these challenges with a silicon-integrated approach to spectral translation, by employing efficient four-wave mixing (FWM) and large optical parametric gain in silicon nanophotonic wires.

preprint2010arXiv

Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides

All-optical signal processing is envisioned as an approach to dramatically decrease power consumption and speed up performance of next-generation optical telecommunications networks. Nonlinear optical effects, such as four-wave mixing (FWM) and parametric gain, have long been explored to realize all-optical functions in glass fibers. An alternative approach is to employ nanoscale engineering of silicon waveguides to enhance the optical nonlinearities by up to five orders of magnitude, enabling integrated chip-scale all-optical signal processing. Previously, strong two-photon absorption (TPA) of the telecom-band pump has been a fundamental and unavoidable obstacle, limiting parametric gain to values on the order of a few dB. Here we demonstrate a silicon nanophotonic optical parametric amplifier exhibiting gain as large as 25.4 dB, by operating the pump in the mid-IR near one-half the band-gap energy (E~0.55eV, lambda~2200nm), at which parasitic TPA-related absorption vanishes. This gain is high enough to compensate all insertion losses, resulting in 13 dB net off-chip amplification. Furthermore, dispersion engineering dramatically increases the gain bandwidth to more than 220 nm, all realized using an ultra-compact 4 mm silicon chip. Beyond its significant relevance to all-optical signal processing, the broadband parametric gain also facilitates the simultaneous generation of multiple on-chip mid-IR sources through cascaded FWM, covering a 500 nm spectral range. Together, these results provide a foundation for the construction of silicon-based room-temperature mid-IR light sources including tunable chip-scale parametric oscillators, optical frequency combs, and supercontinuum generators.