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Xiaokun Gu

Xiaokun Gu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.comp-phphysics.geo-ph

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Published work

14 published item(s)

preprint2021arXiv

The Energy Efficiency of Interfacial Solar Desalination: Insights from Detailed Theoretical Analysis

Solar-thermal evaporation, a traditional steam generation method for solar desalination, has received numerous attentions in recent years due to the significant increase in efficiency by adopting interfacial evaporation. While most of the previous studies focus on improving the evaporation efficiency by materials innovation and system design, the underlying mechanisms of its energy efficiency are less explored, leading to many confusions and misunderstandings. Herein, we clarify these mechanisms with a detailed thermal analysis model. Using this model, we elucidate the advantages of interfacial evaporation over the traditional evaporation method. Furthermore, we clarify the role of tuning the solar flux and surface area on the evaporation efficiency. Moreover, we quantitatively prove that the influence of environmental conditions on evaporation efficiency could not be eliminated by subtracting the dark evaporation rate from evaporation rate under solar. We also find that interfacial evaporation in a solar still does not have the high overall solar desalination efficiency as expected, but further improvement is possible from the system design part. Our analysis gains insights to the thermal processes involved in interfacial solar evaporation and offers perspectives to the further development of interfacial solar desalination technology.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anomalous thermal transport in metallic transition-metal nitrides originated from strong electron-phonon interactions

Metallic transition-metal nitrides (TMNs) are promising conductive ceramics for many applications, whose thermal transport is of great importance in device design. It is found metallic TiN and HfN hold anomalous thermal transport behaviors compared to common metals and nonmetallic TMNs. They have extremely large intrinsic phonon thermal conductivity mainly due to the large acoustic-optic phonon frequency gaps. The phonon thermal conductivity is reduced by two orders of magnitude as the phonon-isotope and phonon-electron scatterings are considered, which also induce the nontrivial temperature-independent behavior of phonon thermal conductivity. Nesting Fermi surfaces exist in both TiN and HfN, which cause the strong electron-phonon coupling strengths and heavily harm the transport of phonons and electrons. The phonon component takes an abnormally large ratio in total thermal conductivity, as 29% for TiN and 26% for HfN at 300 K. The results for thin films are also presented and it is shown that the phonon thermal conductivity can be efficiently limited by size. Our findings provide a deep understanding on the thermal transport in metallic TMNs and expand the scope of heat conduction theory in metal.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Seeking for low thermal conductivity atomic configurations in $\rm{Si_{0.5}Ge_{0.5}}$ alloys with Bayesian Optimization

The emergence of data-driven science has opened up new avenues for understanding the thermophysical properties of materials. For decades, alloys are known to possess very low thermal conductivity, but the extreme thermal conductivity can be achieved by alloying has never been identified. In this work, we combine the Bayesian optimization with a high throughput thermal conductivity calculation to search for the lowest thermal conductivity atomic configuration of $\rm{Si_{0.5}Ge_{0.5}}$ alloy. It is found layered structures are most beneficial for reducing the thermal conductivity among all atomic configurations, which is attributed to the strong branch-folding effect. Furthermore, the roles of interface roughness and layer thicknesses in producing the lowest thermal conductivity are investigated. Through another comprehensive search using Bayesian optimization, the layered structure with smooth interfaces and optimized layer thickness arrangement is identified as the optimal structure with the lowest thermal conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Thermal conductivity of intrinsic semiconductor at elevated temperature: role of four-phonon scattering and electronic heat conduction

While using first-principles-based Boltzmann transport equation approach to predict the thermal conductivity of crystalline semiconductor materials has been a routine, the validity of the approach is seldom tested for high-temperature conditions. Most previous studies only focused on the phononic contribution, and neglected the electronic part. Meanwhile, the treatment on phonon transport is not rigorous as a few ingredients, such as four-phonon scatterings, phonon renormalization and thermal expansion, are ignored. In this paper, we present a Boltzmann transport equation study on high-temperature thermal conduction in bulk silicon by considering the effects of both phonons and electrons, and explore the role of the missing parts in the previous studies on the thermal conductivity at elevated temperature. For the phonon transport, four-phonon scattering is found to considerably reduce the thermal conductivity when the temperature is larger than 700 K, while the effects of phonon renormalization and thermal expansion on phononic thermal conductivity are negligible. Bipolar contribution to the electronic thermal conductivity calculated from first-principles is implemented for the first time. More than 25% of heat is shown to be conducted by electrons at 1500 K. The computed total thermal conductivity of silicon faithfully reproduces the measured data. The approach presented in this paper is expected to be applied to other high-temperature functional materials, and the results could serve as benchmarks and help to explain the high-temperature phonon and electron transport phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A minimal Tersoff potential for diamond silicon with improved descriptions of elastic and phonon transport properties

Silicon is an important material and many empirical interatomic potentials have been developed for atomistic simulations of it. Among them, the Tersoff potential and its variants are the most popular ones. However, all the existing Tersoff-like potentials fail to reproduce the experimentally measured thermal conductivity of diamond silicon. Here we propose a modified Tersoff potential and develop an efficient open source code called GPUGA (graphics processing units genetic algorithm) based on the genetic algorithm and use it to fit the potential parameters against energy, virial and force data from quantum density functional theory calculations. This potential, which is implemented in the efficient open source GPUMD (graphics processing units molecular dynamics) code, gives significantly improved descriptions of the thermal conductivity and phonon dispersion of diamond silicon as compared to previous Tersoff potentials and at the same time well reproduces the elastic constants. Furthermore, we find that quantum effects on the thermal conductivity of diamond silicon at room temperature are non-negligible but small: using classical statistics underestimates the thermal conductivity by about 10\% as compared to using quantum statistics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3

Great success has been achieved in improving the photovoltaic energy conversion efficiency of the organic-inorganic perovskite-based solar cells, but with very limited knowledge on the thermal transport in hybrid perovskites, which would affect the device lifetime and stability. Based on the potential developed from the density functional theory calculations, we studied the lattice thermal conductivity of the hybrid halide perovskite CH3NH3PbI3 using equilibrium molecular dynamics simulations. Temperature-dependent thermal conductivity is reported from 160 K to 400 K, which covers the tetragonal phase (160-330 K) and the pseudocubic phase (>330K). A very low thermal conductivity (0.50 W/mK) is found in the tetragonal phase at room temperature, whereas a much higher thermal conductivity is found in the pseudocubic phase (1.80 W/mK at 330 K). The low group velocity of acoustic phonons and the strong anharmonicity are found responsible for the relatively low thermal conductivity of the tetragonal CH3NH3PbI3.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Layer thickness-dependent phonon properties and thermal conductivity of MoS2

For conventional materials, the thermal conductivity of thin film is usually suppressed when the thickness decreases due to phonon-boundary scattering. However, this is not necessarily true for the van der Waals solids if the thickness is reduced to only a few layers. In this letter, the layer thickness-dependent phonon properties and thermal conductivity in the few-layer MoS2 are studied using the first-principles-based Peierls-Boltzmann transport equation approach. The basal-plane thermal conductivity is found to monotonically reduce from 138 W/mK to 98 W/mK for naturally occurring MoS2, and from 155 W/mK to 115 W/mK for isotopically pure MoS2, when its thickness increases from one layer to three layers. The thermal conductivity of tri-layer MoS2 approaches to that of bulk MoS2. Both the change of phonon dispersion and the thickness-induced anharmonicity are important for explaining such a thermal conductivity reduction. The increased anharmonicity in bi-layer MoS2 results in stronger phonon scattering for ZAi modes, which is linked to the breakdown of the symmetry in single-layer MoS2.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Phonon transport in single-layer Mo1-xWxS2 alloy embedded with WS2 nanodomains

Two-dimensional (2-D) transition metal dichalcogenides (TMDs) have shown numerous interesting physical and chemical properties, making them promising materials for electronic, optoelectronic, and energy applications. Tuning thermal conductivity of two-dimensional (2-D) materials could expand their applicability in many of these fields. In this paper, we propose a strategy of using alloying and nanodomains to suppress the thermal conductivity of 2-D materials. To predict the thermal conductivity of 2-D alloy embedded with nanodomains, we employ the Green's function approach to assess the phonon scattering strength due to alloying and nanodomain embedding. Our first-principles-driven phonon Boltzmann transport equation calculations show that the thermal conductivity of single-layer MoS2 can be reduced to less than one-tenth of its intrinsic thermal conductivity after alloying with W and introducing nanodomains due to the strong scattering for both high- and low-frequency phonons. The strategies to further reduce the thermal conductivity are also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Temperature dependence of anisotropic thermal conductivity tensor of bulk black phosphorus

To date, the intrinsic thermal conductivity tensor of bulk black phosphorus (BP), an important 2D material, is still unknown, since recent studies focus on BP flakes not on bulk BP. Here we report the anisotropic thermal conductivity tensor of bulk BP, for temperature range 80 - 300 K. Our measurements are similar to prior measurements on submicron BP flakes along zigzag and armchair axes, but are >25% higher in the through-plane axis, suggesting that phonon mean-free-paths are substantially longer in the through-plane direction. We find that despite the anisotropy in thermal conductivity, phonons are predominantly scattered by the same Umklapp processes in all directions. We also find that the phonon relaxation time is rather isotropic in the basal planes, but is highly anisotropic in the through-plane direction. Our work advances fundamental knowledge of anisotropic scattering of phonons in BP and is an important benchmark for future studies on thermal properties of BP nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Phonon transmission across Mg2Si/Mg2Si1-xSnx interfaces: A first-principles-based atomistic Green's function study

Phonon transmission across interfaces of dissimilar materials has been studied intensively in the recent years by using atomistic simulation tools owing to its importance in determining the effective thermal conductivity of nanostructured materials. Atomistic Green's function (AGF) method with interatomic force constants from the first-principles (FP) calculations has evolved to be a promising approach to study phonon transmission in many not well-studied material systems. However, the direct FP calculation for interatomic force constants becomes infeasible when the system involves atomic disorder. Mass approximation is usually used, but its validity has not been tested. In this paper, we employ the higher-order force constant model to extract harmonic force constants from the FP calculations, which originates from the virtual crystal approximation but considers the local force-field difference. As a feasibility demonstration of the proposed method that integrates higher-order force constant model from the FP calculations with the AGF, we study the phonon transmission in the Mg2Si/Mg2Si1-xSnx systems. When integrated with the AGF, the widely-used mass approximation is found to overpredict phonon transmission across Mg2Si/Mg2Sn interface. The difference can be attributed to the absence of local strain field-induced scattering in the mass approximation, which makes the high-frequency phonons less scattered. The frequency-dependent phonon transmission across an interface between a crystal and an alloy, which often appears in high efficiency "nanoparticle in alloy" thermoelectric materials, is studied. The interfacial thermal resistance across Mg2Si/Mg2Si1-xSnx interface is found to be weakly dependent on the composition of Sn when the composition x is less than 40%, but increases rapidly when it is larger than 40% due to the transition of high-frequency phonon DOS in Mg2Si1-xSnx alloys.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Revealing the Anisotropic Thermal Conductivity of Black Phosphorus using the Time-Resolved Magneto-Optical Kerr Effect

Black phosphorus (BP) has emerged as a direct-bandgap semiconducting material with great application potentials in electronics, photonics, and energy conversion. Experimental characterization of the anisotropic thermal properties of BP, however, is extremely challenging due to the lack of reliable and accurate measurement techniques to characterize anisotropic samples that are micrometers in size. Here, we report measurement results of the anisotropic thermal conductivity of bulk BP along three primary crystalline orientations, using the novel time-resolved magneto-optical Kerr effect (TR-MOKE) with enhanced measurement sensitivities. Two-dimensional beam-offset TR-MOKE signals from BP flakes yield the thermal conductivity along the zigzag crystalline direction to be 84 ~ 101 W/(m*K), nearly three times as large as that along the armchair direction (26 ~ 36 W/(m*K)). The through-plane thermal conductivity of BP ranges from 4.3 to 5.5 W/(m*K). The first-principles calculation was performed for the first time to predict the phonon transport in BP both along the in-plane zigzag and armchair directions and along the through-plane direction. This work successfully unveiled the fundamental mechanisms of anisotropic thermal transport along the three crystalline directions in bulk BP, as demonstrated by the excellent agreement between our first-principles-based theoretical predictions and experimental characterizations on the anisotropic thermal conductivities of bulk BP.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A new regime of nanoscale thermal transport: collective diffusion counteracts dissipation inefficiency

Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics, thermoelectric devices, nano-enhanced photovoltaics and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths in a material, the length scales of the heat sources, and the distance over which heat is transported. Past work has shown that Fourier's law for heat conduction dramatically over-predicts the rate of heat dissipation from heat sources with dimensions smaller than the mean free path of the dominant heat-carrying phonons. In this work, we uncover a new regime of nanoscale thermal transport that dominates when the separation between nanoscale heat sources is small compared with the dominant phonon mean free paths. Surprisingly, the interplay between neighboring heat sources can facilitate efficient, diffusive-like heat dissipation, even from the smallest nanoscale heat sources. This finding suggests that thermal management in nanoscale systems including integrated circuits might not be as challenging as projected. Finally, we demonstrate a unique and new capability to extract mean free path distributions of phonons in materials, allowing the first experimental validation of differential conductivity predictions from first-principles calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

First-Principles Prediction of Phononic Thermal Conductivity of Silicene: a Comparison with Graphene

There has been great interest in two-dimensional materials, beyond graphene, for both fundamental sciences and technological applications. Silicene, a silicon counterpart of graphene, has been shown to possess some better electronic properties than graphene. However, its thermal transport properties have not been fully studied. In this paper, we apply the first-principles-based phonon Boltzmann transport equation to investigate the thermal conductivity of silicene as well as the phonon scattering mechanisms. Although both graphene and silicene are two-dimensional crystals with similar crystal structure, we find that phonon transport in silicene is quite different from that in graphene. The thermal conductivity of silicene shows a logarithmic increase with respect to the sample size due to the small scattering rates of acoustic in-plane phonon modes, while that of graphene is finite. Detailed analysis of phonon scattering channels shows that the linear dispersion of the acoustic out-of-plane (ZA) phonon modes, which is induced by the buckled structure, makes the long-wavelength longitudinal acoustic (LA) phonon modes in silicene not as efficiently scattered as that in graphene. Compared with graphene, where most of the heat is carried by the acoustic out-of-plane (ZA) phonon modes, the ZA phonon modes in silicene only have ~10% contribution to the total thermal conductivity, which can also be attributed to the buckled structure. This systematic comparison of phonon transport and thermal conductivity of silicene and graphene using the first-principle-based calculations shed some light on other two-dimensional materials, such as two-dimensional transition metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Phonon Transport in Single-Layer Transition Metal Dichalcogenides: a First-Principles Study

Two-dimensional transition metal dichalcogenides (TMDCs) are finding promising electronic and optical applications due to their unique properties. In this letter, we systematically study the phonon transport and thermal conductivity of eight semiconducting single-layer TMDCs, MX2 (M=Mo, W, Zr and Hf, X=S and Se), by using the first-principles-driven phonon Boltzmann transport equation approach. The validity of the single-mode relaxation time approximation to predict the thermal conductivity of TMDCs is assessed by comparing the results with the iterative solution of the phonon Boltzmann transport equation. We find that the phononic thermal conductivities of 2H-type TMDCs are above 50 W/mK at room temperature while the thermal conductivity values of the 1T-type TMDCs are much lower, when the size of the sample is 1 μm. A very high thermal conductivity value of 142 W/mK was found in single-layer WS2. The large atomic weight difference between W and S leads to a very large phonon bandgap which in turn forbids the scattering between acoustic and optical phonon modes and thus resulting in very long phonon relaxation time.

0 citations0 reviewsNo code linkedOpen access