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Researcher profile

Xiaokun Gu

Xiaokun Gu contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.comp-phphysics.geo-ph

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Published work

5 published item(s)

preprint2021arXiv

The Energy Efficiency of Interfacial Solar Desalination: Insights from Detailed Theoretical Analysis

Solar-thermal evaporation, a traditional steam generation method for solar desalination, has received numerous attentions in recent years due to the significant increase in efficiency by adopting interfacial evaporation. While most of the previous studies focus on improving the evaporation efficiency by materials innovation and system design, the underlying mechanisms of its energy efficiency are less explored, leading to many confusions and misunderstandings. Herein, we clarify these mechanisms with a detailed thermal analysis model. Using this model, we elucidate the advantages of interfacial evaporation over the traditional evaporation method. Furthermore, we clarify the role of tuning the solar flux and surface area on the evaporation efficiency. Moreover, we quantitatively prove that the influence of environmental conditions on evaporation efficiency could not be eliminated by subtracting the dark evaporation rate from evaporation rate under solar. We also find that interfacial evaporation in a solar still does not have the high overall solar desalination efficiency as expected, but further improvement is possible from the system design part. Our analysis gains insights to the thermal processes involved in interfacial solar evaporation and offers perspectives to the further development of interfacial solar desalination technology.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anomalous thermal transport in metallic transition-metal nitrides originated from strong electron-phonon interactions

Metallic transition-metal nitrides (TMNs) are promising conductive ceramics for many applications, whose thermal transport is of great importance in device design. It is found metallic TiN and HfN hold anomalous thermal transport behaviors compared to common metals and nonmetallic TMNs. They have extremely large intrinsic phonon thermal conductivity mainly due to the large acoustic-optic phonon frequency gaps. The phonon thermal conductivity is reduced by two orders of magnitude as the phonon-isotope and phonon-electron scatterings are considered, which also induce the nontrivial temperature-independent behavior of phonon thermal conductivity. Nesting Fermi surfaces exist in both TiN and HfN, which cause the strong electron-phonon coupling strengths and heavily harm the transport of phonons and electrons. The phonon component takes an abnormally large ratio in total thermal conductivity, as 29% for TiN and 26% for HfN at 300 K. The results for thin films are also presented and it is shown that the phonon thermal conductivity can be efficiently limited by size. Our findings provide a deep understanding on the thermal transport in metallic TMNs and expand the scope of heat conduction theory in metal.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Seeking for low thermal conductivity atomic configurations in $\rm{Si_{0.5}Ge_{0.5}}$ alloys with Bayesian Optimization

The emergence of data-driven science has opened up new avenues for understanding the thermophysical properties of materials. For decades, alloys are known to possess very low thermal conductivity, but the extreme thermal conductivity can be achieved by alloying has never been identified. In this work, we combine the Bayesian optimization with a high throughput thermal conductivity calculation to search for the lowest thermal conductivity atomic configuration of $\rm{Si_{0.5}Ge_{0.5}}$ alloy. It is found layered structures are most beneficial for reducing the thermal conductivity among all atomic configurations, which is attributed to the strong branch-folding effect. Furthermore, the roles of interface roughness and layer thicknesses in producing the lowest thermal conductivity are investigated. Through another comprehensive search using Bayesian optimization, the layered structure with smooth interfaces and optimized layer thickness arrangement is identified as the optimal structure with the lowest thermal conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Thermal conductivity of intrinsic semiconductor at elevated temperature: role of four-phonon scattering and electronic heat conduction

While using first-principles-based Boltzmann transport equation approach to predict the thermal conductivity of crystalline semiconductor materials has been a routine, the validity of the approach is seldom tested for high-temperature conditions. Most previous studies only focused on the phononic contribution, and neglected the electronic part. Meanwhile, the treatment on phonon transport is not rigorous as a few ingredients, such as four-phonon scatterings, phonon renormalization and thermal expansion, are ignored. In this paper, we present a Boltzmann transport equation study on high-temperature thermal conduction in bulk silicon by considering the effects of both phonons and electrons, and explore the role of the missing parts in the previous studies on the thermal conductivity at elevated temperature. For the phonon transport, four-phonon scattering is found to considerably reduce the thermal conductivity when the temperature is larger than 700 K, while the effects of phonon renormalization and thermal expansion on phononic thermal conductivity are negligible. Bipolar contribution to the electronic thermal conductivity calculated from first-principles is implemented for the first time. More than 25% of heat is shown to be conducted by electrons at 1500 K. The computed total thermal conductivity of silicon faithfully reproduces the measured data. The approach presented in this paper is expected to be applied to other high-temperature functional materials, and the results could serve as benchmarks and help to explain the high-temperature phonon and electron transport phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A minimal Tersoff potential for diamond silicon with improved descriptions of elastic and phonon transport properties

Silicon is an important material and many empirical interatomic potentials have been developed for atomistic simulations of it. Among them, the Tersoff potential and its variants are the most popular ones. However, all the existing Tersoff-like potentials fail to reproduce the experimentally measured thermal conductivity of diamond silicon. Here we propose a modified Tersoff potential and develop an efficient open source code called GPUGA (graphics processing units genetic algorithm) based on the genetic algorithm and use it to fit the potential parameters against energy, virial and force data from quantum density functional theory calculations. This potential, which is implemented in the efficient open source GPUMD (graphics processing units molecular dynamics) code, gives significantly improved descriptions of the thermal conductivity and phonon dispersion of diamond silicon as compared to previous Tersoff potentials and at the same time well reproduces the elastic constants. Furthermore, we find that quantum effects on the thermal conductivity of diamond silicon at room temperature are non-negligible but small: using classical statistics underestimates the thermal conductivity by about 10\% as compared to using quantum statistics.

0 citations0 reviewsNo code linkedOpen access