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Ronggui Yang

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Published work

20 published item(s)

preprint2023arXiv

Thermo-optic phase shifter based on hydrogen-doped indium oxide microheater

Thermo-optic (TO) phase shifters are very fundamental units in large-scale active silicon photonic integrated circuits (PICs). However, due to the limitation of microheater materials with a trade-off between heating efficiency and absorption loss, designs reported so far typically suffer from slow response time, high power consumption, low yields, and so on. Here, we demonstrate an energy-efficient, fast-response, and low-loss TO phase shifter by introducing hydrogen-doped indium oxide (IHO) films as microheater, and the optimized electron concentration with enhanced mobility endows the IHO high conductivity as well as high near-infrared (NIR) transparency, which allow it to directly contact the silicon waveguide without any insulating layer for efficient tuning and fast response. The TO phase shifter achieves a sub-microsecond response time (970 ns/980 ns) with a π phase shift power consumption of 9.6 mW. And the insertion loss introduced by the IHO microheater is ~ 0.5 dB. The proposed IHO-based microheaters with compatible processing technology illustrate the great potential of such material in the application of large-scale silicon PICs.

preprint2022arXiv

Ballistic Thermal Transport at Sub-10 nm Laser-Induced Hot Spots in GaN Crystal

Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its characteristic length reaches the nanometer scale, due to heat dissipation. In this work, we developed a tip-enhanced Raman thermometry approach to study ballistic thermal transport within the range of 10 nm in GaN, simultaneously achieving laser heating and measuring the local temperature. The Raman results showed that the temperature increase from an Au-coated tip-focused hotspot was up to two times higher (40 K) than that in a bare tip-focused region (20 K). To further investigate the possible mechanisms behind this temperature difference, we performed electromagnetic simulations to generate a highly focused heating field, and observed a highly localized optical penetration, within a range of 10 nm. The phonon mean free path (MFP) of the GaN substrate could thus be determined by comparing the numerical simulation results with the experimentally measured temperature increase which was in good agreement with the average MFP weighted by the mode-specific thermal conductivity, as calculated from first-principles simulations. Our results demonstrate that the phonon MFP of a material can be rapidly predicted through a combination of experiments and simulations, which can find wide application in the thermal management of GaN-based electronics.

preprint2021arXiv

Confinement Effect on Thermopower of Electrolytes

Ionic Seebeck effect of electrolytes has shown promising applications in harvesting energy from low-grade waste-heat sources with small temperature difference from the environment, which can power sensors and Internet-of-Things devices. Recent experiments have demonstrated giant thermopower (~ 10 mV/K) of electrolytes under confinement due to the overlapping of electric double layer (EDL). Nonetheless, there has been no consensus on the theory of the ionic Seebeck effect, especially whether the thermopower depends on ionic diffusivities, imposing confusion on the theoretical interpretation of experimental discovery on giant thermopower of confined electrolytes. This article presents a linear perturbative solution of Poisson-Nernst-Planck (PNP) equations to describe the ionic Seebeck effect of confined liquid electrolytes. We provide both analytical and numerical solutions to the PNP equations for closed systems and open systems connected to reservoirs of electrolytes. The analytical solution captured the confinement effect both along and perpendicular to the temperature gradient, and showed excellent agreement with numerically solved PNP equations for a wide range of EDL potentials, channel widths, and lengths. Finally, we show that for polyelectrolytes with largely mismatched diffusivities, thermopower can only be enhanced for closed system through confinement perpendicular to the temperature gradient.

preprint2020arXiv

Tunable Anisotropic Thermal Transport in Super-Aligned Carbon Nanotube Films

Super-aligned carbon nanotube (CNT) films have intriguing anisotropic thermal transport properties due to the anisotropic nature of individual nanotubes and the important role of nanotube alignment. However, the relationship between the alignment and the anisotropic thermal conductivities was not well understood due to the challenges in both the preparation of high-quality super-aligned CNT film samples and the thermal characterization of such highly anisotropic and porous thin films. Here, super-aligned CNT films with different alignment configurations are designed and their anisotropic thermal conductivities are measured using time-domain thermoreflectance (TDTR) with an elliptical-beam approach. The results suggest that the alignment configuration could tune the cross-plane thermal conductivity k_z from 6.4 to 1.5 W/mK and the in-plane anisotropic ratio from 1.2 to 13.5. This work confirms the important role of CNT alignment in tuning the thermal transport properties of super-aligned CNT films and provides an efficient way to design thermally anisotropic films for thermal management.

preprint2016arXiv

Interfacial thermal conductance across metal-insulator/semiconductor interfaces due to surface states

We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992)] and most recently by Hohensee et al. [Nature Commun. 6, 6578 (2015)].

preprint2016arXiv

Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3

Great success has been achieved in improving the photovoltaic energy conversion efficiency of the organic-inorganic perovskite-based solar cells, but with very limited knowledge on the thermal transport in hybrid perovskites, which would affect the device lifetime and stability. Based on the potential developed from the density functional theory calculations, we studied the lattice thermal conductivity of the hybrid halide perovskite CH3NH3PbI3 using equilibrium molecular dynamics simulations. Temperature-dependent thermal conductivity is reported from 160 K to 400 K, which covers the tetragonal phase (160-330 K) and the pseudocubic phase (>330K). A very low thermal conductivity (0.50 W/mK) is found in the tetragonal phase at room temperature, whereas a much higher thermal conductivity is found in the pseudocubic phase (1.80 W/mK at 330 K). The low group velocity of acoustic phonons and the strong anharmonicity are found responsible for the relatively low thermal conductivity of the tetragonal CH3NH3PbI3.

preprint2016arXiv

Layer thickness-dependent phonon properties and thermal conductivity of MoS2

For conventional materials, the thermal conductivity of thin film is usually suppressed when the thickness decreases due to phonon-boundary scattering. However, this is not necessarily true for the van der Waals solids if the thickness is reduced to only a few layers. In this letter, the layer thickness-dependent phonon properties and thermal conductivity in the few-layer MoS2 are studied using the first-principles-based Peierls-Boltzmann transport equation approach. The basal-plane thermal conductivity is found to monotonically reduce from 138 W/mK to 98 W/mK for naturally occurring MoS2, and from 155 W/mK to 115 W/mK for isotopically pure MoS2, when its thickness increases from one layer to three layers. The thermal conductivity of tri-layer MoS2 approaches to that of bulk MoS2. Both the change of phonon dispersion and the thickness-induced anharmonicity are important for explaining such a thermal conductivity reduction. The increased anharmonicity in bi-layer MoS2 results in stronger phonon scattering for ZAi modes, which is linked to the breakdown of the symmetry in single-layer MoS2.

preprint2016arXiv

Phonon transport in single-layer Mo1-xWxS2 alloy embedded with WS2 nanodomains

Two-dimensional (2-D) transition metal dichalcogenides (TMDs) have shown numerous interesting physical and chemical properties, making them promising materials for electronic, optoelectronic, and energy applications. Tuning thermal conductivity of two-dimensional (2-D) materials could expand their applicability in many of these fields. In this paper, we propose a strategy of using alloying and nanodomains to suppress the thermal conductivity of 2-D materials. To predict the thermal conductivity of 2-D alloy embedded with nanodomains, we employ the Green's function approach to assess the phonon scattering strength due to alloying and nanodomain embedding. Our first-principles-driven phonon Boltzmann transport equation calculations show that the thermal conductivity of single-layer MoS2 can be reduced to less than one-tenth of its intrinsic thermal conductivity after alloying with W and introducing nanodomains due to the strong scattering for both high- and low-frequency phonons. The strategies to further reduce the thermal conductivity are also discussed.

preprint2016arXiv

Super-stretchable borophene and its stability under straining

Recent success in synthesizing two-dimensional borophene on silver substrate attracts strong interest in exploring its possible extraordinary physical properties. By using the density functional theory calculations, we show that borophene is highly stretchable along the transverse direction. The strain-to-failure in the transverse direction is nearly twice as that along the longitudinal direction. The straining induced flattening and subsequent stretch of the flat borophene are accounted for the large strain-to-failure for tension in the transverse direction. The mechanical properties in the other two directions exhibit strong anisotropy. Phonon dispersions of the strained borophene monolayers suggest that negative frequencies are presented, which indicates the instability of free-standing borophene even under high tensile stress.

preprint2016arXiv

Temperature dependence of anisotropic thermal conductivity tensor of bulk black phosphorus

To date, the intrinsic thermal conductivity tensor of bulk black phosphorus (BP), an important 2D material, is still unknown, since recent studies focus on BP flakes not on bulk BP. Here we report the anisotropic thermal conductivity tensor of bulk BP, for temperature range 80 - 300 K. Our measurements are similar to prior measurements on submicron BP flakes along zigzag and armchair axes, but are >25% higher in the through-plane axis, suggesting that phonon mean-free-paths are substantially longer in the through-plane direction. We find that despite the anisotropy in thermal conductivity, phonons are predominantly scattered by the same Umklapp processes in all directions. We also find that the phonon relaxation time is rather isotropic in the basal planes, but is highly anisotropic in the through-plane direction. Our work advances fundamental knowledge of anisotropic scattering of phonons in BP and is an important benchmark for future studies on thermal properties of BP nanostructures.

preprint2015arXiv

Capillary rupture of suspended polymer concentric rings

We present the first experimental study on the simultaneous capillary instability amongst viscous concentric rings suspended atop an immiscible medium. The rings ruptured upon annealing, with three types of phase correlation between neighboring rings. In the case of weak substrate confinement, the rings ruptured independently when they were sparsely distanced, but via an out-of-phase mode when packed closer. If the substrate confinement was strong, the rings would rupture via an in-phase mode, resulting in radially aligned droplets. The concentric ring geometry caused a competition between the phase correlation of neighboring rings and the kinetically favorable wavelength, yielding an intriguing, recursive surface pattern. This frustrated pattern formation behavior was accounted for by a scaling analysis.

preprint2015arXiv

Phonon transmission across Mg2Si/Mg2Si1-xSnx interfaces: A first-principles-based atomistic Green's function study

Phonon transmission across interfaces of dissimilar materials has been studied intensively in the recent years by using atomistic simulation tools owing to its importance in determining the effective thermal conductivity of nanostructured materials. Atomistic Green's function (AGF) method with interatomic force constants from the first-principles (FP) calculations has evolved to be a promising approach to study phonon transmission in many not well-studied material systems. However, the direct FP calculation for interatomic force constants becomes infeasible when the system involves atomic disorder. Mass approximation is usually used, but its validity has not been tested. In this paper, we employ the higher-order force constant model to extract harmonic force constants from the FP calculations, which originates from the virtual crystal approximation but considers the local force-field difference. As a feasibility demonstration of the proposed method that integrates higher-order force constant model from the FP calculations with the AGF, we study the phonon transmission in the Mg2Si/Mg2Si1-xSnx systems. When integrated with the AGF, the widely-used mass approximation is found to overpredict phonon transmission across Mg2Si/Mg2Sn interface. The difference can be attributed to the absence of local strain field-induced scattering in the mass approximation, which makes the high-frequency phonons less scattered. The frequency-dependent phonon transmission across an interface between a crystal and an alloy, which often appears in high efficiency "nanoparticle in alloy" thermoelectric materials, is studied. The interfacial thermal resistance across Mg2Si/Mg2Si1-xSnx interface is found to be weakly dependent on the composition of Sn when the composition x is less than 40%, but increases rapidly when it is larger than 40% due to the transition of high-frequency phonon DOS in Mg2Si1-xSnx alloys.

preprint2015arXiv

Revealing the Anisotropic Thermal Conductivity of Black Phosphorus using the Time-Resolved Magneto-Optical Kerr Effect

Black phosphorus (BP) has emerged as a direct-bandgap semiconducting material with great application potentials in electronics, photonics, and energy conversion. Experimental characterization of the anisotropic thermal properties of BP, however, is extremely challenging due to the lack of reliable and accurate measurement techniques to characterize anisotropic samples that are micrometers in size. Here, we report measurement results of the anisotropic thermal conductivity of bulk BP along three primary crystalline orientations, using the novel time-resolved magneto-optical Kerr effect (TR-MOKE) with enhanced measurement sensitivities. Two-dimensional beam-offset TR-MOKE signals from BP flakes yield the thermal conductivity along the zigzag crystalline direction to be 84 ~ 101 W/(m*K), nearly three times as large as that along the armchair direction (26 ~ 36 W/(m*K)). The through-plane thermal conductivity of BP ranges from 4.3 to 5.5 W/(m*K). The first-principles calculation was performed for the first time to predict the phonon transport in BP both along the in-plane zigzag and armchair directions and along the through-plane direction. This work successfully unveiled the fundamental mechanisms of anisotropic thermal transport along the three crystalline directions in bulk BP, as demonstrated by the excellent agreement between our first-principles-based theoretical predictions and experimental characterizations on the anisotropic thermal conductivities of bulk BP.

preprint2015arXiv

Steady State and Modulated Heat Conduction in Layered Systems Predicted by the Phonon Boltzmann Transport Equation

Based on the phonon Boltzmann transport equation under the relaxation time approximation, analytical expressions for the temperature profiles of both steady state and modulated heat conduction inside a thin film deposited on a substrate are derived and analyzed. It is shown that both steady state and modulated components of the temperature depend strongly on the ratio between the film thickness and the average phonon mean free path, and they exhibit the diffusive behavior as predicted by the Fourier law of heat conduction when this ratio is much larger than the unity. In contrast, in the ballistic regime when this ratio is comparable to or smaller than the unity, the steady-state temperature tends to be independent of position, while the amplitude and the phase of the modulated temperature appear to be lower than those determined by the Fourier law. Furthermore, we derived an invariant of heat conduction and a simple formula for the cross-plane thermal conductivity of dielectric thin films, which could be a useful guide for understanding and optimizing the thermal performance of the layered systems. This work represents the Boltzmann transport equation-based extension of the Rosencwaig and Gerko work [J. Appl. Phys. 47, 64 (1976)], which is based on the Fourier law and has widely been used as the theoretical framework for the development of photoacoustic and photothermal techniques. This work might shed some light on developing a theoretical basis for the determination of the phonon MFP and relaxation time using ultrafast laser-based transient heating techniques.

preprint2014arXiv

A new regime of nanoscale thermal transport: collective diffusion counteracts dissipation inefficiency

Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics, thermoelectric devices, nano-enhanced photovoltaics and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths in a material, the length scales of the heat sources, and the distance over which heat is transported. Past work has shown that Fourier's law for heat conduction dramatically over-predicts the rate of heat dissipation from heat sources with dimensions smaller than the mean free path of the dominant heat-carrying phonons. In this work, we uncover a new regime of nanoscale thermal transport that dominates when the separation between nanoscale heat sources is small compared with the dominant phonon mean free paths. Surprisingly, the interplay between neighboring heat sources can facilitate efficient, diffusive-like heat dissipation, even from the smallest nanoscale heat sources. This finding suggests that thermal management in nanoscale systems including integrated circuits might not be as challenging as projected. Finally, we demonstrate a unique and new capability to extract mean free path distributions of phonons in materials, allowing the first experimental validation of differential conductivity predictions from first-principles calculations.

preprint2014arXiv

An Electrohydrodynamics Model for Non-equilibrium Electron and Phonon Transport in Metal Films after Ultra-short Pulse Laser Heating

The electrons and phonons in metal films after ultra-short pulse laser heating are in highly non-equilibrium states not only between the electron sub-system and the phonon sub-system but also within the electron sub-system. An electrohydrodynamics model consisting of the balance equations of electron density, energy density of electrons, and energy density of phonons is derived from the coupled non-equilibrium electron and phonon Boltzmann transport equations to study the nonlinear transport phenomena, such as the electron density fluctuation and the transient electrical current in metal films, after ultra-short pulse laser heating. The time-dependent temperature distributions is calculated by the coupled electron and phonon Boltzmann transport equations, the electrohydrodynamics model derived in this work, and the two-temperature model for different laser pulse durations, film thicknesses, and laser fluences. We find that the two-temperature model overestimates the electron temperature at the frontsurface of the film and underestimates the damage threshold when the nonlinear thermal transport of electrons is important. The electrohydrodynamics model proposedin this work could be a more accurate prediction tool to study the non-equilibrium electron phonon transport process than the two-temperature model and it is much easier to be solved than the coupled electron and phonon Boltzmann transport equations.

preprint2014arXiv

First-Principles Prediction of Phononic Thermal Conductivity of Silicene: a Comparison with Graphene

There has been great interest in two-dimensional materials, beyond graphene, for both fundamental sciences and technological applications. Silicene, a silicon counterpart of graphene, has been shown to possess some better electronic properties than graphene. However, its thermal transport properties have not been fully studied. In this paper, we apply the first-principles-based phonon Boltzmann transport equation to investigate the thermal conductivity of silicene as well as the phonon scattering mechanisms. Although both graphene and silicene are two-dimensional crystals with similar crystal structure, we find that phonon transport in silicene is quite different from that in graphene. The thermal conductivity of silicene shows a logarithmic increase with respect to the sample size due to the small scattering rates of acoustic in-plane phonon modes, while that of graphene is finite. Detailed analysis of phonon scattering channels shows that the linear dispersion of the acoustic out-of-plane (ZA) phonon modes, which is induced by the buckled structure, makes the long-wavelength longitudinal acoustic (LA) phonon modes in silicene not as efficiently scattered as that in graphene. Compared with graphene, where most of the heat is carried by the acoustic out-of-plane (ZA) phonon modes, the ZA phonon modes in silicene only have ~10% contribution to the total thermal conductivity, which can also be attributed to the buckled structure. This systematic comparison of phonon transport and thermal conductivity of silicene and graphene using the first-principle-based calculations shed some light on other two-dimensional materials, such as two-dimensional transition metal dichalcogenides.

preprint2014arXiv

Inhomogeneous Thermal Conductivity Enhances Thermoelectric Cooling

We theoretically investigate the enhancement of thermoelectric cooling performance in thermoelectric devices made of materials with inhomogeneous thermal conductivity, beyond the usual practice of enhancing thermoelectric figure of merit ZT. The dissipation of Joule heat in such thermoelectric devices is asymmetric which can give rise to better thermoelectric cooling performance. Although the thermoelectric figure of merit and the coefficient-of-performance are only slightly enhanced, both the maximum cooling power and the maximum cooling temperature difference can be enhanced significantly. This finding can be used to increase the heat absorption at the cold end. The asymmetric dissipation of Joule heat also leads to thermal rectification.

preprint2014arXiv

Phonon Transport in Single-Layer Transition Metal Dichalcogenides: a First-Principles Study

Two-dimensional transition metal dichalcogenides (TMDCs) are finding promising electronic and optical applications due to their unique properties. In this letter, we systematically study the phonon transport and thermal conductivity of eight semiconducting single-layer TMDCs, MX2 (M=Mo, W, Zr and Hf, X=S and Se), by using the first-principles-driven phonon Boltzmann transport equation approach. The validity of the single-mode relaxation time approximation to predict the thermal conductivity of TMDCs is assessed by comparing the results with the iterative solution of the phonon Boltzmann transport equation. We find that the phononic thermal conductivities of 2H-type TMDCs are above 50 W/mK at room temperature while the thermal conductivity values of the 1T-type TMDCs are much lower, when the size of the sample is 1 μm. A very high thermal conductivity value of 142 W/mK was found in single-layer WS2. The large atomic weight difference between W and S leads to a very large phonon bandgap which in turn forbids the scattering between acoustic and optical phonon modes and thus resulting in very long phonon relaxation time.

preprint2013arXiv

Mechanics and Tunable Bandgap by Straining in Single-Layer Hexagonal Boron-Nitride

Current interest in two-dimensional materials extends from graphene to others systems like single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures to achieve exceptional properties that cannot be realized in graphene.The electrically insulating h-BN and semi-metal graphene may open good opportunities to realize a semiconductor by manipulating the morphology and composition of such heterogeneous structures.Here we report the mechanical properties of h-BN and its band structures tuned by mechanical straining by using the density functional theory calculations.The elastic properties, both the Young's modulus and bending rigidity for h-BN, are isotropic.We reveal that there is a bi-linear dependence of band gap on the applied tensile strains in h-BN. Mechanical strain can tune single-layer h-BN from an insulator to a semiconductor, with a band gap in the 4.7eV to 1.5eV range.