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Shouhang Li

Shouhang Li contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Anomalous thermal transport in metallic transition-metal nitrides originated from strong electron-phonon interactions

Metallic transition-metal nitrides (TMNs) are promising conductive ceramics for many applications, whose thermal transport is of great importance in device design. It is found metallic TiN and HfN hold anomalous thermal transport behaviors compared to common metals and nonmetallic TMNs. They have extremely large intrinsic phonon thermal conductivity mainly due to the large acoustic-optic phonon frequency gaps. The phonon thermal conductivity is reduced by two orders of magnitude as the phonon-isotope and phonon-electron scatterings are considered, which also induce the nontrivial temperature-independent behavior of phonon thermal conductivity. Nesting Fermi surfaces exist in both TiN and HfN, which cause the strong electron-phonon coupling strengths and heavily harm the transport of phonons and electrons. The phonon component takes an abnormally large ratio in total thermal conductivity, as 29% for TiN and 26% for HfN at 300 K. The results for thin films are also presented and it is shown that the phonon thermal conductivity can be efficiently limited by size. Our findings provide a deep understanding on the thermal transport in metallic TMNs and expand the scope of heat conduction theory in metal.

preprint2020arXiv

Thermal conductivity of intrinsic semiconductor at elevated temperature: role of four-phonon scattering and electronic heat conduction

While using first-principles-based Boltzmann transport equation approach to predict the thermal conductivity of crystalline semiconductor materials has been a routine, the validity of the approach is seldom tested for high-temperature conditions. Most previous studies only focused on the phononic contribution, and neglected the electronic part. Meanwhile, the treatment on phonon transport is not rigorous as a few ingredients, such as four-phonon scatterings, phonon renormalization and thermal expansion, are ignored. In this paper, we present a Boltzmann transport equation study on high-temperature thermal conduction in bulk silicon by considering the effects of both phonons and electrons, and explore the role of the missing parts in the previous studies on the thermal conductivity at elevated temperature. For the phonon transport, four-phonon scattering is found to considerably reduce the thermal conductivity when the temperature is larger than 700 K, while the effects of phonon renormalization and thermal expansion on phononic thermal conductivity are negligible. Bipolar contribution to the electronic thermal conductivity calculated from first-principles is implemented for the first time. More than 25% of heat is shown to be conducted by electrons at 1500 K. The computed total thermal conductivity of silicon faithfully reproduces the measured data. The approach presented in this paper is expected to be applied to other high-temperature functional materials, and the results could serve as benchmarks and help to explain the high-temperature phonon and electron transport phenomena.