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Xiaogang Peng

Xiaogang Peng contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2023arXiv

More comprehensive facial inversion for more effective expression recognition

Facial expression recognition (FER) plays a significant role in the ubiquitous application of computer vision. We revisit this problem with a new perspective on whether it can acquire useful representations that improve FER performance in the image generation process, and propose a novel generative method based on the image inversion mechanism for the FER task, termed Inversion FER (IFER). Particularly, we devise a novel Adversarial Style Inversion Transformer (ASIT) towards IFER to comprehensively extract features of generated facial images. In addition, ASIT is equipped with an image inversion discriminator that measures the cosine similarity of semantic features between source and generated images, constrained by a distribution alignment loss. Finally, we introduce a feature modulation module to fuse the structural code and latent codes from ASIT for the subsequent FER work. We extensively evaluate ASIT on facial datasets such as FFHQ and CelebA-HQ, showing that our approach achieves state-of-the-art facial inversion performance. IFER also achieves competitive results in facial expression recognition datasets such as RAF-DB, SFEW and AffectNet. The code and models are available at https://github.com/Talented-Q/IFER-master.

preprint2020arXiv

Deciphering exciton-generation processes in quantum-dot electroluminescence

Electroluminescence (EL) of colloidal nanocrystals promises a new generation of high-performance and solution-processable light-emitting diodes (LEDs). The operation of nanocrystal-based LEDs relies on the recombination of electrically-generated excitons. However, a fundamental question, i.e, how excitons are electrically generated in individual nanocrystals, remains unanswered. Here, we reveal a molecular mechanism of sequential electron-hole injection for the exciton generation in nanocrystal-based EL devices. To decipher the corresponding elementary processes, we develop electrically-pumped single-nanocrystal spectroscopy. While hole injection into neutral quantum dots (QDs) is generally-considered to be inefficient, we find that the intermediate negatively-charged state of QD triggers confinement-enhanced Coulomb interactions, which simultaneously accelerate hole injection and hinder excessive electron injection. In-situ/operando spectroscopy on state-of-the-art QD-LEDs demonstrate that exciton generation at the ensemble level is consistent with the charge-confinement-enabled sequential electron-hole injection mechanism revealed at the single-nanocrystal level. Our findings provide a universal mechanism for enhancing charge balance in nanocrystal-based EL devices.

preprint2019arXiv

Electrochemically-stable ligands bridge photoluminescence-electroluminescence gap of quantum dots

Colloidal quantum dots (QDs) are promising emitters for electroluminescence devices (QD light-emitting-diodes, QLEDs). Though QDs have been synthesized with efficient and stable photoluminescence, inheriting their superior luminescence in QLEDs remains challenging. This is commonly attributed to unbalanced charge injection and/or interfacial exciton quenching in the devices, instead of lack of suited QD materials. Here, a general but previously overlooked degradation channel in QLEDs, i.e., operando electrochemical reactions of surface ligands with injected charge carriers, is identified after systematic studies of various combination of core/shell QDs and ligands. Applying electrochemically-inert ligands to highly photoluminescent QDs is developed to bridge their photoluminescence-electroluminescence gap. This material-design principle is general for boosting electroluminescence efficiency and lifetime of the QLEDs, resulting in record-long operational lifetimes for both red-emitting QLEDs (T95 > 3800 hours at 1000 cd m-2) and blue-emitting QLEDs (T50 >10,000 hours at 100 cd m-2). Our study provides a critical guideline for the QDs to be used in optoelectronic and electronic devices.