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Dawei Di

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physics.app-ph physics.optics cond-mat.mtrl-sci

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preprint2021arXiv

High-performance green and blue quantum-dot light-emitting diodes with eliminated charge leakage

Quantum-dot light-emitting diodes (QD-LEDs) promise a new generation of efficient, low-cost, large-area, and flexible electroluminescent devices. However, the inferior performance of green and blue QD-LEDs is hindering the commercialization of QD-LEDs in display and solid-state lighting. Here, we demonstrate best-performing green and blue QD-LEDs with ~100% conversion of the injected charge carriers into emissive excitons. Key to this success is eliminating electron leakage at the organic/inorganic interface by using hole-transport polymers with low electron affinity and reduced energetic disorder. Our devices exhibit record-high peak external quantum efficiencies (28.7% for green, 21.9% for blue), exceptionally high efficiencies in wide ranges of luminance, and unprecedented stability (T95 lifetime: 580,000 h for green, 4,400 h for blue). The overall performance surpasses previously reported solution-processed green and blue LEDs.

preprint2021arXiv

Ultralow-voltage operation of light-emitting diodes

The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including perovskite and organic LEDs, that the minimum voltage required for light emission is the semiconductor bandgap divided by the elementary charge. Here we show for many classes of LEDs, including those based on metal halide perovskite, organic, chalcogenide quantum-dot and commercial III-V semiconductors, photon emission can be generally observed at record-low driving voltages of 36%-60% of their bandgaps, corresponding to a large apparent energy gain of 0.6-1.4 eV per emitted photon. Importantly, for various classes of LEDs with very different modes of charge injection and recombination (dark saturation current densities ranging from ~10^-35 to ~10^-21 mA/cm2), their EL intensity-voltage curves under low voltages exhibit similar behaviors, revealing a universal origin of ultralow-voltage device operation. Finally, we demonstrate as a proof-of-concept that perovskite LEDs can transmit data efficiently to a silicon detector at 1V, a voltage below the silicon bandgap. Our work provides a fresh insight into the operational limits of electroluminescent diodes, highlighting the significant potential of integrating low-voltage LEDs with silicon electronics for next-generation communications and computational applications.

preprint2020arXiv

Deciphering exciton-generation processes in quantum-dot electroluminescence

Electroluminescence (EL) of colloidal nanocrystals promises a new generation of high-performance and solution-processable light-emitting diodes (LEDs). The operation of nanocrystal-based LEDs relies on the recombination of electrically-generated excitons. However, a fundamental question, i.e, how excitons are electrically generated in individual nanocrystals, remains unanswered. Here, we reveal a molecular mechanism of sequential electron-hole injection for the exciton generation in nanocrystal-based EL devices. To decipher the corresponding elementary processes, we develop electrically-pumped single-nanocrystal spectroscopy. While hole injection into neutral quantum dots (QDs) is generally-considered to be inefficient, we find that the intermediate negatively-charged state of QD triggers confinement-enhanced Coulomb interactions, which simultaneously accelerate hole injection and hinder excessive electron injection. In-situ/operando spectroscopy on state-of-the-art QD-LEDs demonstrate that exciton generation at the ensemble level is consistent with the charge-confinement-enabled sequential electron-hole injection mechanism revealed at the single-nanocrystal level. Our findings provide a universal mechanism for enhancing charge balance in nanocrystal-based EL devices.