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Xiao Renshaw Wang

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph physics.optics quant-ph

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preprint2022arXiv

Nonreciprocal transport in a bilayer of MnBi2Te4 and Pt

MnBi2Te4 (MBT) is the first intrinsic magnetic topological insulator with the interaction of spin-momentum locked surface electrons and intrinsic magnetism, and it exhibits novel magnetic and topological phenomena. Recent studies suggested that the interaction of electrons and magnetism can be affected by the Mn-doped Bi2Te3 phase at the surface due to inevitable structural defects. Here we report an observation of nonreciprocal transport, i.e. current-direction-dependent resistance, in a bilayer composed of antiferromagnetic MBT and nonmagnetic Pt. The emergence of the nonreciprocal response below the Néel temperature confirms a correlation between nonreciprocity and intrinsic magnetism in the surface state of MBT. The angular dependence of the nonreciprocal transport indicates that nonreciprocal response originates from the asymmetry scattering of electrons at the surface of MBT mediated by magnon. Our work provides an insight into nonreciprocity arising from the correlation between magnetism and Dirac surface electrons in intrinsic magnetic topological insulators.

preprint2022arXiv

Recent Advances in Tunable Metasurfaces: Materials, Design and Applications

Metasurfaces, a two-dimensional (2D) form of metamaterials constituted by planar meta-atoms, exhibit exotic abilities to freely tailor electromagnetic (EM) waves. Over the past decade, tunable metasurfaces have come to the frontier in the field of nanophotonics, with tremendous effort focused on developing and integrating various active materials into metasurfaces. As a result, tunable/reconfigurable metasurfaces with multi-functionalities triggered by various external stimuli have been successfully demonstrated, openings a new avenue to dynamically manipulate and control EM waves for photonic applications in demand. In this review, we first brief the progress of tunable metasurfaces development in the last decade and highlight representative works from the perspectives of active materials development, design methodologies and application-driven exploration. Then, we elaborate on the active tuning mechanisms and relevant active materials. Next, we discuss recent achievements in theory as well as machine learning (ML) assisted design methodologies to sustain the development of this field. After that, we summarize and describe typical application areas of the tunable metasurfaces. We conclude this review by analyzing existing challenges and presenting our perspectives on future directions and opportunities in this vibrant and fast-developing field.

preprint2019arXiv

Phase-controllable growth of ultrathin 2D magnetic FeTe crystals

Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronics devices. However, the synthesis of 2D magnetic crystals, especially the direct growth on SiO2/Si substrate, is just in its infancy. Here, we report a chemical vapor deposition (CVD)-based rational growth approach for the synthesis of ultrathin FeTe crystals with controlled structural and magnetic phases. By precisely optimizing the growth temperature (Tgrowth), FeTe nanoplates with either layered tetragonal or non-layered hexagonal phase can be controlled with high-quality. The two controllable phases lead to square and triangular morphologies with a thickness down to 3.6 and 2.8 nm, respectively. More importantly, transport measurements reveal that tetragonal FeTe is antiferromagnetic with a Neel temperature (TN) about 71.8 K, while hexagonal FeTe is ferromagnetic with a Curie temperature (TC) around 220 K. Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from a concomitant lattice distortion and the spin-lattice coupling. This study represents a major step forward in the CVD growth of 2D magnetic materials on SiO2/Si substrates and highlights on their potential applications in the future spintronic devices.