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Researcher profile

Chuang-Han Hsu

Chuang-Han Hsu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallquant-ph

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Published work

8 published item(s)

preprint2022arXiv

Glide Symmetry Protected Higher-Order Topological Insulators from Semimetals with butterfly-like Nodal Lines

Most topological insulators discovered today in spinful systems can be transformed from topological semimetals (TSMs) with vanishing bulk gap via introducing the spin-orbit coupling (SOC), which manifests the intrinsic links between the gapped TI phases and the gapless TSMs. Recently, we have proposed a new family of TSMs in time-reversal invariant {\it spinless} systems, which host butterfly-like nodal-lines (NLs) consisting of a pair of identical concentric intersecting coplanar ellipses (CICE). In this Communication, we unveil the intrinsic link between this exotic class of nodal-line semimetals (NLSMs) and a $\mathbb{Z}_{4}$ = 2 topological crystalline insulator (TCI), by including substantial SOC. We demonstrate that in three space groups ({\it i.e.} $Pbam$ (No.55), $P4/mbm$ (No.127) and $P4_2/mbc$ (No.135)), the TCI supports a fourfold Dirac fermion on the (001) surface protected by two glide symmetries, which originates from the intertwined drumhead surface states of the CICE NLs. The higher order topology is further demonstrated by the emergence of one-dimensional helical hinge states, indicating a new higher order topological insulator protected by a glide symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Low-symmetry topological materials for large charge-to-spin interconversion: The case of transition metal dichalcogenide monolayers

The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments on few-layer ${\rm MoTe}_2$ and ${\rm WTe}_2$ showed that the reduced symmetry of these strong spin-orbit coupling materials enables a new form of {\it canted} spin Hall effect, characterized by concurrent in-plane and out-of-plane spin polarizations. Here, through quantum transport calculations on realistic device geometries, including disorder, we predict a very large gate-tunable SHE figure of merit $λ_sθ_{xy}\sim 1\text{--}50$ nm in ${\rm MoTe}_2$ and ${\rm WTe}_2$ monolayers that significantly exceeds values of conventional SHE materials. This stems from a concurrent long spin diffusion length ($λ_s$) and charge-to-spin interconversion efficiency as large as $θ_{xy} \approx 80$\%, originating from momentum-invariant (persistent) spin textures together with large spin Berry curvature along the Fermi contour, respectively. Generalization to other materials and specific guidelines for unambiguous experimental confirmation are proposed, paving the way towards exploiting such phenomena in spintronic devices. These findings vividly emphasize how crystal symmetry and electronic topology can govern the intrinsic SHE and spin relaxation, and how they may be exploited to broaden the range and efficiency of spintronic materials and functionalities.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nonreciprocal transport in a bilayer of MnBi2Te4 and Pt

MnBi2Te4 (MBT) is the first intrinsic magnetic topological insulator with the interaction of spin-momentum locked surface electrons and intrinsic magnetism, and it exhibits novel magnetic and topological phenomena. Recent studies suggested that the interaction of electrons and magnetism can be affected by the Mn-doped Bi2Te3 phase at the surface due to inevitable structural defects. Here we report an observation of nonreciprocal transport, i.e. current-direction-dependent resistance, in a bilayer composed of antiferromagnetic MBT and nonmagnetic Pt. The emergence of the nonreciprocal response below the Néel temperature confirms a correlation between nonreciprocity and intrinsic magnetism in the surface state of MBT. The angular dependence of the nonreciprocal transport indicates that nonreciprocal response originates from the asymmetry scattering of electrons at the surface of MBT mediated by magnon. Our work provides an insight into nonreciprocity arising from the correlation between magnetism and Dirac surface electrons in intrinsic magnetic topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Unconventional Resistivity Scaling in Topological Semimetal CoSi

Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may highly impact the semiconductor industry. Here we study the resistivity scaling of a representative topological semimetal CoSi using realistic band structures and Green's function methods. We show that there exists a critical thickness d_c dividing different scaling trends. Above d_c, when the defect density is low such that surface conduction dominates, resistivity reduces with decreasing thickness; when the defect density is high such that bulk conduction dominates, resistivity increases in as conventional metals. Below d_c, the persistent remnants of the surface states give rise to decreasing resistivity down to the ultrathin limit, unlike in topological insulators. The observed CoSi scaling can apply to broad classes of topological semimetals, providing guidelines for materials screening and engineering. Our study shows that topological semimetals bear the potential of overcoming the resistivity scaling challenges in back-end-of-line interconnect applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Bond-breaking Induced Lifshitz Transition in Robust Dirac Semimetal $\mathbf{VAl_3}$

Topological electrons in semimetals are usually vulnerable to chemical doping and environment change, which restricts their potential application in future electronic devices. In this paper we report that the type-II Dirac semimetal $\mathbf{VAl_3}$ hosts exceptional, robust topological electrons which can tolerate extreme change of chemical composition. The Dirac electrons remain intact even after a substantial part of V atoms have been replaced in the $\mathbf{V_{1-x}Ti_xAl_3}$ solid solutions. This Dirac semimetal state ends at $x=0.35$ where a Lifshitz transition to $p$-type trivial metal occurs. The V-Al bond is completely broken in this transition as long as the bonding orbitals are fully depopulated by the holes donated from Ti substitution. In other words, the Dirac electrons in $\mathbf{VAl_3}$ are protected by the V-Al bond whose molecular orbital is their bonding gravity center. Our understanding on the interrelations among electron count, chemical bond and electronic properties in topological semimetals suggests a rational approach to search robust, chemical-bond-protected topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Canted Spin Texture and Quantum Spin Hall Effect in WTe2

We report an unconventional quantum spin Hall phase in the monolayer T$_\text{d}$-WTe$_2$, which exhibits hitherto unknown features in other topological materials. The low-symmetry of the structure induces a canted spin texture in the $yz$ plane, which dictates the spin polarization of topologically protected boundary states. Additionally, the spin Hall conductivity gets quantized ($2e^2/h$) with a spin quantization axis parallel to the canting direction. These findings are based on large-scale quantum simulations of the spin Hall conductivity tensor and nonlocal resistances in multi-probe geometries using a realistic tight-binding model elaborated from first-principle methods. The observation of this canted quantum spin Hall effect, related to the formation of topological edge states with nontrivial spin polarization, demands for specific experimental design and suggests interesting alternatives for manipulating spin information in topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-orbit torque magnetization switching in MoTe2/permalloy heterostructures

The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based switching requires harnessing both new materials and novel physics to obtain high charge-to-spin conversion efficiencies, thus making the choice of spin source crucial. Here we report the observation of spin-orbit torque switching in bilayers consisting of a semimetallic film of 1T'-MoTe2 adjacent to permalloy. Deterministic switching is achieved without external magnetic fields at room temperature, and the switching occurs with currents one order of magnitude smaller than those typical in devices using the best-performing heavy metals. The thickness dependence can be understood if the interfacial spin-orbit contribution is considered in addition to the bulk spin Hall effect. Further threefold reduction in the switching current is demonstrated with resort to dumbbell-shaped magnetic elements. These findings foretell exciting prospects of using MoTe2 for low-power semimetal material based spin devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Optical detection and manipulation of spontaneous gyrotropic electronic order in a transition-metal dichalcogenide semimetal

The observation of chirality is ubiquitous in nature. Contrary to intuition, the population of opposite chiralities is surprisingly asymmetric at fundamental levels. Examples range from parity violation in the subatomic weak force to the homochirality in essential biomolecules. The ability to achieve chirality-selective synthesis (chiral induction) is of great importance in stereochemistry, molecular biology and pharmacology. In condensed matter physics, a crystalline electronic system is geometrically chiral when it lacks any mirror plane, space inversion center or roto-inversion axis. Typically, the geometrical chirality is predefined by a material's chiral lattice structure, which is fixed upon the formation of the crystal. By contrast, a particularly unconventional scenario is the gyrotropic order, where chirality spontaneously emerges across a phase transition as the electron system breaks the relevant symmetries of an originally achiral lattice. Such a gyrotropic order, proposed as the quantum analogue of the cholesteric liquid crystals, has attracted significant interest. However, to date, a clear observation and manipulation of the gyrotropic order remain challenging. We report the realization of optical chiral induction and the observation of a gyrotropically ordered phase in the transition-metal dichalcogenide semimetal $1T$-TiSe$_2$. We show that shining mid-infrared circularly polarized light near the critical temperature leads to the preferential formation of one chiral domain. As a result, we are able to observe an out-of-plane circular photogalvanic current, whose direction depends on the optical induction. Our study provides compelling evidence for the spontaneous emergence of chirality in the correlated semimetal TiSe$_2$. Such chiral induction provides a new way of optical control over novel orders in quantum materials.

0 citations0 reviewsNo code linkedOpen access