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Xiao-Ping Li

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3works
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4close collaborators

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3 publications

preprint2026arXiv

Manipulating Anomalous Transport via Crystal Symmetry in 2D Altermagnets

Anomalous transports, including the anomalous Hall effect (AHE) and anomalous Nernst effect (ANE), are typical manifestations of time-reversal-symmetry-breaking responses in materials. In general, the two Hall states with opposite Hall conductivities can be regarded as time-reversal pairs coupled to magnetic order, and switching between them relies on reversing the magnetization via an external magnetic field or electric current. Here, we introduce a approach for manipulating anomalous transport through crystal symmetry engineering in two-dimensional (2D) altermagnetic systems. Based on symmetry analysis, we demonstrate that 2D altermagnets (AM) with out-of-plane Néel vectors will not host any anomalous Hall transport. Remarkably, breaking the symmetry connecting the two magnetic sublattices, an anomalous Hall response can emerge immediately, and the signs of the anomalous Hall and anomalous Nernst conductivities can be flexibly controlled by the symmetry-breaking term, thereby realizing tunable sign-reversible anomalous transport. Furthermore, the feasibility of the theoretical scheme is further verified by explicit lattice-model construction. Using first-principles calculations, we investigate the realization of crystal symmetry-controlled anomalous transport in a 2D AM material Cr2_{2}O2_{2}. The results indicate that Cr2_{2}O2_{2} with out-of-plane Néel vectors can sequentially exhibit the AHE and quantum anomalous Hall effect (QAHE) under continuous uniaxial strain. Interestingly, the sign reversal between these two effects can be achieved by simply rotating the strain direction by C4z_{4z} symmetry. The corresponding ANE and its sign reversal are also revealed. Our findings provide a new strategy to manipulate anomalous transport, and should have significant potential applications.

preprint2022arXiv

Disorder- and Topology-Enhanced Fully Spin-Polarized Currents in Nodal Chain Spin-Gapless Semimetals

Recently discovered high-quality nodal chain spin-gapless semimetals MMF3_3 (MM = Pd, Mn) feature an ultra-clean nodal chain in the spin up channel residing right at the Fermi level and displaying a large spin gap leading to a 100\% spin-polarization of transport properties. Here, we investigate both intrinsic and extrinsic contributions to anomalous and spin transport in this class of materials. The dominant intrinsic origin is found to originate entirely from the gapped nodal chains without the entanglement of any other trivial bands. The side-jump mechanism is predicted to be negligibly small, but intrinsic skew-scattering enhances the intrinsic Hall and Nernst signals significantly, leading to large values of respective conductivities. Our findings open a new material platform for exploring strong anomalous and spin transport properties in magnetic topological semimetals.

preprint2021arXiv

From Atomic Semimetal to Topological Nontrivial Insulator

Topological band insulators and (semi-) metals can arise out of atomic insulators when the hopping strength between electrons increases. Such topological phases are separated from the atomic insulator by a bulk gap closing. In this work, we show that in many (magnetic) space groups, the crystals with certain Wyckoff positions and orbitals being occupied must be semimetal or metals in the atomic limit, e.g. the hopping strength between electrons is infinite weak but not vanishing, which then are termed atomic (semi-)metals (ASMs). We derive a sufficient condition for realizing ASMs in spinless and spinful systems. Remarkably, we find that increasing the hopping strength between electrons may transform an ASM into an insulator with both symmetries and electron fillings of crystal are preserved. The induced insulators inevitably are topologically non-trivial and at least are obstructed atomic insulators (OAIs) that are labeled as trivial insulator in topological quantum chemistry website. Particularly, using silicon as an example, we show ASM criterion can discover the OAIs missed by the recently proposed criterion of filling enforced OAI. Our work not only establishes an efficient way to identify and design non-trivial insulators but also predicts that the group-IV elemental semiconductors are ideal candidate materials for OAI.

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