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Chaoxi Cui

Chaoxi Cui contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

Manipulating Anomalous Transport via Crystal Symmetry in 2D Altermagnets

Anomalous transports, including the anomalous Hall effect (AHE) and anomalous Nernst effect (ANE), are typical manifestations of time-reversal-symmetry-breaking responses in materials. In general, the two Hall states with opposite Hall conductivities can be regarded as time-reversal pairs coupled to magnetic order, and switching between them relies on reversing the magnetization via an external magnetic field or electric current. Here, we introduce a approach for manipulating anomalous transport through crystal symmetry engineering in two-dimensional (2D) altermagnetic systems. Based on symmetry analysis, we demonstrate that 2D altermagnets (AM) with out-of-plane Néel vectors will not host any anomalous Hall transport. Remarkably, breaking the symmetry connecting the two magnetic sublattices, an anomalous Hall response can emerge immediately, and the signs of the anomalous Hall and anomalous Nernst conductivities can be flexibly controlled by the symmetry-breaking term, thereby realizing tunable sign-reversible anomalous transport. Furthermore, the feasibility of the theoretical scheme is further verified by explicit lattice-model construction. Using first-principles calculations, we investigate the realization of crystal symmetry-controlled anomalous transport in a 2D AM material Cr$_{2}$O$_{2}$. The results indicate that Cr$_{2}$O$_{2}$ with out-of-plane Néel vectors can sequentially exhibit the AHE and quantum anomalous Hall effect (QAHE) under continuous uniaxial strain. Interestingly, the sign reversal between these two effects can be achieved by simply rotating the strain direction by C$_{4z}$ symmetry. The corresponding ANE and its sign reversal are also revealed. Our findings provide a new strategy to manipulate anomalous transport, and should have significant potential applications.

preprint2022arXiv

Inventory of high-quality flat-band van der Waals materials

More is left to do in the field of flat bands besides proposing theoretical models. One unexplored area is the flat bands featured in the van der Waals (vdW) materials. Exploring more flat-band material candidates and moving the promising materials toward applications have been well recognized as the cornerstones for the next-generation high-efficiency devices. Here, we utilize a powerful high-throughput tool to screen desired vdW materials based on the Inorganic Crystal Structure Database. Through layers of filtration, we obtained 861 potential monolayers from 4997 vdW materials. Significantly, it is the first example to introduce flat-band electronic properties in the vdW materials and propose three families of representative flat-band materials by mapping two-dimensional (2D) flat-band lattice models. Unlike existing screening schemes, a simple, universal rule, i.e., 2D flat-band score criterion, is first proposed to efficiently identify 229 high-quality flat-band candidates, and guidance is provided to diagnose the quality of 2D flat bands. All these efforts to screen experimental available flat-band candidates will certainly motivate continuing exploration towards the realization of this class of special materials and their applications in material science.

preprint2020arXiv

Experimental evidence of monolayer AlB$_2$ with symmetry-protected Dirac cones

Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several Dirac cones along the $Γ$--M and $Γ$--K directions; these Dirac cones are protected by crystal symmetries and are thus resistant to external perturbations. The extraordinary electronic structure of the monolayer AlB$_2$ was confirmed via angle-resolved photoemission spectroscopy measurements. These results are likely to stimulate further research interest to explore the exotic properties arising from the interplay of Dirac fermions and superconductivity in two-dimensional materials.

preprint2020arXiv

Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2

We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase.