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Xiao Meng

Xiao Meng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.opticscond-mat.mtrl-scicond-mat.mes-halleess.SPphysics.ins-det

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Published work

5 published item(s)

preprint2022arXiv

Vehicular Connectivity on Complex Trajectories: Roadway-Geometry Aware ISAC Beam-tracking

In this paper, we propose sensing-assisted beamforming designs for vehicles on arbitrarily shaped roads by relying on integrated sensing and communication (ISAC) signalling.Specifically, we aim to address the limitations of conventional ISAC beam-tracking schemes that do not apply to complex road geometries. To improve the tracking accuracy and communication quality of service (QoS) in vehicle to infrastructure (V2I) networks, it is essential to model the complicated roadway geometry. To that end, we impose the curvilinear coordinate system (CCS) in an interacting multiple model extended Kalman filter (IMM-EKF) framework. By doing so, both the position and the motion of the vehicle on a complicated road can be explicitly modeled and precisely tracked attributing to the benefits from the CCS. Furthermore, an optimization problem is formulated to maximize the array gain through dynamically adjusting the array size and thereby controlling the beamwidth, which takes the performance loss caused by beam misalignment into account.Numerical simulations demonstrate that the roadway geometry-aware ISAC beamforming approach outperforms the communication-only based and ISAC kinematic-only based technique in the tracking performance. Moreover, the effectiveness of the dynamic beamwidth design is also verified by our numerical results.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sapphire substrate by decreasing the growth temperature of high-temperature-GaN to around 950 oC, which leads to the 3-dimensional growth of GaN. The so-called "WM" well describes the shape that the bottom of GaN V-pit is just right over the top of sapphire cone, and the regular arrangement of V-pits follows the patterns of sapphire substrate strictly. Two types of semipolar facets (1101) and (1122) expose on sidewalls of V-pits. Furthermore, by raising the growth temperature to 1000 oC, the growth mode of GaN can be transferred to 2-demonsional growth. Accordingly, the size of V-pits becomes smaller and the area of c-plane GaN becomes larger, while the total thickness of GaN keeps almost unchanged during this process. As long as the 2-demonsional growth lasts, the V-pits will disappear and only flat c-plane GaN remains. This means the area ratio of c-plane and semipolar plane GaN can be controlled by the duration time of 2-demonsional growth.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure

Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. The complexity of system seriously restricts the application. Here, we demonstrate an avalanche photodiode holding high gain without breakdown, which means no quenching circuit is needed for sustainable detection. The device is based on a GaN/AlN periodically-stacked-structure (PSS), wherein electron holds much higher efficiency than hole to draw energy from the electric field, and avalanche happens uni-directionally with high efficiency. and a recorded high gain (10^4) tested under constant bias is obtained in a prototype device, wherein the stable gain can be determined by the periodicity of the GaN/AlN PSS. This work not only brings a new light into avalanche multiplication mechanism, but also paves a technological path with high commercial value to realize highly sensitive avalanche devices working under constant bias like PMT.

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preprint2016arXiv

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of V-pits. In this paper, regularly arranged V-pits are formed on c-plane GaN grown by metal organic vapor phase epitaxy on conventional c-plane cone-patterned sapphire substrates. The size of V-pits and area of flat GaN can be adjusted by changing growth temperature. Five pairs of InGaN/GaN multi-quantumwell and also a light-emitting diode structure are grown on this V-pit-shaped GaN. Two peaks around 410 nm and 450 nm appearing in both photoluminescence and cathodeluminescence spectra are from the semipolar InGaN/GaN multi-quantum-well on sidewalls of V-pits and cplane InGaN/GaN multi-quantum-well, respectively. In addition, dense bright spots can be observed on the surface of light-emitting diode when it works under small injection current, which are believed owing to the enhanced hole injection around V-pits.

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preprint2016arXiv

Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements

Efficiency droop effect under high injection in GaN-based light emitting diodes (LEDs) strongly depends on wavelength, which is still not well understood. In this paper, through differential carrier lifetime measurements on commercialized near-UV, blue, and green LEDs, their different efficiency droop behaviors are attributed to different carrier lifetimes, which are prolonged as wavelength increases. This relationship between carrier lifetime and indium composition of InGaN quantum well is believed owing to the polarization-induced quantum confinement Stark effect. Long carrier lifetime not only increases the probability of carrier leakage, but also results in high carrier concentration in quantum well. In other words, under the same current density, the carrier concentration in active region in near-UV LED is the lowest while that in green one is the highest. If considering the efficiency droop depending on carrier concentration, the behaviors of LEDs with different wavelengths do not show any abnormality. The reason why the efficiency droop becomes more serious under lower temperature can be also explained by this model as well. Based on this result, the possible solutions to conquer efficiency droop are discussed. It seems that decreasing the carrier lifetime is a fundamental approach to solve the problem.

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